Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)
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Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)
- 2002
Presents the title page of the proceedings record.
A study on theoretical representation of intermodulation in CMOS balanced mixers
- Trang 107-110
Intermodulation of CMOS balanced mixers is analyzed in this paper with the aim
of reducing the effects of intermodulation distortion into a set of simple
equations. The analysis consists of a theoretical study and simulation results.
Analysis and simulations results reveal that the mechanism of intermodulation in
balanced mixers is too complex to be represented by simple equations. Numerical
metho...
#Switches #Transceivers #Dynamic range #Circuits #Equations #Image converters #Intermodulation distortion #Analytical models #Radio frequency #Baseband
High-speed mixed signal and RF circuit design with compact waffle MOSFET
- Trang 103-106 - 2002
A compact waffle MOSFET layout scheme is used to fabricate high-speed
mixed-signal circuits and RF circuits. Due to the compactness of the waffle
MOSFET, it saves more than 30% of chip area. The extracted parameters indicate a
20-40% reduction in source/drain diffusion capacitance and gate resistance. This
reduction results in more than 10% improvement in the propagation delay of
buffer circuits a...
#RF signals #Radio frequency #Circuit synthesis #MOSFET circuits #Capacitance #FETs #Operational amplifiers #Radiofrequency amplifiers #Active inductors #CMOS technology
Approaches and options for modeling sub-0.1 /spl mu/m CMOS devices
- Trang 79-82 - 2002
This paper attempts to provide a general guideline to develop a practical model
for MOSFETs in the sub 0,1 /spl mu/m generations. It starts by giving an
overview of the different modeling approaches and options including charge based
approach, surface potential based approach, and conductance based approach.
Their relative advantages and weaknesses will be discussed. The evolution of the
BSIM mode...
#Semiconductor device modeling #CMOS technology #Circuit simulation #MOSFETs #Helium #Electronic mail #Guidelines #Acceleration #Modems #Software engineering
Synthesis and characterization of SrTiO/sub 3/ thin films by a modified metalorganic decomposition technique
- Trang 15-19
High quality strontium titanate thin films on platinized Si(100) have been
synthesized using non-poisonous inorganic solvent and a layer-by-layer annealing
technique at different temperatures. The films have shown good structural and
electrical properties. The dielectric constant and dissipation factor at a
frequency of 100 MHz are 230 and 0.05, respectively, for a 80 nm thick film
annealed at 650...
#Annealing #Capacitance #Voltage #Strontium #Titanium compounds #Dielectric thin films #Solvents #Temperature #Dielectric constant #Frequency
Feasibility of 50-nm device manufacture by 157-nm optical lithography: an initial assessment
- Trang 31-34
The normalized process latitude (NPL) is used to assess the feasibility of 50-nm
device manufacture by 157-nm optical lithography. A first NPL quantification
assuming steady improvement of processing technology shows that 157-nm optical
lithography is infeasible. A second NPL quantification investigates the amount
of technology acceleration required to make 50-nm manufacture possible. It is
conclu...
#Optical devices #Lithography #Focusing #Optical sensors #Manufacturing processes #Image quality #Robustness #Acceleration #Integrated circuit technology #Resists
A simple model of short channel MOSFET including velocity overshoot
- Trang 87-90
In this paper, a simple model for short channel MOSFET including velocity
overshoot is proposed. The model is developed based on the velocity overshoot
model obtained from the solution of energy balance equation under the assumption
of displaced Maxwellian distribution. The resulting velocity model is the
augmented drift-diffusion velocity model and all parameters involved are
physical parameters....
#MOSFET circuits #Degradation #Lattices #Voltage #Electrons #Analytical models #Temperature dependence #Maxwell equations #Predictive models #Thermoelectricity
The gate misalignment effects of the sub-threshold characteristics of sub-100 nm DG-MOSFETs
- Trang 91-94 - 2002
In this paper, simulation results of the gate misalignment effects on the
sub-threshold characteristics of asymmetric (ADG) and symmetric (SDG)
double-gate MOSFET (DG-MOSFET) in the sub-100 nm regime are presented. Gates
alignment in DG-MOSFETs becomes more and more difficult as devices are scaling
down in non-self-aligned double-gate processes. The results show that gate
misalignment effects are ...
#Fabrication #MOSFET circuits #Medical simulation #Threshold voltage #Inorganic materials #Computational modeling #Computer simulation #Costs #Protection #Dielectric constant
High-temperature quasi-saturation model of high-voltage DMOS power devices
- Trang 83-86
This paper reports the analysis of the high-temperature (300 K-400 K)
quasi-saturation behavior of high-voltage DMOS devices using a closed-form
quasi-saturation model. Based on the analytical model, at the higher
temperature, the quasi-saturation behavior occurs at a smaller gate voltage due
to the smaller saturated velocity as verified by the MEDICI results.
#Electrons #Temperature dependence #Threshold voltage #Region 2 #Telephony #Analytical models #Medical simulation #Temperature distribution #Region 3
Enhanced reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation
- Trang 35-38
Polysilicon thin-film transistors (poly-Si TFTs) fabricated solely by
low-temperature processes (under 600/spl deg/C) are treated with nitridation
using NO plasma. Their properties are investigated at room temperature under
high-field stress. It is found that the plasma is effective in improving the
gate-oxide hardness against stress-induced damage, with the nitrided device
showing a smaller shift...
#Dielectrics #Thin film transistors #Plasma devices #Plasma temperature #Plasma properties #Stress #Plasma displays #Threshold voltage #Transconductance #Glass