Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)
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Các bài báo tiêu biểu
High-speed mixed signal and RF circuit design with compact waffle MOSFET
- Trang 103-106 - 2002
A compact waffle MOSFET layout scheme is used to fabricate high-speed
mixed-signal circuits and RF circuits. Due to the compactness of the waffle
MOSFET, it saves more than 30% of chip area. The extracted parameters indicate a
20-40% reduction in source/drain diffusion capacitance and gate resistance. This
reduction results in more than 10% improvement in the propagation delay of
buffer circuits a...
#RF signals #Radio frequency #Circuit synthesis #MOSFET circuits #Capacitance #FETs #Operational amplifiers #Radiofrequency amplifiers #Active inductors #CMOS technology
Application of differential phase measurement technique to surface plasmon resonance imaging sensors
- Trang 55-58
In this paper, a differential phase imaging technique applied to optical surface
plasmon resonance (SPR) sensors is presented. The technique makes use of the
s-polarisation as the reference beam to interfere with the p-polarisation, of
which the phase has a close relationship with the change of SPR conditions at
the sensor surface. As a trial experiment, the SPR phase shift between water and
air h...
#Phase measurement #Plasmons #Resonance #Image sensors #Optical imaging #Optical surface waves #Polarization #Optical films #Optical sensors #Absorption
High-temperature quasi-saturation model of high-voltage DMOS power devices
- Trang 83-86
This paper reports the analysis of the high-temperature (300 K-400 K)
quasi-saturation behavior of high-voltage DMOS devices using a closed-form
quasi-saturation model. Based on the analytical model, at the higher
temperature, the quasi-saturation behavior occurs at a smaller gate voltage due
to the smaller saturated velocity as verified by the MEDICI results.
#Electrons #Temperature dependence #Threshold voltage #Region 2 #Telephony #Analytical models #Medical simulation #Temperature distribution #Region 3
Planar optical waveguide amplifiers
- Trang 11-14
Progress in erbium doped waveguide devices has been significant over the past
few years, and commercial products are now available. In this paper, planar rare
earth doped waveguide amplifiers, including Er/sup 3+/ doped and Er/sup
3+//Yb/sup 3+/ codoped waveguide devices, for telecommunication applications are
reviewed.
#Stimulated emission #Optical waveguides #Optical planar waveguides #Planar waveguides #Semiconductor optical amplifiers #Optical amplifiers #Glass #Erbium #Waveguide lasers #Optical device fabrication
Ứng dụng của cộng hưởng plasmon bề mặt quang phổ trong cảm biến áp suất khí Dịch bởi AI
- Trang 73-77
Một cảm biến áp suất dựa trên phản ứng quang phổ liên quan đến cộng hưởng
plasmon bề mặt (SPR) xảy ra trên bề mặt vàng 50 nm được mô tả. Hoạt động của
thiết bị dựa trên việc chỉ số khúc xạ của khí thay đổi theo áp suất. Vì điều
kiện cho SPR cực kỳ nhạy cảm với sự biến đổi của chỉ số khúc xạ, áp suất của khí
tiếp xúc với bề mặt cảm biến có thể được phát hiện. Trong cảm biến SPR quang phổ
của chúng ...
#Plasmon #Cộng hưởng #Sóng bề mặt quang học #Chỉ số khúc xạ #Hiện tượng và định tính cảm biến #Cảm biến sinh học #Cảm biến quang học #Đo lực #Đo áp suất #Khúc xạ quang học
Electrical characteristics of novel hafnium oxide film
- Trang 51-54
Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen
ambient was investigated. XPS results showed that the interface between the
hafnium oxide and silicon substrate was bad. The electrical characteristics of
hafnium oxide and its interface layer were studied in detail by
capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was
observed that the interface ...
#Electric variables #Hafnium oxide #Sputtering #Annealing #Dielectric thin films #Silicon #Dielectric substrates #Voltage #Dielectric measurements #Dielectric materials
A study on theoretical representation of intermodulation in CMOS balanced mixers
- Trang 107-110
Intermodulation of CMOS balanced mixers is analyzed in this paper with the aim
of reducing the effects of intermodulation distortion into a set of simple
equations. The analysis consists of a theoretical study and simulation results.
Analysis and simulations results reveal that the mechanism of intermodulation in
balanced mixers is too complex to be represented by simple equations. Numerical
metho...
#Switches #Transceivers #Dynamic range #Circuits #Equations #Image converters #Intermodulation distortion #Analytical models #Radio frequency #Baseband
Sensitivity improvement of the surface plasmon resonance optical sensor by using a gold-silver transducing layer
- Trang 63-68
It is well established that the surface plasmon resonance (SPR) optical sensor
based on a metal-dielectric configuration can provide high sensitivity for many
applications such as chemical and biological sensing. In fact the
gold-dielectric configuration is most commonly used in the SPR sensor because of
the fact that the thin gold layer can provide stable performance and good
chemical resistance....
#Plasmons #Resonance #Optical sensors #Chemical and biological sensors #Sensor phenomena and characterization #Biosensors #Gold #Chemical sensors #Immune system #Silver
Application of shape memory alloy as detector material for far-infrared imaging transducers
- Trang 59-61
Based on the thermo-mechanical deformation property of shape memory alloys
(SMAs), a nickel-titanium shape memory alloy (NiTi SMA) is used to construct an
infrared imaging device. The NiTi SMA device is in the form of a thin film
cantilever pixel. The absorption of energy from the impinging infrared radiation
changes the horizontal tilt of the pixel due to the reverse martensitic
transformation of...
#Shape memory alloys #Detectors #Transducers #Infrared imaging #Optical imaging #Thermomechanical processes #Thin film devices #Electromagnetic wave absorption #Laser transitions #Laser beams
Design of multi-finger HBTs with a thermal-electrical model
- Trang 95-98
Temperature distribution on the emitter fingers of heterojunction bipolar
transistors (HBTs) is studied with a three-dimensional thermal-electrical model.
Using this model, multi-finger HBTs is designed with non-uniform spacing. An
efficient design procedure is presented. The calculated results show significant
temperature reduction on non-uniform spacing devices.
#Fingers #Heterojunction bipolar transistors #Temperature distribution #Electronic ballasts #Resistors #Equations #Gallium arsenide #Thermal conductivity #Electronic mail #Delay