Microwave performance of diamond surface-channel FETs
Tóm tắt
S-parameters measurements were carried out on diamond-based FET devices with a p-type channel induced by hydrogen surface termination extracting fT and fmax for devices with gate lengths ranging from 5 μm to 0.2 μm. For the 0.2 μm gate length FET fT=11.55 GHz and fmax (MAG)=33.3 GHz values were obtained. High fmax (MAG)/fT ratios of above 2.5 were obtained for all devices. Further downscaling may result in an fT above 20 GHz and in addition, an fmax (MAG) above 50 GHz.
Từ khóa
#Microwave FETs #Surface treatment #Plasma temperature #Microwave devices #Length measurement #Plasma measurements #Insulation #Hydrogen #Scattering parameters #Chemical vapor depositionTài liệu tham khảo
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