Advanced Electronic Materials

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Investigation of Energy Levels and Crystal Structures of Cesium Lead Halides and Their Application in Full‐Color Light‐Emitting Diodes
Advanced Electronic Materials - Tập 3 Số 1 - 2017
Quyet Van Le, Min-Joon Park, Woonbae Sohn, Ho Won Jang, Soo Young Kim
Inorganic CsPbX3 perovskites with compositions including CsPbBrxCl3−x, CsPbBr3, and CsPbBrxI3−x are synthesized, and...... hiện toàn bộ
Dimensionality Dependent Plasticity in Halide Perovskite Artificial Synapses for Neuromorphic Computing
Advanced Electronic Materials - Tập 5 Số 9 - 2019
Sung‐Il Kim, Yeongjun Lee, Min‐Ho Park, Gyeong‐Tak Go, Young‐Hoon Kim, Wentao Xu, Hyeon‐Dong Lee, Hobeom Kim, Dae‐Gyo Seo, Wanhee Lee, Tae‐Woo Lee
AbstractThe hysteretic behavior of organic–inorganic halide perovskites (OHPs) are exploited for application in neuromorphic electronics. Artificial synapses with 2D and quasi‐2D perovskite are demonstrated that have a bulky organic cation (phenethylammonium (PEA)) to form structures of (PEA)2MAn<...... hiện toàn bộ
2D Tin Monoxide—An Unexplored p‐Type van der Waals Semiconductor: Material Characteristics and Field Effect Transistors
Advanced Electronic Materials - Tập 2 Số 4 - 2016
K.J. Saji, Kun Tian, Michael Snure, Ashutosh Tiwari
2D materials are considered promising candidates for developing next‐generation high‐performance energy efficient electronic, optoelectronic, and valley‐tronic devices. Though metal oxides are widely used in the fabrication of many advanced devices, very little work has been reported on their properties in 2D limit. This article reports the discovery of a new 2D materials system, 2D tin mo...... hiện toàn bộ
Threshold Voltage Modulation of a Graphene–ZnO Barristor Using a Polymer Doping Process
Advanced Electronic Materials - Tập 5 Số 7 - 2019
Soyoung Kim, Jeongwoon Hwang, Yun Ji Kim, Hyeon Jun Hwang, Myungwoo Son, Revannath Dnyandeo Nikam, Moon‐Ho Ham, Kyeongjae Cho, Byoung Hun Lee
AbstractA method to modulate the threshold voltage of a graphene–ZnO barristor is investigated. Two types of polymers, polyethyleneimine (as an n‐type dopant) and poly (acrylic acid) (as a p‐type dopant), are used to pre‐set the initial Fermi level of the graphene. The threshold voltage of the graphene barristor can be modulated between −2.0 V (n‐type graphene) and...... hiện toàn bộ
Hybrid van der Waals SnO/MoS2 Heterojunctions for Thermal and Optical Sensing Applications
Advanced Electronic Materials - Tập 3 Số 12 - 2017
Zhenwei Wang, Xin He, Xixiang Zhang, Husam N. Alshareef
AbstractEmerging van der Waals heterojunctions (vdWH) containing 2D materials have shown exciting functionalities that surpass those of traditional devices based on bulk materials. In this Communication, a report on the properties of a 2D sulfide/oxide hybrid vdWH based on n‐type molybdenum disulfide (MoS2) and p‐type tin monoxide (SnO) is pres...... hiện toàn bộ
VO2‐Based Reconfigurable Antenna Platform with Addressable Microheater Matrix
Advanced Electronic Materials - Tập 3 Số 9 - 2017
Burak Gerislioglu, Arash Ahmadivand, Mustafa Karabiyik, Raju Sinha, Nezih Pala
This study reports on a reconfigurable antenna platform based on vanadium dioxide (VO2), a phase‐change material (PCM) with low transition temperature, integrated with an addressable microheater matrix. For the first time, it is shown that an entire planar antenna can be thermally reconfigured virtually to any pattern by switching the phase of the selected regions of t...... hiện toàn bộ
High‐Performance Coplanar Dual‐Channel a‐InGaZnO/a‐InZnO Semiconductor Thin‐Film Transistors with High Field‐Effect Mobility
Advanced Electronic Materials - Tập 7 Số 3 - 2021
Mohammad Masum Billah, Abu Bakar Siddik, Jung Bae Kim, Dong Kil Yim, Soo Young Choi, Jian Liu, Daniel Severín, Markus Hanika, Marcus Bender, Jin Jang
AbstractAn amorphous indium gallium zinc oxide (a‐IGZO) layer is deposited on very thin conductive amorphous indium zinc oxide (a‐IZO) thin film to demonstrate high‐performance, coplanar thin‐film transistors (TFTs) with dual‐channel oxide semiconductor architecture. Based on material properties, a conduction band offset (∆EC... hiện toàn bộ
Quantum Confinement and Thickness‐Dependent Electron Transport in Solution‐Processed In2O3 Transistors
Advanced Electronic Materials - Tập 6 Số 11 - 2020
Ivan Isakov, Hendrik Faber, Alexander D. Mottram, Satyajit Das, Max Grell, Anna Regoutz, Rebecca Kilmurray, Martyn A. McLachlan, David J. Payne, Thomas D. Anthopoulos
AbstractThe dependence of charge carrier mobility on semiconductor channel thickness in field‐effect transistors is a universal phenomenon that has been studied extensively for various families of materials. Surprisingly, analogous studies involving metal oxide semiconductors are relatively scarce. Here, spray‐deposited In2O3... hiện toàn bộ
Cross‐Bar SnO2‐NiO Nanofiber‐Array‐Based Transparent Photodetectors with High Detectivity
Advanced Electronic Materials - Tập 6 Số 1 - 2020
Zhenghao Long, Xiaojie Xu, Wei Yang, Mingxiang Hu, Dmitry V. Shtansky, Dmitri Golberg, Xiaosheng Fang
AbstractAn cross‐bar structure is employed to design a transparent p‐n junction‐based photodetector. The device consisting of aligned n‐SnO2 and p‐NiO nanofibers is prepared via a mature electrospinning process that is suitable for commer...... hiện toàn bộ
Các Phương Pháp Hiệu Quả Cải Thiện Độ Dẫn Điện của PEDOT:PSS: Một Bài Tổng Quan Dịch bởi AI
Advanced Electronic Materials - Tập 1 Số 4 - 2015
Hui Shi, Congcong Liu, Qinglin Jiang, Jingkun Xu
Sự phát triển nhanh chóng của các công nghệ hữu cơ mới đã dẫn đến những ứng dụng quan trọng của thiết bị điện tử hữu cơ như đi-ốt phát sáng, pin năng lượng mặt trời và bóng bán dẫn hiệu ứng trường. Yêu cầu lớn hiện nay là chất dẫn điện có độ dẫn cao và tính trong suốt để có thể hoạt động như lớp chuyển tải điện tích hoặc kết nối điện trong các thiết bị hữu cơ. Poly(3,4-ethylenedioxythiophe...... hiện toàn bộ
#PEDOT:PSS #độ dẫn điện #màng dẫn điện hữu cơ #cải thiện tính năng dẫn điện #công nghệ hữu cơ #ứng dụng điện tử hữu cơ
Tổng số: 36   
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