Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications

IEEE Electron Device Letters - Tập 38 Số 9 - Trang 1220-1223 - 2017
Jiyong Woo1, Andrea Padovani2, Kibong Moon1, Myounghun Kwak1, Luca Larcher3, Hyunsang Hwang1
1Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea
2MDLSoft Inc., Santa Clara, CA, USA
3Dipartimento di Scienze e Metodi dell’Ingegneria, Università degli studi di Modena e Reggio Emilia, Reggio Emilia, Italy

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