High Q multilayer spiral inductor on silicon chip for 5/spl sim/6 GHzIEEE Electron Device Letters - Tập 23 Số 8 - Trang 470-472 - 2002
Guo Lihui, Yu Mingbin, Chen Zhen, He Han, Zhang Yi
High Q-values of spiral inductors at frequency around 5/spl sim/6 GHz have been achieved with a multilayer spiral (MLS) structure on a high loss silicon substrate. Compared to a one-layer spiral (OLS) inductor, the Q-value of a 4-nH inductor has been improved by about 80% at 5.65 GHz. The impact of the structure on Q-value and resonant frequency has been analyzed, which shows that an optimal heigh...... hiện toàn bộ
#Nonhomogeneous media #Spirals #Inductors #Silicon #CMOS technology #Multilevel systems #Integrated circuit interconnections #Frequency #Copper #Wireless LAN
Microwave performance of diamond surface-channel FETsIEEE Electron Device Letters - Tập 23 Số 8 - Trang 488-490 - 2002
A. Aleksov, A. Denisenko, U. Spitzberg, W. Ebert, E. Kohn
S-parameters measurements were carried out on diamond-based FET devices with a p-type channel induced by hydrogen surface termination extracting fT and fmax for devices with gate lengths ranging from 5 μm to 0.2 μm. For the 0.2 μm gate length FET fT=11.55 GHz and fmax (MAG)=33.3 GHz values were obtained. High fmax (MAG)/fT ratios of above 2.5 were obtained for all devices. Further downscaling may ...... hiện toàn bộ
#Microwave FETs #Surface treatment #Plasma temperature #Microwave devices #Length measurement #Plasma measurements #Insulation #Hydrogen #Scattering parameters #Chemical vapor deposition