IEEE Electron Device Letters

Công bố khoa học tiêu biểu

* Dữ liệu chỉ mang tính chất tham khảo

Sắp xếp:  
Possible ballistic effects in GaAs current limiters
IEEE Electron Device Letters - Tập 1 Số 11 - Trang 234-235 - 1980
R. Zuleeg
Single-carrier space-charge controlled conduction vs. ballistic transport in GaAs devices at 77° K
IEEE Electron Device Letters - Tập 2 Số 8 - Trang 205-207 - 1981
Pierre Schmidt, M. Octavio, Paul Esqueda
High Q multilayer spiral inductor on silicon chip for 5/spl sim/6 GHz
IEEE Electron Device Letters - Tập 23 Số 8 - Trang 470-472 - 2002
Guo Lihui, Yu Mingbin, Chen Zhen, He Han, Zhang Yi
High Q-values of spiral inductors at frequency around 5/spl sim/6 GHz have been achieved with a multilayer spiral (MLS) structure on a high loss silicon substrate. Compared to a one-layer spiral (OLS) inductor, the Q-value of a 4-nH inductor has been improved by about 80% at 5.65 GHz. The impact of the structure on Q-value and resonant frequency has been analyzed, which shows that an optimal heigh...... hiện toàn bộ
#Nonhomogeneous media #Spirals #Inductors #Silicon #CMOS technology #Multilevel systems #Integrated circuit interconnections #Frequency #Copper #Wireless LAN
Microwave performance of diamond surface-channel FETs
IEEE Electron Device Letters - Tập 23 Số 8 - Trang 488-490 - 2002
A. Aleksov, A. Denisenko, U. Spitzberg, W. Ebert, E. Kohn
S-parameters measurements were carried out on diamond-based FET devices with a p-type channel induced by hydrogen surface termination extracting fT and fmax for devices with gate lengths ranging from 5 μm to 0.2 μm. For the 0.2 μm gate length FET fT=11.55 GHz and fmax (MAG)=33.3 GHz values were obtained. High fmax (MAG)/fT ratios of above 2.5 were obtained for all devices. Further downscaling may ...... hiện toàn bộ
#Microwave FETs #Surface treatment #Plasma temperature #Microwave devices #Length measurement #Plasma measurements #Insulation #Hydrogen #Scattering parameters #Chemical vapor deposition
Optimization of series resistance in sub-0.2 /spl mu/m SOI MOSFET's
IEEE Electron Device Letters - Tập 15 Số 9 - Trang 363-365 - 1994
L.T. Su, M. Sherony, Hang Hu, Jaewoo Chung, Dimitris Antoniadis
Characteristics of Gate-All-Around Junctionless Poly-Si TFTs With an Ultrathin Channel
IEEE Electron Device Letters - Tập 34 Số 7 - Trang 897-899 - 2013
Hung-Bin Chen, Chun-Yen Chang, Nan-Heng Lu, Jui-Sheng Wu, Ming-Hung Han, Ya-Chi Cheng, Yung‐Chun Wu
A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices
IEEE Electron Device Letters - Tập 2 Số 4 - Trang 103-105 - 1981
C. M. Hsieh, P. C. Murley, R. R. O’Brien
Optimization of Conductance Change in Pr1–xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems
IEEE Electron Device Letters - Tập 36 Số 5 - Trang 457-459 - 2015
Junwoo Jang, Sangsu Park, Geoffrey W. Burr, Hyunsang Hwang, Yoon‐Ha Jeong
Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications
IEEE Electron Device Letters - Tập 38 Số 9 - Trang 1220-1223 - 2017
Jiyong Woo, Andrea Padovani, Kibong Moon, Myounghun Kwak, Luca Larcher, Hyunsang Hwang
Improved Synaptic Behavior Under Identical Pulses Using AlO<italic>x</italic>/HfO2Bilayer RRAM Array for Neuromorphic Systems
IEEE Electron Device Letters - Tập 37 Số 8 - Trang 994-997 - 2016
Jiyong Woo, Kibong Moon, Jeonghwan Song, Sangheon Lee, Myounghun Kwak, Jaesung Park, Hyunsang Hwang
Tổng số: 109   
  • 1
  • 2
  • 3
  • 4
  • 5
  • 6
  • 10