Materials Theory
2509-8012
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AbstractMolecular science is governed by the dynamics of electrons and atomic
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Quantum cluster algorithm for data classification
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Mechanics of moving defects in growing sheets: 3-d, small deformation theory
Tập 4 Số 1 - 2020
AbstractGrowth and other dynamical processes in soft materials can create novel
types of mesoscopic defects including discontinuities for the second and higher
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Portevin–Le Chatelier effect: modeling the deformation bands and stress-strain curves
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Relating plasticity to dislocation properties by data analysis: scaling vs. machine learning approaches
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AbstractPlasticity modelling has long relied on phenomenological models based on
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Making sense of dislocation correlations
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AbstractSince crystal plasticity is the result of moving and interacting
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Length scales and scale-free dynamics of dislocations in dense solid solutions
Tập 4 - Trang 1-25 - 2020
The fundamental interactions between an edge dislocation and a random solid
solution are studied by analyzing dislocation line roughness profiles obtained
from molecular dynamics simulations of Fe0.70Ni0.11Cr0.19 over a range of
stresses and temperatures. These roughness profiles reveal the hallmark features
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Theoretical framework for predicting solute concentrations and solute-induced stresses in finite volumes with arbitrary elastic fields
Tập 4 - Trang 1-22 - 2020
A theoretical model for computing the interstitial solute concentration and the
interstitial solute-induced stress field in a three-dimensional finite medium
with any arbitrary elastic fields was developed. This model can be directly
incorporated into two-dimensional or three-dimensional discrete dislocation
dynamics simulations, continuum dislocation dynamics simulations, or crystal
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GD3: generalized discrete defect dynamics
Tập 3 - Trang 1-21 - 2019
A mesoscale model is introduced to study the dynamics of material defects lying
at interface junctions. The proposed framework couples the dynamics of discrete
dislocation and disclination lines. Disclinations are expected to be natural
defects at interface junctions; their presence serving the purpose of
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