Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)
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Application of differential phase measurement technique to surface plasmon resonance imaging sensors
- Trang 55-58
In this paper, a differential phase imaging technique applied to optical surface plasmon resonance (SPR) sensors is presented. The technique makes use of the s-polarisation as the reference beam to interfere with the p-polarisation, of which the phase has a close relationship with the change of SPR conditions at the sensor surface. As a trial experiment, the SPR phase shift between water and air h...... hiện toàn bộ
#Phase measurement #Plasmons #Resonance #Image sensors #Optical imaging #Optical surface waves #Polarization #Optical films #Optical sensors #Absorption
Effects of Nb concentration on photo-electrical properties of Sr/sub 1-x/La/sub x/Nb/sub y/Ti/sub 1-y/O/sub 3/ thin-film resistor
- Trang 21-25
Strontium lanthanum titanate-niobate (SrLaNb/sub x/Ti/sub 1-x/O/sub 3/) thin-film resistors are fabricated on SiO/sub 2//Si substrates by an argon ion-beam sputtering technique. Measurements show that the thin-film resistor has superior sensitivity for visible light. Moreover, the effects of Nb concentration on the photo-electrical properties of Sr/sub 1-x/La/sub x/Nb/sub y/Ti/sub 1-y/O/sub 3/ thi...... hiện toàn bộ
#Niobium #Strontium #Sputtering #Resistors #Lanthanum #Titanium compounds #Semiconductor thin films #Substrates #Argon #Transistors
Design of multi-finger HBTs with a thermal-electrical model
- Trang 95-98
Temperature distribution on the emitter fingers of heterojunction bipolar transistors (HBTs) is studied with a three-dimensional thermal-electrical model. Using this model, multi-finger HBTs is designed with non-uniform spacing. An efficient design procedure is presented. The calculated results show significant temperature reduction on non-uniform spacing devices.
#Fingers #Heterojunction bipolar transistors #Temperature distribution #Electronic ballasts #Resistors #Equations #Gallium arsenide #Thermal conductivity #Electronic mail #Delay
High-speed mixed signal and RF circuit design with compact waffle MOSFET
- Trang 103-106 - 2002
A compact waffle MOSFET layout scheme is used to fabricate high-speed mixed-signal circuits and RF circuits. Due to the compactness of the waffle MOSFET, it saves more than 30% of chip area. The extracted parameters indicate a 20-40% reduction in source/drain diffusion capacitance and gate resistance. This reduction results in more than 10% improvement in the propagation delay of buffer circuits a...... hiện toàn bộ
#RF signals #Radio frequency #Circuit synthesis #MOSFET circuits #Capacitance #FETs #Operational amplifiers #Radiofrequency amplifiers #Active inductors #CMOS technology
Enhanced reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation
- Trang 35-38
Polysilicon thin-film transistors (poly-Si TFTs) fabricated solely by low-temperature processes (under 600/spl deg/C) are treated with nitridation using NO plasma. Their properties are investigated at room temperature under high-field stress. It is found that the plasma is effective in improving the gate-oxide hardness against stress-induced damage, with the nitrided device showing a smaller shift...... hiện toàn bộ
#Dielectrics #Thin film transistors #Plasma devices #Plasma temperature #Plasma properties #Stress #Plasma displays #Threshold voltage #Transconductance #Glass
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)
- 2002
Presents the title page of the proceedings record.
Electrical characteristics of stressing for silicon oxynitride thin film
- Trang 47-50
Capacitors using thin oxynitride films as dielectric layer were fabricated. I-V measurements and constant current stressing to the samples of oxynitride capacitors were done. C-V measurements to the samples were also carried out. By applying constant current stressing to the samples, characteristics of oxynitride samples after stressing could be observed. The stressing current to the samples could...... hiện toàn bộ
#Electric variables #Silicon #Semiconductor thin films #Dielectric thin films #Capacitors #Dielectric measurements #Nonvolatile memory #Dielectric films #Current measurement #Stress measurement
Electrical characteristics of novel hafnium oxide film
- Trang 51-54
Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characteristics of hafnium oxide and its interface layer were studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the interface ...... hiện toàn bộ
#Electric variables #Hafnium oxide #Sputtering #Annealing #Dielectric thin films #Silicon #Dielectric substrates #Voltage #Dielectric measurements #Dielectric materials
Application of shape memory alloy as detector material for far-infrared imaging transducers
- Trang 59-61
Based on the thermo-mechanical deformation property of shape memory alloys (SMAs), a nickel-titanium shape memory alloy (NiTi SMA) is used to construct an infrared imaging device. The NiTi SMA device is in the form of a thin film cantilever pixel. The absorption of energy from the impinging infrared radiation changes the horizontal tilt of the pixel due to the reverse martensitic transformation of...... hiện toàn bộ
#Shape memory alloys #Detectors #Transducers #Infrared imaging #Optical imaging #Thermomechanical processes #Thin film devices #Electromagnetic wave absorption #Laser transitions #Laser beams
Characteristics of high quality hafnium oxide gate dielectric
- Trang 43-46
Hafnium oxide (HfO/sub 2/) was investigated as an alternative possible gate dielectric. A MOS capacitor using HfO/sub 2/ as dielectric was fabricated and studied. The HfO/sub 2/ film was formed by direct sputtering of Hf in O/sub 2/ and Ar ambient on to a Si substrate and post-sputtering rapid thermal annealing (RTA). XPS results showed that the interface layer formed between the HfO/sub 2/ and th...... hiện toàn bộ
#Hafnium oxide #Dielectric substrates #Rapid thermal annealing #Leakage current #Bonding #Sputtering #Temperature #High K dielectric materials #Capacitors #Chemicals