Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)
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Feasibility of 50-nm device manufacture by 157-nm optical lithography: an initial assessment
- Trang 31-34
The normalized process latitude (NPL) is used to assess the feasibility of 50-nm device manufacture by 157-nm optical lithography. A first NPL quantification assuming steady improvement of processing technology shows that 157-nm optical lithography is infeasible. A second NPL quantification investigates the amount of technology acceleration required to make 50-nm manufacture possible. It is conclu......
#Optical devices #Lithography #Focusing #Optical sensors #Manufacturing processes #Image quality #Robustness #Acceleration #Integrated circuit technology #Resists
Planar optical waveguide amplifiers
- Trang 11-14
Progress in erbium doped waveguide devices has been significant over the past few years, and commercial products are now available. In this paper, planar rare earth doped waveguide amplifiers, including Er/sup 3+/ doped and Er/sup 3+//Yb/sup 3+/ codoped waveguide devices, for telecommunication applications are reviewed.
#Stimulated emission #Optical waveguides #Optical planar waveguides #Planar waveguides #Semiconductor optical amplifiers #Optical amplifiers #Glass #Erbium #Waveguide lasers #Optical device fabrication
Application of shape memory alloy as detector material for far-infrared imaging transducers
- Trang 59-61
Based on the thermo-mechanical deformation property of shape memory alloys (SMAs), a nickel-titanium shape memory alloy (NiTi SMA) is used to construct an infrared imaging device. The NiTi SMA device is in the form of a thin film cantilever pixel. The absorption of energy from the impinging infrared radiation changes the horizontal tilt of the pixel due to the reverse martensitic transformation of......
#Shape memory alloys #Detectors #Transducers #Infrared imaging #Optical imaging #Thermomechanical processes #Thin film devices #Electromagnetic wave absorption #Laser transitions #Laser beams
The gate misalignment effects of the sub-threshold characteristics of sub-100 nm DG-MOSFETs
- Trang 91-94 - 2002
In this paper, simulation results of the gate misalignment effects on the sub-threshold characteristics of asymmetric (ADG) and symmetric (SDG) double-gate MOSFET (DG-MOSFET) in the sub-100 nm regime are presented. Gates alignment in DG-MOSFETs becomes more and more difficult as devices are scaling down in non-self-aligned double-gate processes. The results show that gate misalignment effects are ......
#Fabrication #MOSFET circuits #Medical simulation #Threshold voltage #Inorganic materials #Computational modeling #Computer simulation #Costs #Protection #Dielectric constant
RF/microwave transistors: evolution, current status, and future trend
- Trang 5-10
Most applications for radio frequency/microwave (hereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background,......
#Radio frequency #Microwave transistors #Consumer electronics #Cutoff frequency #Satellite broadcasting #Hydrogen #Frequency estimation #Explosives #Wireless communication #Wireless LAN
Amorphous silicon deposition temperature optimization on advanced polysilicon thin-film formation using metal-induced lateral crystallization technology
- Trang 27-30
Metal-induced lateral crystallization (MILC) has been recognized as a promising crystallization method for low-temperature thin-film transistor (TFT) applications, such as active matrix liquid crystal display (AMLCD) technology. Advanced low-temperature TFT performances, which can be obtained by improving the quality of MILC polysilicon layer, are highly important. Changing the quality of amorphou......
#Amorphous silicon #Temperature #Semiconductor thin films #Sputtering #Crystallization #Nickel #Annealing #Microwave integrated circuits #Thin film transistors #Substrates
Electrical characteristics of novel hafnium oxide film
- Trang 51-54
Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characteristics of hafnium oxide and its interface layer were studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the interface ......
#Electric variables #Hafnium oxide #Sputtering #Annealing #Dielectric thin films #Silicon #Dielectric substrates #Voltage #Dielectric measurements #Dielectric materials
Sensitivity improvement of the surface plasmon resonance optical sensor by using a gold-silver transducing layer
- Trang 63-68
It is well established that the surface plasmon resonance (SPR) optical sensor based on a metal-dielectric configuration can provide high sensitivity for many applications such as chemical and biological sensing. In fact the gold-dielectric configuration is most commonly used in the SPR sensor because of the fact that the thin gold layer can provide stable performance and good chemical resistance.......
#Plasmons #Resonance #Optical sensors #Chemical and biological sensors #Sensor phenomena and characterization #Biosensors #Gold #Chemical sensors #Immune system #Silver
A simple model of short channel MOSFET including velocity overshoot
- Trang 87-90
In this paper, a simple model for short channel MOSFET including velocity overshoot is proposed. The model is developed based on the velocity overshoot model obtained from the solution of energy balance equation under the assumption of displaced Maxwellian distribution. The resulting velocity model is the augmented drift-diffusion velocity model and all parameters involved are physical parameters.......
#MOSFET circuits #Degradation #Lattices #Voltage #Electrons #Analytical models #Temperature dependence #Maxwell equations #Predictive models #Thermoelectricity
Numerical study of one-fold coordinated oxygen atom in silicon gate oxide
- Trang 39-42
The capturing properties of nonbridging oxygen hole centers with unpaired electrons /spl equiv/SiO/spl middot/ and hydrogen defects /spl equiv/SiOH in silicon oxide have been studied using the ab initio density-functional method. It was found that the /spl equiv/SiO/spl middot/ defect is an electron trap and should be the responsible candidate for better hardness against radiation for the metal-ox......
#Oxygen #Silicon #Electron traps #Charge carrier processes #Dielectric substrates #Luminescence #Physics #Hydrogen #Oxidation #Dielectric devices