Advanced Electronic Materials

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Solvent Engineering for High‐Performance n‐Type Organic Electrochemical Transistors
Advanced Electronic Materials - Tập 5 Số 8 - 2019
Achilleas Savva, David Ohayon, Jokūbas Surgailis, Alexandra F. Paterson, Tania C. Hidalgo, Xingxing Chen, Iuliana P. Maria, Bryan D. Paulsen, Anthony J. Petty, Jonathan Rivnay, Iain McCulloch, Sahika Inal
AbstractOrganic electrochemical transistors (OECTs) exhibit strong potential for various applications in bioelectronics, especially as miniaturized, point‐of‐care biosensors, because of their efficient transducing ability. To date, however, the majority of reported OECTs have relied on p‐type (hole transporting) polymer mixed conductors, due to the limited number o...... hiện toàn bộ
Electrochemical Performance of Manganese Coordinated Polyaniline
Advanced Electronic Materials - Tập 5 Số 12 - 2019
Yu‐Cheng Chen, Yibing Xie
AbstractManganese (II) coordinated polyaniline (PANI‐Mn) is designed as an energy‐storage electrode to improve electrochemical cycling stability of conductive polymer‐based supercapacitors. A PANI‐Mn electrode is synthesized through electro‐polymerization and hydrothermal coordination processes. A tetrahedron coordination structure is formed between manganese (II) ...... hiện toàn bộ
Lead Replacement in CH3NH3PbI3 Perovskites
Advanced Electronic Materials - Tập 1 Số 10 - 2015
Kan Wang, Ziqi Liang, Xinqiang Wang, Xudong Cui
Superior photovoltaic performance in organic–inorganic hybrid perovskite is based on the unique properties of each moiety contined within it. Identifying the role of metal atoms in the perovskite is of great importance to explore the low‐toxicity lead‐free perovskite solar cells. By using the first‐principle calculations, four types of AMX3 (A = CH3... hiện toàn bộ
2D Tin Monoxide—An Unexplored p‐Type van der Waals Semiconductor: Material Characteristics and Field Effect Transistors
Advanced Electronic Materials - Tập 2 Số 4 - 2016
K.J. Saji, Kun Tian, Michael Snure, Ashutosh Tiwari
2D materials are considered promising candidates for developing next‐generation high‐performance energy efficient electronic, optoelectronic, and valley‐tronic devices. Though metal oxides are widely used in the fabrication of many advanced devices, very little work has been reported on their properties in 2D limit. This article reports the discovery of a new 2D materials system, 2D tin mo...... hiện toàn bộ
Novel Scale‐Like Structures of Graphite/TiC/Ti3C2 Hybrids for Electromagnetic Absorption
Advanced Electronic Materials - Tập 4 Số 5 - 2018
Mian Li, Meikang Han, Jie Zhou, Qihuang Deng, Xiaobing Zhou, Jianming Xue, Shiyu Du, Xiaowei Yin, Qing Huang
AbstractElectromagnetic (EM) absorbing and shielding materials have attracted great interests due to the increasing electromagnetic pollutions in the past years. Microstructure plays a crucial role in determining the performance of the above materials. Herein, a scale‐like structure based on Ti3C2 Mxenes is proposed to appr...... hiện toàn bộ
Perovskite BiFeO3–BaTiO3 Ferroelectrics: Engineering Properties by Domain Evolution and Thermal Depolarization Modification
Advanced Electronic Materials - Tập 6 Số 5 - 2020
Ting Zheng, Jiagang Wu
AbstractBismuth ferrite (BFO)‐based ceramics with large electromechanical response are important in electronic device applications. To better understand their physical mechanisms, a new phase diagram established by temperature dependence of dielectric properties, temperature dependence of piezoelectric coefficient, and the evolution of their properties is proposed ...... hiện toàn bộ
High Luminance Fiber‐Based Polymer Light‐Emitting Devices by a Dip‐Coating Method
Advanced Electronic Materials - Tập 1 Số 9 - 2015
Seonil Kwon, Woohyun Kim, Hyun‐Cheol Kim, Seungyeop Choi, Byoung‐Cheul Park, Sin‐Hyeok Kang, Kyung Cheol Choi
Investigation of Energy Levels and Crystal Structures of Cesium Lead Halides and Their Application in Full‐Color Light‐Emitting Diodes
Advanced Electronic Materials - Tập 3 Số 1 - 2017
Quyet Van Le, Min-Joon Park, Woonbae Sohn, Ho Won Jang, Soo Young Kim
Inorganic CsPbX3 perovskites with compositions including CsPbBrxCl3−x, CsPbBr3, and CsPbBrxI3−x are synthesized, and...... hiện toàn bộ
Dimensionality Dependent Plasticity in Halide Perovskite Artificial Synapses for Neuromorphic Computing
Advanced Electronic Materials - Tập 5 Số 9 - 2019
Sung‐Il Kim, Yeongjun Lee, Min‐Ho Park, Gyeong‐Tak Go, Young‐Hoon Kim, Wentao Xu, Hyeon‐Dong Lee, Hobeom Kim, Dae‐Gyo Seo, Wanhee Lee, Tae‐Woo Lee
AbstractThe hysteretic behavior of organic–inorganic halide perovskites (OHPs) are exploited for application in neuromorphic electronics. Artificial synapses with 2D and quasi‐2D perovskite are demonstrated that have a bulky organic cation (phenethylammonium (PEA)) to form structures of (PEA)2MAn<...... hiện toàn bộ
Highly Linear and Symmetric Weight Modification in HfO2‐Based Memristive Devices for High‐Precision Weight Entries
Advanced Electronic Materials - Tập 6 Số 9 - 2020
Jin Joo Ryu, Kanghyeok Jeon, Guhyun Kim, Min Yang, Chunjoong Kim, Doo Seok Jeong, Gun Hwan Kim
AbstractIn this study, highly reliable and accurate weight‐modification behaviors are realized using a W/Al2O3 (3 nm)/HfO2 (7 nm)/TiN memristive device. The accuracy of the simulated inference of the MNIST dataset when considering the weight‐modification behavior is ≈95%. It is determined the optimal pr...... hiện toàn bộ
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