Advanced Electronic Materials
SCIE-ISI SCOPUS (2015-2025)
2199-160X
2199-160X
Đức
Cơ quản chủ quản: WILEY , Wiley-VCH Verlag
Lĩnh vực:
Electronic, Optical and Magnetic Materials
Phân tích ảnh hưởng
Các bài báo tiêu biểu
Effect of Synthesis on Quality, Electronic Properties and Environmental Stability of Individual Monolayer Ti3C2 MXene Flakes
Tập 2 Số 12 - 2016
2D transition metal carbide Ti3C2Tx (T stands for surface termination), the most
widely studied MXene, has shown outstanding electrochemical properties and
promise for a number of bulk applications. However, electronic properties of
individual MXene flakes, which are important for understanding the potential of
these materials, remain largely unexplored. Herein, a modified synthetic method
is repo...
Các Phương Pháp Hiệu Quả Cải Thiện Độ Dẫn Điện của PEDOT:PSS: Một Bài Tổng Quan Dịch bởi AI
Tập 1 Số 4 - 2015
Sự phát triển nhanh chóng của các công nghệ hữu cơ mới đã dẫn đến những ứng dụng
quan trọng của thiết bị điện tử hữu cơ như đi-ốt phát sáng, pin năng lượng mặt
trời và bóng bán dẫn hiệu ứng trường. Yêu cầu lớn hiện nay là chất dẫn điện có
độ dẫn cao và tính trong suốt để có thể hoạt động như lớp chuyển tải điện tích
hoặc kết nối điện trong các thiết bị hữu cơ. Poly(3,4-ethylenedioxythiophene):
pol...
#PEDOT:PSS #độ dẫn điện #màng dẫn điện hữu cơ #cải thiện tính năng dẫn điện #công nghệ hữu cơ #ứng dụng điện tử hữu cơ
PVDF‐Based Ferroelectric Polymers in Modern Flexible Electronics
Tập 3 Số 5 - 2017
Ferroelectric polymers are the most promising electroactive materials with
outstanding properties that can be integrated into a variety of flexible
electronic devices. Their multifunctional capabilities, ability to bend and
stretch, ease of processing, chemical stability, and the high biocompatibility
of polyvinylidene fluoride (PVDF)‐based polymers make them attractive for
applications in flexibl...
Asymmetric Flexible MXene‐Reduced Graphene Oxide Micro‐Supercapacitor
Tập 4 Số 1 - 2018
AbstractCurrent microfabrication of micro‐supercapacitors often involves
multistep processing and delicate lithography protocols. In this study, simple
fabrication of an asymmetric MXene‐based micro‐supercapacitor that is flexible,
binder‐free, and current‐collector‐free is reported. The interdigitated device
architecture is fabricated using a custom‐made mask and a scalable spray coating
techniqu...
Metallic Nanoparticle Inks for 3D Printing of Electronics
Tập 5 Số 5 - 2019
AbstractThe three‐dimensional (3D) printed electronics additive manufacturing
industry sector has grown substantially in the past few years, and there is
increasing demand for different types of metallic nanoparticle inks in
electronics printing for various applications. Metallic nanoparticle inks are
commonly used for fabricating conductive tracks and patterns due to their
relatively high electri...
Dimensionality Dependent Plasticity in Halide Perovskite Artificial Synapses for Neuromorphic Computing
Tập 5 Số 9 - 2019
AbstractThe hysteretic behavior of organic–inorganic halide perovskites (OHPs)
are exploited for application in neuromorphic electronics. Artificial synapses
with 2D and quasi‐2D perovskite are demonstrated that have a bulky organic
cation (phenethylammonium (PEA)) to form structures of (PEA)2MAn‐1PbnBr3n+1. The
OHP films have morphological properties that depend on their structure
dimensionality ...
Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System
Tập 3 Số 10 - 2017
AbstractSilicon doped hafnium oxide was the material used in the original report
of ferroelectricity in hafnia in 2011. Since then, it has been subject of many
further publications including the demonstration of the world's first
ferroelectric field‐effect transistor in the state‐of‐the‐art 28 nm technology.
Though many studies are conducted with a strong focus on application in memory
devices, a ...
2D Tin Monoxide—An Unexplored p‐Type van der Waals Semiconductor: Material Characteristics and Field Effect Transistors
Tập 2 Số 4 - 2016
2D materials are considered promising candidates for developing next‐generation
high‐performance energy efficient electronic, optoelectronic, and valley‐tronic
devices. Though metal oxides are widely used in the fabrication of many advanced
devices, very little work has been reported on their properties in 2D limit.
This article reports the discovery of a new 2D materials system, 2D tin monoxide
(...
Thin PZT‐Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications
Tập 1 Số 6 - 2015
A flexible version of traditional thin lead zirconium titanate
((Pb1.1Zr0.48Ti0.52O3)‐(PZT)) based ferroelectric random access memory (FeRAM)
on silicon shows record performance in flexible arena. The thin PZT layer
requires lower operational voltages to achieve coercive electric fields, reduces
the sol‐gel coating cycles required (i.e., more cost‐effective), and,
fabrication wise, is more suitabl...
Perovskite BiFeO3–BaTiO3 Ferroelectrics: Engineering Properties by Domain Evolution and Thermal Depolarization Modification
Tập 6 Số 5 - 2020
AbstractBismuth ferrite (BFO)‐based ceramics with large electromechanical
response are important in electronic device applications. To better understand
their physical mechanisms, a new phase diagram established by temperature
dependence of dielectric properties, temperature dependence of piezoelectric
coefficient, and the evolution of their properties is proposed to explain the
contribution of pi...