A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy: vertical microchannel epitaxy
Tài liệu tham khảo
Okamoto, 1987, Jpn. J. Appl. Phys., 26, L1950, 10.1143/JJAP.26.L1950
Nishikawa, 1988, Jpn. J. Appl. Phys., 27, L159, 10.1143/JJAP.27.L159
Yamaguchi, 1990, J. Appl. Phys., 68, 4518, 10.1063/1.346156
Ujiie, 1989, Jpn. J. Appl. Phys., 28, L337, 10.1143/JJAP.28.L337
Sakawa, 1992, Jpn. J. Appl. Phys., 31, L359, 10.1143/JJAP.31.L359
Chang, 1998, J. Crystal Growth, 192, 18, 10.1016/S0022-0248(98)00407-2
Otsuka, 1986, J. Vac. Sci. Technol. B, 4, 896, 10.1116/1.583534
Tamura, 1991, J. Appl. Phys., 70, 4770, 10.1063/1.349069
Tachikawa, 1990, Appl. Phys. Lett., 56, 484, 10.1063/1.102773
Tachikawa, 1990, Appl. Phys. Lett., 56, 2225, 10.1063/1.102951
Y. Matsunaga, K. Toyoda, S. Naritsuka, T. Nishinaga, Proceeding of 192nd Electrochemical Society Meeting, Paris, France, August 31–September 5, 1997, p. 184.