Journal of Crystal Growth

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Lateral and longitudinal patterning of semiconductor structures by crystal growth on nonplanar and dielectric-masked GaAs substrates: application to thickness-modulated waveguide structures
Journal of Crystal Growth - Tập 107 - Trang 226-230 - 1991
E. Colas, A. Shahar, B.D. Soole, W.J. Tomlinson, J.R. Hayes, C. Caneau, R. Bhat
High-quality CdTe growth in the (100)-orientation on (100)-GaAs substrates by molecular beam epitaxy
Journal of Crystal Growth - Tập 227 - Trang 671-676 - 2001
Kazuto Koike, Takashi Tanaka, Shuwei Li, Mitsuaki Yano
Halide vapor phase epitaxy of ZnO studied by thermodynamic analysis and growth experiments
Journal of Crystal Growth - Tập 314 - Trang 108-112 - 2011
Tetsuo Fujii, Naoki Yoshii, Yoshinao Kumagai, Akinori Koukitu
Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure
Journal of Crystal Growth - Tập 505 - Trang 59-61 - 2019
Hengyu Xu, Caiping Wan, Ling Sang, Jin-Ping Ao
Growth characteristics of Cu(In,Ga)Se2 thin films using 3-stage deposition process with a NaF precursor
Journal of Crystal Growth - Tập 319 - Trang 44-48 - 2011
R. Sakdanuphab, C. Chityuttakan, A. Pankiew, N. Somwang, K. Yoodee, S. Chatraphorn
Two-dimensional analysis on solute segregation in crystal growth from melt I. Solution at crystal/melt interface
Journal of Crystal Growth - Tập 158 - Trang 377-384 - 1996
Ran Zuo, Zengyuan Guo
The Czochralski growth of gallium antimonide single crystals under reducing conditions
Journal of Crystal Growth - Tập 58 - Trang 267-272 - 1982
B. Cockayne, V.W. Steward, G.T. Brown, W.R. MacEwan, M.L. Young
Heteroepitaxial growth on microscale patterned silicon structures
Journal of Crystal Growth - Tập 280 - Trang 66-74 - 2005
G. Vanamu, A.K. Datye, Saleem H. Zaidi
A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy: vertical microchannel epitaxy
Journal of Crystal Growth - Tập 237 - Trang 1460-1465 - 2002
Y. Matsunaga, S. Naritsuka, T. Nishinaga
Growth and characterization of KNbO3 by vertical Bridgman method
Journal of Crystal Growth - Tập 259 - Trang 296-301 - 2003
T. Takagi, T. Fujii, Y. Sakabe
Tổng số: 18,337   
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