Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)
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A study on theoretical representation of intermodulation in CMOS balanced mixers
- Trang 107-110
Intermodulation of CMOS balanced mixers is analyzed in this paper with the aim of reducing the effects of intermodulation distortion into a set of simple equations. The analysis consists of a theoretical study and simulation results. Analysis and simulations results reveal that the mechanism of intermodulation in balanced mixers is too complex to be represented by simple equations. Numerical metho......
#Switches #Transceivers #Dynamic range #Circuits #Equations #Image converters #Intermodulation distortion #Analytical models #Radio frequency #Baseband
Synthesis and characterization of SrTiO/sub 3/ thin films by a modified metalorganic decomposition technique
- Trang 15-19
High quality strontium titanate thin films on platinized Si(100) have been synthesized using non-poisonous inorganic solvent and a layer-by-layer annealing technique at different temperatures. The films have shown good structural and electrical properties. The dielectric constant and dissipation factor at a frequency of 100 MHz are 230 and 0.05, respectively, for a 80 nm thick film annealed at 650......
#Annealing #Capacitance #Voltage #Strontium #Titanium compounds #Dielectric thin films #Solvents #Temperature #Dielectric constant #Frequency
Ứng dụng của cộng hưởng plasmon bề mặt quang phổ trong cảm biến áp suất khí Dịch bởi AI
- Trang 73-77
Một cảm biến áp suất dựa trên phản ứng quang phổ liên quan đến cộng hưởng plasmon bề mặt (SPR) xảy ra trên bề mặt vàng 50 nm được mô tả. Hoạt động của thiết bị dựa trên việc chỉ số khúc xạ của khí thay đổi theo áp suất. Vì điều kiện cho SPR cực kỳ nhạy cảm với sự biến đổi của chỉ số khúc xạ, áp suất của khí tiếp xúc với bề mặt cảm biến có thể được phát hiện. Trong cảm biến SPR quang phổ của chúng ......
#Plasmon #Cộng hưởng #Sóng bề mặt quang học #Chỉ số khúc xạ #Hiện tượng và định tính cảm biến #Cảm biến sinh học #Cảm biến quang học #Đo lực #Đo áp suất #Khúc xạ quang học
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)
- 2002
Presents the title page of the proceedings record.
Feasibility of 50-nm device manufacture by 157-nm optical lithography: an initial assessment
- Trang 31-34
The normalized process latitude (NPL) is used to assess the feasibility of 50-nm device manufacture by 157-nm optical lithography. A first NPL quantification assuming steady improvement of processing technology shows that 157-nm optical lithography is infeasible. A second NPL quantification investigates the amount of technology acceleration required to make 50-nm manufacture possible. It is conclu......
#Optical devices #Lithography #Focusing #Optical sensors #Manufacturing processes #Image quality #Robustness #Acceleration #Integrated circuit technology #Resists
Approaches and options for modeling sub-0.1 /spl mu/m CMOS devices
- Trang 79-82 - 2002
This paper attempts to provide a general guideline to develop a practical model for MOSFETs in the sub 0,1 /spl mu/m generations. It starts by giving an overview of the different modeling approaches and options including charge based approach, surface potential based approach, and conductance based approach. Their relative advantages and weaknesses will be discussed. The evolution of the BSIM mode......
#Semiconductor device modeling #CMOS technology #Circuit simulation #MOSFETs #Helium #Electronic mail #Guidelines #Acceleration #Modems #Software engineering
Electrical characteristics of novel hafnium oxide film
- Trang 51-54
Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characteristics of hafnium oxide and its interface layer were studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the interface ......
#Electric variables #Hafnium oxide #Sputtering #Annealing #Dielectric thin films #Silicon #Dielectric substrates #Voltage #Dielectric measurements #Dielectric materials
Design of multi-finger HBTs with a thermal-electrical model
- Trang 95-98
Temperature distribution on the emitter fingers of heterojunction bipolar transistors (HBTs) is studied with a three-dimensional thermal-electrical model. Using this model, multi-finger HBTs is designed with non-uniform spacing. An efficient design procedure is presented. The calculated results show significant temperature reduction on non-uniform spacing devices.
#Fingers #Heterojunction bipolar transistors #Temperature distribution #Electronic ballasts #Resistors #Equations #Gallium arsenide #Thermal conductivity #Electronic mail #Delay
RF/microwave transistors: evolution, current status, and future trend
- Trang 5-10
Most applications for radio frequency/microwave (hereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background,......
#Radio frequency #Microwave transistors #Consumer electronics #Cutoff frequency #Satellite broadcasting #Hydrogen #Frequency estimation #Explosives #Wireless communication #Wireless LAN
Characteristics of high quality hafnium oxide gate dielectric
- Trang 43-46
Hafnium oxide (HfO/sub 2/) was investigated as an alternative possible gate dielectric. A MOS capacitor using HfO/sub 2/ as dielectric was fabricated and studied. The HfO/sub 2/ film was formed by direct sputtering of Hf in O/sub 2/ and Ar ambient on to a Si substrate and post-sputtering rapid thermal annealing (RTA). XPS results showed that the interface layer formed between the HfO/sub 2/ and th......
#Hafnium oxide #Dielectric substrates #Rapid thermal annealing #Leakage current #Bonding #Sputtering #Temperature #High K dielectric materials #Capacitors #Chemicals