Materials Theory

  2509-8012

 

 

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Các bài báo tiêu biểu

Prospects of quantum computing for molecular sciences
Tập 6 Số 1
Hongbin Liu, Guang Hao Low, Damian S. Steiger, Thomas Häner, Markus Reiher, Matthias Troyer
AbstractMolecular science is governed by the dynamics of electrons and atomic nuclei, and by their interactions with electromagnetic fields. A faithful physicochemical understanding of these processes is crucial for the design and synthesis of chemicals and materials of value for our society and economy. Although some problems in this field can be adequately addressed by classical mechanics, many demand an explicit quantum mechanical description. Such quantum problems require a representation of wave functions that grows exponentially with system size and therefore should naturally benefit from quantum computation on a number of logical qubits that scales only linearly with system size. In this perspective, we elaborate on the potential benefits of quantum computing in the molecular sciences, i.e., in molecular physics, chemistry, biochemistry, and materials science.
Quantum cluster algorithm for data classification
Tập 5 Số 1
Junxu Li, Sabre Kais
AbstractWe present a quantum algorithm for data classification based on the nearest-neighbor learning algorithm. The classification algorithm is divided into two steps: Firstly, data in the same class is divided into smaller groups with sublabels assisting building boundaries between data with different labels. Secondly we construct a quantum circuit for classification that contains multi control gates. The algorithm is easy to implement and efficient in predicting the labels of test data. To illustrate the power and efficiency of this approach, we construct the phase transition diagram for the metal-insulator transition of VO2, using limited trained experimental data, where VO2 is a typical strongly correlated electron materials, and the metallic-insulating phase transition has drawn much attention in condensed matter physics. Moreover, we demonstrate our algorithm on the classification of randomly generated data and the classification of entanglement for various Werner states, where the training sets can not be divided by a single curve, instead, more than one curves are required to separate them apart perfectly. Our preliminary result shows considerable potential for various classification problems, particularly for constructing different phases in materials.
Mechanics of moving defects in growing sheets: 3-d, small deformation theory
Tập 4 Số 1 - 2020
Amit Acharya, Shankar C. Venkataramani
AbstractGrowth and other dynamical processes in soft materials can create novel types of mesoscopic defects including discontinuities for the second and higher derivatives of the deformation, and terminating defects for these discontinuities. These higher-order defects move “easily", and can thus confer a great degree of flexibility to the material. We develop a general continuum mechanical framework from which we can derive the dynamics of higher order defects in a thermodynamically consistent manner. We illustrate our framework by obtaining the explicit dynamical equations for the next higher order defects in an elastic body beyond dislocations, phase boundaries, and disclinations, namely, surfaces of inflection and branch lines.
Relating plasticity to dislocation properties by data analysis: scaling vs. machine learning approaches
Tập 7 Số 1
Stefan Hiemer, Haidong Fan, Michael Zaiser
AbstractPlasticity modelling has long relied on phenomenological models based on ad-hoc assumption of constitutive relations, which are then fitted to limited data. Other work is based on the consideration of physical mechanisms which seek to establish a physical foundation of the observed plastic deformation behavior through identification of isolated defect processes (’mechanisms’) which are observed either experimentally or in simulations and then serve to formulate so-called physically based models. Neither of these approaches is adequate to capture the complexity of plastic deformation which belongs into the realm of emergent collective phenomena, and to understand the complex interplay of multiple deformation pathways which is at the core of modern high performance structural materials. Data based approaches offer alternative pathways towards plasticity modelling whose strengths and limitations we explore here for a simple example, namely the interplay between rate and dislocation density dependent strengthening mechanisms in fcc metals.
Portevin–Le Chatelier effect: modeling the deformation bands and stress-strain curves
Tero Mäkinen, Markus Ovaska, Lasse Laurson, Mikko J. Alava
AbstractIn the Portevin–Le Chatelier (PLC) effect sample plastic deformation takes place via localized bands. We present a model to account for band dynamics and the variability the bands exhibit. The approach is tuned to account for strain hardening and the strain-rate dependence for the case of so-called type A (propagating) bands. The main experimental features of the fluctuations are a reduction with strain and increase with the strain rate which is reproduced by a model of plastic deformation with Dynamic Strain Aging, including disorder as a key parameter. Extensions are discussed as are the short-comings in reproducing detailed avalanche statistics.
Making sense of dislocation correlations
- 2022
Thomas Hochrainer, Benedikt Weger, Satyapriya Gupta
AbstractSince crystal plasticity is the result of moving and interacting dislocations, it seems self-evident that continuum plasticity should in principle be derivable as a statistical continuum theory of dislocations, though in practice we are still far from doing so. One key to any statistical continuum theory of interacting particles is the consideration of spatial correlations. However, because dislocations are extended one-dimensional defects, the classical definition of correlations for point particles is not readily applicable to dislocation systems: the line-like nature of dislocations entails that a scalar pair correlation function does not suffice for characterizing spatial correlations and a hierarchy of two-point tensors is required in general. The extended nature of dislocations as closed curves leads to strong self-correlations along the dislocation line. In the current contribution, we thoroughly introduce the concept of pair correlations for general averaged dislocation systems and illustrate self-correlations as well as the content of low order correlation tensors using a simple model system. We furthermore detail how pair correlation information may be obtained from three-dimensional discrete dislocation simulations and provide a first analysis of correlations from such simulations. We briefly discuss how the pair correlation information may be employed to improve existing continuum dislocation theories and why we think it is important for analyzing discrete dislocation data.
A Filon-like integration strategy for calculating exact exchange in periodic boundary conditions: a plane-wave DFT implementation
Tập 4 - Trang 1-31 - 2020
Eric J Bylaska, Kevin Waters, Eric D Hermes, Judit Zádor, Kevin M Rosso
An efficient and accurate approach for calculating exact exchange and other two-electron integrals has been developed for periodic electronic structure methods. Traditional approaches used for integrating over the Brillouin zone in band structure calculations, e.g. trapezoidal or Monkhorst-Pack, are not accurate enough for two-electron integrals. This is because their integrands contain multiple singularities over the double integration of the Brillouin zone, which with simple integration methods lead to very inaccurate results. A common approach to this problem has been to replace the Coulomb interaction with a screened Coulomb interaction that removes singularities from the integrands in the two-electron integrals, albeit at the inelegance of having to introduce a screening factor which must precomputed or guessed. Instead of introducing screened Coulomb interactions in an ad hoc way, the method developed in this work derives an effective screened potential using a Filon-like integration approach that is based only on the lattice parameters. This approach overcomes the limitations of traditionally defined screened Coulomb interactions for calculating two-electron integrals, and makes chemistry many-body calculations tractable in periodic boundary conditions. This method has been applied to several systems for which conventional DFT methods do not work well, including the reaction pathways for the addition of H2 to phenol and Au$_{20}^{-}$ nanoparticle, and the electron transfer of a charge trapped state in the Fe(II) containing mica, annite.
Cell structure formation in a two-dimensional density-based dislocation dynamics model
Tập 5 - Trang 1-22 - 2021
Ronghai Wu, Michael Zaiser
Cellular patterns formed by self-organization of dislocations are a most conspicuous feature of dislocation microstructure evolution during plastic deformation. To elucidate the physical mechanisms underlying dislocation cell structure formation, we use a minimal model for the evolution of dislocation densities under load. By considering only two slip systems in a plane strain setting, we arrive at a model which is amenable to analytical stability analysis and numerical simulation. We use this model to establish analytical stability criteria for cell structures to emerge, to investigate the dynamics of the patterning process and establish the mechanism of pattern wavelength selection. This analysis demonstrates an intimate relationship between hardening and cell structure formation, which appears as an almost inevitable corollary to dislocation dominated strain hardening. Specific mechanisms such as cross slip, by contrast, turn out to be incidental to the formation of cellular patterns.
On the three-dimensional spatial correlations of curved dislocation systems
Tập 5 - Trang 1-34 - 2021
Joseph Pierre Anderson, Anter El-Azab
Coarse-grained descriptions of dislocation motion in crystalline metals inherently represent a loss of information regarding dislocation-dislocation interactions. In the present work, we consider a coarse-graining framework capable of re-capturing these interactions by means of the dislocation-dislocation correlation functions. The framework depends on a convolution length to define slip-system-specific dislocation densities. Following a statistical definition of this coarse-graining process, we define a spatial correlation function which will allow the arrangement of the discrete line system at two points—and thus the strength of their interactions at short range—to be recaptured into a mean field description of dislocation dynamics. Through a statistical homogeneity argument, we present a method of evaluating this correlation function from discrete dislocation dynamics simulations. Finally, results of this evaluation are shown in the form of the correlation of dislocation densities on the same slip-system. These correlation functions are seen to depend weakly on plastic strain, and in turn, the dislocation density, but are seen to depend strongly on the convolution length. Implications of these correlation functions in regard to continuum dislocation dynamics as well as future directions of investigation are also discussed.
Thermodynamic considerations of same-metal electrodes in an asymmetric cell
Tập 3 - Trang 1-15 - 2019
M. H. Braga, N. S. Grundish, A. J. Murchison, J. B. Goodenough
An electrochemical cell contains three open thermodynamic systems that, in dynamic equilibrium, equalize their electrochemical potentials with that of their surrounding by forming an electric-double-layer-capacitor at the interface of the electrolyte with each of the two electrodes. Since the electrode/electrolyte interfaces are heterojunctions, the electrochemical potentials or Fermi levels of the two materials that contact the electrolyte at the two electrodes determine the voltage of a cell. The voltage is the sum of the voltages of the two interfacial electric-double-layer capacitors at the two electrode/electrolyte interfaces. A theoretical analysis of the thermodynamics that gives a quantitative prediction of the observed voltages in an asymmetric cell with an S8 relay at the positive electrode is provided. In addition, new discharge data and an X-ray photoelectron spectroscopy analysis of the lithium plated on the positive electrode of a discharged cell is presented. Ab initio, DFT methods were used to calculate the band structure and surface-state energies of the crystalline S8 solid sulfur relay. The theoretical exposition of the thermodynamics of the operative driving force of the chemical reactions in an electrochemical cell demonstrate that our initial experimental data and conclusions are valid. Other reported observations of lithium plating on the positive electrode, observations that were neither exploited nor their origins specified, are also cited.