Journal of Crystal Growth

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Study of silicon incorporation from SiH4 in GaAs layers grown by metalorganic vapor phase epitaxy using tertiarybutylarsine
Journal of Crystal Growth - Tập 145 Số 1-4 - Trang 397-402 - 1994
X-ray topographic study of defects in KH2PO4 single crystals and their relation with impurity segregation
Journal of Crystal Growth - Tập 23 - Trang 243-252 - 1974
C. Belouet
A least square method to determine a theoretical rate of growth versus relative supersaturation curve from accurate data
Journal of Crystal Growth - Tập 1 - Trang 232-237 - 1967
P. Bennema, H.B. Klein Haneveld
Effects of the thickness of GaAs spacer layers on the structure of multilayer stacked InAs quantum dots
Journal of Crystal Growth - Tập 311 - Trang 258-262 - 2009
Hyung Seok Kim, Ju Hyung Suh, Chan Gyung Park, Sang Jun Lee, Sam Kyu Noh, Jin Dong Song, Yong Ju Park, Won Jun Choi, Jung Il Lee
Wave dynamics on directional solidification interfaces swept by a flow in a thin sample
Journal of Crystal Growth - Tập 417 - Trang 37-43 - 2015
Tania Jiang, Marc Georgelin, Alain Pocheau
Epitaxial growth of europium on (110)Nb and (0001)Y
Journal of Crystal Growth - Tập 265 - Trang 582-591 - 2004
S. Soriano, K. Dumesnil, C. Dufour, D. Pierre
Raman studies of longitudinal optical phonon–plasmon coupling in GaN layers
Journal of Crystal Growth - Tập 189 - Trang 661-665 - 1998
N Wieser, M Klose, R Dassow, F Scholz, J Off
The cellular growth of Bi-Pb2Bi eutectic
Journal of Crystal Growth - Tập 11 - Trang 121-130 - 1971
M.N. Croker, R.S. Fidler, R.W. Smith
The growth of yeast thiolase crystals using a polyacrylamide gel as dialysis membrane
Journal of Crystal Growth - Tập 122 - Trang 194-198 - 1992
J.Ph. Zeelen, R.K. Wierenga
Tổng số: 18,338   
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