IEEE Electron Device Letters
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Mô hình giữ điện tử cho điện tích cục bộ trong điện môi oxit-nitrua-oxit (ONO) Dịch bởi AI
IEEE Electron Device Letters - Tập 23 Số 9 - Trang 556-558 - 2002
Một mô hình giữ điện tử cho điện tích cục bộ, bị bẫy trong lớp điện môi ONO xếp chồng, được giới thiệu sử dụng thiết bị bộ nhớ chỉ đọc nitrua (NROM). Sự giảm ngưỡng điện áp (mất giữ) quan sát được của một ô đã được lập trình được giải thích theo việc phân phối lại điện tích theo phương ngang trong lớp nitrua. Giả sử cơ chế phát xạ nhiệt, các mức năng lượng của các bẫy điện tử đã được trích xuất và...... hiện toàn bộ
#Bẫy điện tử #Thiết bị điện môi #Đo lường tổn thất #Độ dẫn nhiệt #Trạng thái năng lượng #Phân bố nhiệt độ #Điện áp ngưỡng #Khoảng cách băng quang phổ #Mô hình dự đoán #Bộ nhớ bán dẫn
Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor
IEEE Electron Device Letters - Tập 23 Số 9 - Trang 508-510 - 2002
Self-aligned GaAs enhancement mode MOS heterostructure field-effect transistors (MOS-HFET) have been successfully fabricated for the first time. The MOS devices employ a Ga2O3 gate oxide, an undoped Al/sub 0.75/Ga/sub 0.25/As spacer layer, and undoped In/sub 0.2/Ga/sub 0.8/As as channel layer. The p-channel devices with a gate length of 0.6 μm exhibit a maximum DC transconductance g/sub m/ of 51 m...... hiện toàn bộ
#Gallium arsenide #HEMTs #MODFETs #MOSFETs #Epitaxial layers #MOS devices #Transconductance #Indium #Semiconductor device modeling #Heterojunctions
New insights in polarity-dependent oxide breakdown for ultrathin gate oxide
IEEE Electron Device Letters - Tập 23 Số 8 - Trang 494-496 - 2002
In this work, a quantitative analysis is applied to resolve the newly reported polarity-dependent charge-to-breakdown (Q/sub BD/) data from thick oxides of 6.8 nm down to ultrathin oxides of 1.9 nm. Three independent sets of Q/sub BD/ data, i.e., n/sup +/poly/NFET stressed under inversion and accumulation, and p/sup +/ poly/PFET under accumulation are carefully investigated. The Q/sub BD/ degradat...... hiện toàn bộ
#Electric breakdown #Stress #Breakdown voltage #Anodes #Electrons #Degradation #Dielectric substrates #Semiconductor device reliability #Tunneling #Dielectric devices
Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs
IEEE Electron Device Letters - Tập 23 Số 8 - Trang 449-451 - 2002
We demonstrate a novel RF switch based on a multifinger AlGaN/GaN MOSHFET. Record high saturation current and breakdown voltage, extremely low gate leakage current and low gate capacitance of the III-N MOSHFETs make them excellent active elements for RF switching. Using a single element test circuit with 1-mm wide multifinger MOSHFET we achieved 0.27 dB insertion loss and more than 40 dB isolation...... hiện toàn bộ
#Radio frequency #Aluminum gallium nitride #Gallium nitride #MOSHFETs #Switches #Circuit testing #Leakage current #Capacitance #Insertion loss #Impedance matching
An improved two-frequency method of capacitance measurement for SrTiO3 as high-k gate dielectric
IEEE Electron Device Letters - Tập 23 Số 9 - Trang 553-555 - 2002
An improved two-frequency method of capacitance measurement for the high-k gate dielectrics is proposed. The equivalent circuit model of the MOS capacitor including the four parameters of intrinsic capacitance, loss tangent, parasitic series inductance, and series resistance is developed. These parameters can be extracted by independently measuring the capacitor at two different frequencies. This ...... hiện toàn bộ
#Capacitance measurement #MOS capacitors #Parasitic capacitance #Inductance #Dielectric measurements #Electrical resistance measurement #Capacitance-voltage characteristics #Equivalent circuits #Frequency measurement #High K dielectric materials
A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon
IEEE Electron Device Letters - Tập 23 Số 8 - Trang 446-448 - 2002
A novel hexagonal binary-decision-diagram (BDD) quantum logic circuit approach for III-V quantum large scale integrated circuits is proposed and its basic feasibility is demonstrated. In this approach, a III-V hexagonal nanowire network is controlled by Schottky wrap gates (WPGs) to implement BDD logic architecture by path switching. A novel single electron BDD OR logic circuit is successfully fab...... hiện toàn bộ
#Electrons #Logic circuits #Binary decision diagrams #Gallium arsenide #Quantum computing #III-V semiconductor materials #Nanoscale devices #Logic functions #Registers #Large scale integration
A 4.2-ps ECL ring-oscillator in a 285-GHz fmax SiGe technology
IEEE Electron Device Letters - Tập 23 Số 9 - Trang 541-543 - 2002
This letter reports on the room temperature operation of a conventional SiGe bipolar ECL ring oscillator with a minimum stage delay of 4.2 ps for /spl sim/250 mV single ended voltage swing. To our knowledge, this is the lowest reported delay for a gate fabricated using transistor devices. The circuit uses 0.12 × 2 μm2 emitter size SiGe n-p-n transistors with a room temperature fT of 207 GHz and fm...... hiện toàn bộ
#Silicon germanium #Germanium silicon alloys #Ring oscillators #Circuits #Heterojunction bipolar transistors #Temperature #Delay effects #Costs #CMOS technology #Silicon on insulator technology
A high performance MIM capacitor using HfO2 dielectrics
IEEE Electron Device Letters - Tập 23 Số 9 - Trang 514-516 - 2002
Metal-insulator-metal (MIM) capacitors with a 56 nm thick HfO/sub 2/ high-/spl kappa/ dielectric film have been fabricated and demonstrated for the first of time with a low thermal budget (/spl sim/200/spl deg/C). Voltage linearity, temperature coefficients of capacitance, and electrical properties are all characterized. The results show that the HfO/sub 2/ MIM capacitor can provide a higher capac...... hiện toàn bộ
#MIM capacitors #Hafnium oxide #Capacitance #Voltage #Temperature #Metal-insulator structures #Dielectric films #Linearity #Leakage current #Silicon
Effects of localized contamination with copper in MOSFETs
IEEE Electron Device Letters - Tập 23 Số 8 - Trang 479-481 - 2002
Using a relatively large size MOSFET (W/L= 15/15 μm), we investigated the degradation of MOSFET characteristics due to localized copper contamination. In order to contaminate a part of the active region of MOSFET, silicon nitride (Si3N4) over the active region, which is known to be a protective film against copper, was etched by reactive ion etching (RIE). As the area of localized copper contamina...... hiện toàn bộ
#Contamination #Copper #MOSFETs #Etching #Silicon #Protection #Semiconductor films #Electrodes #Integrated circuit interconnections #Electromigration
Electrically programmable fuse (eFUSE) using electromigration in silicides
IEEE Electron Device Letters - Tập 23 Số 9 - Trang 523-525 - 2002
For the first time we describe a positive application of electromigration, as an electrically programmable fuse device (eFUSE). Upon programming, eFUSE's show a large increase in resistance that enable easy sensing. The transient device characteristics show that the eFUSE stays in a low resistance state during programming due to the local heating of the fuse link. The programming is enhanced by a ...... hiện toàn bộ
#Fuses #Electromigration #Silicides #Cathodes #CMOS technology #Electric resistance #Microelectronics #Integrated circuit interconnections #Contacts #Laser transitions
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