Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System

Advanced Electronic Materials - Tập 3 Số 10 - 2017
Claudia Richter1, Tony Schenk1, Min Hyuk Park1, Franziska A. Tscharntke1, Everett D. Grimley2, James M. LeBeau2, Chuanzhen Zhou3, Chris M. Fancher2, Jacob L. Jones2, Thomas Mikolajick4,1, Uwe Schroeder1
1NaMLab gGmbH Nöthnitzer Straße 64 01187 Dresden Germany
2Department of Materials Science and Engineering North Carolina State University Raleigh NC 27695‐7907 USA
3Analytical Instrumentation Facility College of Engineering at North Carolina State University Raleigh NC 27696 USA
4Chair of Nanoelectronic Materials, TU Dresden, 01062 Dresden, Germany

Tóm tắt

AbstractSilicon doped hafnium oxide was the material used in the original report of ferroelectricity in hafnia in 2011. Since then, it has been subject of many further publications including the demonstration of the world's first ferroelectric field‐effect transistor in the state‐of‐the‐art 28 nm technology. Though many studies are conducted with a strong focus on application in memory devices, a comprehensive study on structural stability in these films remains to be seen. In this work, a film thickness of about 36 nm, instead of the 10 nm used in most previous studies, is utilized to carefully probe how the concentration range impacts the evolution of phases, the dopant distribution, the field cycling effects, and their interplay in the macroscopic ferroelectric response of the films. Si:HfO2 appears to be a rather fragile system: different phases seem close in energy and the system is thus rich in competing phenomena. Nonetheless, it offers ferroelectricity or field‐induced ferroelectricity for elevated annealing conditions up to 1000 °C. Similar to the measures taken for conventional ferroelectrics such as lead zirconate titanate, engineering efforts to guarantee stable interfaces and stoichiometry are mandatory to achieve stable performance in applications such as ferroelectric memories, supercapacitors, or energy harvesting devices.

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Advanced Electronic Materials

Tập 3 Số 10

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