IEEE Electron Device Letters

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Single-carrier space-charge controlled conduction vs. ballistic transport in GaAs devices at 77° K
IEEE Electron Device Letters - Tập 2 Số 8 - Trang 205-207 - 1981
Pierre Schmidt, M. Octavio, Paul Esqueda
Microwave performance of diamond surface-channel FETs
IEEE Electron Device Letters - Tập 23 Số 8 - Trang 488-490 - 2002
A. Aleksov, A. Denisenko, U. Spitzberg, W. Ebert, E. Kohn
S-parameters measurements were carried out on diamond-based FET devices with a p-type channel induced by hydrogen surface termination extracting fT and fmax for devices with gate lengths ranging from 5 μm to 0.2 μm. For the 0.2 μm gate length FET fT=11.55 GHz and fmax (MAG)=33.3 GHz values were obtained. High fmax (MAG)/fT ratios of above 2.5 were obtained for all devices. Further downscaling may ...... hiện toàn bộ
#Microwave FETs #Surface treatment #Plasma temperature #Microwave devices #Length measurement #Plasma measurements #Insulation #Hydrogen #Scattering parameters #Chemical vapor deposition
Optimization of Conductance Change in Pr1–xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems
IEEE Electron Device Letters - Tập 36 Số 5 - Trang 457-459 - 2015
Junwoo Jang, Sangsu Park, Geoffrey W. Burr, Hyunsang Hwang, Yoon‐Ha Jeong
Improved Synaptic Behavior Under Identical Pulses Using AlO<italic>x</italic>/HfO2Bilayer RRAM Array for Neuromorphic Systems
IEEE Electron Device Letters - Tập 37 Số 8 - Trang 994-997 - 2016
Jiyong Woo, Kibong Moon, Jeonghwan Song, Sangheon Lee, Myounghun Kwak, Jaesung Park, Hyunsang Hwang
Electrically programmable fuse (eFUSE) using electromigration in silicides
IEEE Electron Device Letters - Tập 23 Số 9 - Trang 523-525 - 2002
C. Kothandaraman, S.K. Iyer, S.S. Iyer
For the first time we describe a positive application of electromigration, as an electrically programmable fuse device (eFUSE). Upon programming, eFUSE's show a large increase in resistance that enable easy sensing. The transient device characteristics show that the eFUSE stays in a low resistance state during programming due to the local heating of the fuse link. The programming is enhanced by a ...... hiện toàn bộ
#Fuses #Electromigration #Silicides #Cathodes #CMOS technology #Electric resistance #Microelectronics #Integrated circuit interconnections #Contacts #Laser transitions
A thermal activation view of low voltage impact ionization in MOSFETs
IEEE Electron Device Letters - Tập 23 Số 9 - Trang 550-552 - 2002
Pin Su, K. Goto, T. Sugii, Chenming Hu
The authors present a thermal activation perspective for direct assessment of the low voltage impact ionization in deep-submicrometer MOSFETs. A comparison of the experimentally determined activation energy and a simple theoretical model is used to demonstrate the underlying mechanism responsible for impact ionization at low drain bias. The study indicates that the main driving force of impact ion...... hiện toàn bộ
#Low voltage #Impact ionization #MOSFETs #Lattices #Hot carrier effects #Thermal force #Photonic band gap #Current measurement #Temperature measurement #Predictive models
VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices
IEEE Electron Device Letters - Tập 24 Số 2 - Trang 99-101 - 2003
B. Govoreanu, Pieter Blomme, M. Rosmeulen, J. Van Houdt, K. De Meyer
Low ballistic mobility in submicron HEMTs
IEEE Electron Device Letters - Tập 23 Số 9 - Trang 511-513 - 2002
M.S. Shur
Ballistic effects in short channel high electron mobility transistors (HEMTs) greatly reduce the field effect mobility compared to that in long gate structures. This reduction is related to a finite electron acceleration time in the channel under the device gate. As an example, the field effect mobility at room temperature in 0.15-μm gate AlGaAs/GaAs HEMTs cannot exceed 3000 cm2/V-s. These predict...... hiện toàn bộ
#HEMTs #MODFETs #Electron mobility #Gallium arsenide #Temperature #Acceleration #Impurities #Cryogenics #Two dimensional displays #Current measurement
A high performance MIM capacitor using HfO2 dielectrics
IEEE Electron Device Letters - Tập 23 Số 9 - Trang 514-516 - 2002
Hang Hu, Chunxiang Zhu, Y.F. Lu, M.F. Li, Byung Jin Cho, W.K. Choi
Metal-insulator-metal (MIM) capacitors with a 56 nm thick HfO/sub 2/ high-/spl kappa/ dielectric film have been fabricated and demonstrated for the first of time with a low thermal budget (/spl sim/200/spl deg/C). Voltage linearity, temperature coefficients of capacitance, and electrical properties are all characterized. The results show that the HfO/sub 2/ MIM capacitor can provide a higher capac...... hiện toàn bộ
#MIM capacitors #Hafnium oxide #Capacitance #Voltage #Temperature #Metal-insulator structures #Dielectric films #Linearity #Leakage current #Silicon
A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon
IEEE Electron Device Letters - Tập 23 Số 8 - Trang 446-448 - 2002
S. Kasai, H. Hasegawa
A novel hexagonal binary-decision-diagram (BDD) quantum logic circuit approach for III-V quantum large scale integrated circuits is proposed and its basic feasibility is demonstrated. In this approach, a III-V hexagonal nanowire network is controlled by Schottky wrap gates (WPGs) to implement BDD logic architecture by path switching. A novel single electron BDD OR logic circuit is successfully fab...... hiện toàn bộ
#Electrons #Logic circuits #Binary decision diagrams #Gallium arsenide #Quantum computing #III-V semiconductor materials #Nanoscale devices #Logic functions #Registers #Large scale integration
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