Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure

Journal of Crystal Growth - Tập 505 - Trang 59-61 - 2019
Hengyu Xu1,2, Caiping Wan1, Ling Sang3, Jin-Ping Ao2
1Institute of Microelectronics, Chinese Academy of Sciences, No. 3 Beitucheng West Road, Chaoyang, Beijing 100029, China
2Graduate School of Engineering, Tokushima University, 2-1 Minamijyousanjima-cho, Tokushima 770-8506, Japan
3State Key Lab of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute Co. Ltd., No. 18 Riverside Avenue in the Future Science and Technology City, Changping, Beijing 102209, China

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Journal of Crystal Growth

Tập 505

59-61

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