Advanced Electronic Materials

SCIE-ISI SCOPUS (2015-2023)

  2199-160X

  2199-160X

  Đức

Cơ quản chủ quản:  WILEY , Wiley-VCH Verlag

Lĩnh vực:
Electronic, Optical and Magnetic Materials

Các bài báo tiêu biểu

Effect of Synthesis on Quality, Electronic Properties and Environmental Stability of Individual Monolayer Ti3C2 MXene Flakes
Tập 2 Số 12 - 2016
Alexey Lipatov, Mohamed Alhabeb, Maria R. Lukatskaya, Alex Boson, Yury Gogotsi, Alexander Sinitskii
2D transition metal carbide Ti3C2Tx (T stands for surface termination), the most widely studied MXene, has shown outstanding electrochemical properties and promise for a number of bulk applications. However, electronic properties of individual MXene flakes, which are important for understanding the potential of these materials,...... hiện toàn bộ
Các Phương Pháp Hiệu Quả Cải Thiện Độ Dẫn Điện của PEDOT:PSS: Một Bài Tổng Quan Dịch bởi AI
Tập 1 Số 4 - 2015
Hui Shi, Congcong Liu, Qinglin Jiang, Jingkun Xu
Sự phát triển nhanh chóng của các công nghệ hữu cơ mới đã dẫn đến những ứng dụng quan trọng của thiết bị điện tử hữu cơ như đi-ốt phát sáng, pin năng lượng mặt trời và bóng bán dẫn hiệu ứng trường. Yêu cầu lớn hiện nay là chất dẫn điện có độ dẫn cao và tính trong suốt để có thể hoạt động như lớp chuyển tải điện tích hoặc kết nối điện trong các thiết bị hữu cơ. Poly(3,4-ethylenedioxythiophe...... hiện toàn bộ
#PEDOT:PSS #độ dẫn điện #màng dẫn điện hữu cơ #cải thiện tính năng dẫn điện #công nghệ hữu cơ #ứng dụng điện tử hữu cơ
PVDF‐Based Ferroelectric Polymers in Modern Flexible Electronics
Tập 3 Số 5 - 2017
Xin Chen, Han Xu, Qun‐Dong Shen
Ferroelectric polymers are the most promising electroactive materials with outstanding properties that can be integrated into a variety of flexible electronic devices. Their multifunctional capabilities, ability to bend and stretch, ease of processing, chemical stability, and the high biocompatibility of polyvinylidene fluoride (PVDF)‐based polymers make them attractive for applications in...... hiện toàn bộ
Asymmetric Flexible MXene‐Reduced Graphene Oxide Micro‐Supercapacitor
Tập 4 Số 1 - 2018
Cedric Couly, Mohamed Alhabeb, Katherine L. Van Aken, Narendra Kurra, Luisa Gomes, Adriana M. Navarro‐Suárez, Babak Anasori, Husam N. Alshareef, Chuanfang Zhang
AbstractCurrent microfabrication of micro‐supercapacitors often involves multistep processing and delicate lithography protocols. In this study, simple fabrication of an asymmetric MXene‐based micro‐supercapacitor that is flexible, binder‐free, and current‐collector‐free is reported. The interdigitated device architecture is fabricated using a custom‐made mask and ...... hiện toàn bộ
Dimensionality Dependent Plasticity in Halide Perovskite Artificial Synapses for Neuromorphic Computing
Tập 5 Số 9 - 2019
Sung‐Il Kim, Yeongjun Lee, Min‐Ho Park, Gyeong‐Tak Go, Young‐Hoon Kim, Wentao Xu, Hyeon‐Dong Lee, Hobeom Kim, Dae‐Gyo Seo, Wanhee Lee, Tae‐Woo Lee
AbstractThe hysteretic behavior of organic–inorganic halide perovskites (OHPs) are exploited for application in neuromorphic electronics. Artificial synapses with 2D and quasi‐2D perovskite are demonstrated that have a bulky organic cation (phenethylammonium (PEA)) to form structures of (PEA)2MAn<...... hiện toàn bộ
Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System
Tập 3 Số 10 - 2017
Claudia Richter, Tony Schenk, Min Hyuk Park, Franziska A. Tscharntke, Everett D. Grimley, James M. LeBeau, Chuanzhen Zhou, Chris M. Fancher, Jacob L. Jones, Thomas Mikolajick, Uwe Schroeder
AbstractSilicon doped hafnium oxide was the material used in the original report of ferroelectricity in hafnia in 2011. Since then, it has been subject of many further publications including the demonstration of the world's first ferroelectric field‐effect transistor in the state‐of‐the‐art 28 nm technology. Though many studies are conducted with a strong focus on ...... hiện toàn bộ
2D Tin Monoxide—An Unexplored p‐Type van der Waals Semiconductor: Material Characteristics and Field Effect Transistors
Tập 2 Số 4 - 2016
K.J. Saji, Kun Tian, Michael Snure, Ashutosh Tiwari
2D materials are considered promising candidates for developing next‐generation high‐performance energy efficient electronic, optoelectronic, and valley‐tronic devices. Though metal oxides are widely used in the fabrication of many advanced devices, very little work has been reported on their properties in 2D limit. This article reports the discovery of a new 2D materials system, 2D tin mo...... hiện toàn bộ
Thin PZT‐Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications
Tập 1 Số 6 - 2015
Mohamed T. Ghoneim, Mohammed A. Zidan, Mohammed Y. Alnassar, Amir N. Hanna, Jürgen Kosel, K. Saláma, Muhammad M. Hussain
A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)‐(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol‐gel...... hiện toàn bộ
Perovskite BiFeO3–BaTiO3 Ferroelectrics: Engineering Properties by Domain Evolution and Thermal Depolarization Modification
Tập 6 Số 5 - 2020
Ting Zheng, Jiagang Wu
AbstractBismuth ferrite (BFO)‐based ceramics with large electromechanical response are important in electronic device applications. To better understand their physical mechanisms, a new phase diagram established by temperature dependence of dielectric properties, temperature dependence of piezoelectric coefficient, and the evolution of their properties is proposed ...... hiện toàn bộ
High Luminance Fiber‐Based Polymer Light‐Emitting Devices by a Dip‐Coating Method
Tập 1 Số 9 - 2015
Seonil Kwon, Woohyun Kim, Hyun‐Cheol Kim, Seungyeop Choi, Byoung‐Cheul Park, Sin‐Hyeok Kang, Kyung Cheol Choi