Growth characteristics of Cu(In,Ga)Se2 thin films using 3-stage deposition process with a NaF precursor

Journal of Crystal Growth - Tập 319 - Trang 44-48 - 2011
R. Sakdanuphab1,2, C. Chityuttakan1,2, A. Pankiew3, N. Somwang3, K. Yoodee1,2, S. Chatraphorn1,2
1Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok 10330, Thailand
2Research Center in Thin Film Physics, Thailand Center of Excellence in Physics, CHE, 328 Si Ayutthaya Road, Bangkok 10400, Thailand
3Thai Microelectronics Center, Suwintawong Road, Chachoengsao 24000, Thailand

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