Hongbin Liu, Guang Hao Low, Damian S. Steiger, Thomas Häner, Markus Reiher, Matthias Troyer
AbstractMolecular science is governed by the dynamics of electrons and atomic
nuclei, and by their interactions with electromagnetic fields. A faithful
physicochemical understanding of these processes is crucial for the design and
synthesis of chemicals and materials of value for our society and economy.
Although some problems in this field can be adequately addressed by classical
mechanics, many ... hiện toàn bộ
AbstractWe present a quantum algorithm for data classification based on the
nearest-neighbor learning algorithm. The classification algorithm is divided
into two steps: Firstly, data in the same class is divided into smaller groups
with sublabels assisting building boundaries between data with different labels.
Secondly we construct a quantum circuit for classification that contains multi
control ... hiện toàn bộ
AbstractGrowth and other dynamical processes in soft materials can create novel
types of mesoscopic defects including discontinuities for the second and higher
derivatives of the deformation, and terminating defects for these
discontinuities. These higher-order defects move “easily", and can thus confer a
great degree of flexibility to the material. We develop a general continuum
mechanical framew... hiện toàn bộ
Tero Mäkinen, Markus Ovaska, Lasse Laurson, Mikko J. Alava
AbstractIn the Portevin–Le Chatelier (PLC) effect sample plastic deformation
takes place via localized bands. We present a model to account for band dynamics
and the variability the bands exhibit. The approach is tuned to account for
strain hardening and the strain-rate dependence for the case of so-called type A
(propagating) bands. The main experimental features of the fluctuations are a
reducti... hiện toàn bộ
AbstractPlasticity modelling has long relied on phenomenological models based on
ad-hoc assumption of constitutive relations, which are then fitted to limited
data. Other work is based on the consideration of physical mechanisms which seek
to establish a physical foundation of the observed plastic deformation behavior
through identification of isolated defect processes (’mechanisms’) which are
obs... hiện toàn bộ
Thomas Hochrainer, Benedikt Weger, Satyapriya Gupta
AbstractSince crystal plasticity is the result of moving and interacting
dislocations, it seems self-evident that continuum plasticity should in
principle be derivable as a statistical continuum theory of dislocations, though
in practice we are still far from doing so. One key to any statistical continuum
theory of interacting particles is the consideration of spatial correlations.
However, becaus... hiện toàn bộ
Dmitry A. Fedorov, Bo Peng, Niranjan Govind, Yuri Alexeev
The variational quantum eigensolver (VQE) is a method that uses a hybrid
quantum-classical computational approach to find eigenvalues of a Hamiltonian.
VQE has been proposed as an alternative to fully quantum algorithms such as
quantum phase estimation (QPE) because fully quantum algorithms require quantum
hardware that will not be accessible in the near future. VQE has been
successfully applied t... hiện toàn bộ
Tohid Naseri, Daniel Larouche, Rémi Martinez, Francis Breton
An exact analytical solution of the Fick’s second law was developed and applied
to the mixed-mode growth of a multicomponent ellipsoidal precipitate growing
with constant eccentricities in the quasi-stationary regime. The solution is
exact if the nominal composition, equilibrium concentrations and material
properties are assumed constant, and can be applied to compounds having no
limitations in th... hiện toàn bộ
Nghiên cứu này được dành riêng cho việc xác định năng lượng bề mặt và ứng suất
của hạt nano và lỗ rỗng trong sự hiện diện của áp suất, và để đánh giá độ chính
xác của phương trình Young-Laplace cho các hệ thống này. Các quy trình được đề
xuất để trích xuất các đại lượng đó từ các tính toán tiềm năng liên nguyên tử cổ
điển, được thực hiện cho ba vật liệu khác nhau: nhôm, silicon và sắt. Các cuộc
đi... hiện toàn bộ
#ứng suất bề mặt #hạt nano #lỗ rỗng #nhôm #silicon #sắt #phương trình Young-Laplace #năng lượng bề mặt #áp suất
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