A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy: vertical microchannel epitaxy

Journal of Crystal Growth - Tập 237 - Trang 1460-1465 - 2002
Y. Matsunaga, S. Naritsuka1,2, T. Nishinaga1,2
1Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
2Meijo University, 1-501 Shiogama-guchi Tenpaku-ku, Nagoya 468-8502, Japan

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