Journal of Crystal Growth

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Lateral and longitudinal patterning of semiconductor structures by crystal growth on nonplanar and dielectric-masked GaAs substrates: application to thickness-modulated waveguide structures
Journal of Crystal Growth - Tập 107 - Trang 226-230 - 1991
E. Colas, A. Shahar, B.D. Soole, W.J. Tomlinson, J.R. Hayes, C. Caneau, R. Bhat
Halide vapor phase epitaxy of ZnO studied by thermodynamic analysis and growth experiments
Journal of Crystal Growth - Tập 314 - Trang 108-112 - 2011
Tetsuo Fujii, Naoki Yoshii, Yoshinao Kumagai, Akinori Koukitu
High-quality CdTe growth in the (100)-orientation on (100)-GaAs substrates by molecular beam epitaxy
Journal of Crystal Growth - Tập 227 - Trang 671-676 - 2001
Kazuto Koike, Takashi Tanaka, Shuwei Li, Mitsuaki Yano
Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure
Journal of Crystal Growth - Tập 505 - Trang 59-61 - 2019
Hengyu Xu, Caiping Wan, Ling Sang, Jin-Ping Ao
Growth characteristics of Cu(In,Ga)Se2 thin films using 3-stage deposition process with a NaF precursor
Journal of Crystal Growth - Tập 319 - Trang 44-48 - 2011
R. Sakdanuphab, C. Chityuttakan, A. Pankiew, N. Somwang, K. Yoodee, S. Chatraphorn
Two-dimensional analysis on solute segregation in crystal growth from melt I. Solution at crystal/melt interface
Journal of Crystal Growth - Tập 158 - Trang 377-384 - 1996
Ran Zuo, Zengyuan Guo
The Czochralski growth of gallium antimonide single crystals under reducing conditions
Journal of Crystal Growth - Tập 58 - Trang 267-272 - 1982
B. Cockayne, V.W. Steward, G.T. Brown, W.R. MacEwan, M.L. Young
Structure, electrical and optical properties of N–In codoped ZnO thin films prepared by ion-beam enhanced deposition method
Journal of Crystal Growth - Tập 290 - Trang 156-160 - 2006
Ningyi Yuan, Jinhua Li, Lining Fan, Xiuqin Wang, Yi Zhou
Heteroepitaxial growth on microscale patterned silicon structures
Journal of Crystal Growth - Tập 280 - Trang 66-74 - 2005
G. Vanamu, A.K. Datye, Saleem H. Zaidi
A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy: vertical microchannel epitaxy
Journal of Crystal Growth - Tập 237 - Trang 1460-1465 - 2002
Y. Matsunaga, S. Naritsuka, T. Nishinaga
Tổng số: 18,337   
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