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Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)

 

 

 

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Effects of Nb concentration on photo-electrical properties of Sr/sub 1-x/La/sub x/Nb/sub y/Ti/sub 1-y/O/sub 3/ thin-film resistor
- Trang 21-25
Bin Li, P.T. Lai, M.Q. Huang, G.Q. Li
Strontium lanthanum titanate-niobate (SrLaNb/sub x/Ti/sub 1-x/O/sub 3/) thin-film resistors are fabricated on SiO/sub 2//Si substrates by an argon ion-beam sputtering technique. Measurements show that the thin-film resistor has superior sensitivity for visible light. Moreover, the effects of Nb concentration on the photo-electrical properties of Sr/sub 1-x/La/sub x/Nb/sub y/Ti/sub 1-y/O/sub 3/ thi...... hiện toàn bộ
#Niobium #Strontium #Sputtering #Resistors #Lanthanum #Titanium compounds #Semiconductor thin films #Substrates #Argon #Transistors
A study on theoretical representation of intermodulation in CMOS balanced mixers
- Trang 107-110
Jun Wang, A.K.K. Wong
Intermodulation of CMOS balanced mixers is analyzed in this paper with the aim of reducing the effects of intermodulation distortion into a set of simple equations. The analysis consists of a theoretical study and simulation results. Analysis and simulations results reveal that the mechanism of intermodulation in balanced mixers is too complex to be represented by simple equations. Numerical metho...... hiện toàn bộ
#Switches #Transceivers #Dynamic range #Circuits #Equations #Image converters #Intermodulation distortion #Analytical models #Radio frequency #Baseband
High-temperature quasi-saturation model of high-voltage DMOS power devices
- Trang 83-86
C.L. Yang, J.B. Kuo
This paper reports the analysis of the high-temperature (300 K-400 K) quasi-saturation behavior of high-voltage DMOS devices using a closed-form quasi-saturation model. Based on the analytical model, at the higher temperature, the quasi-saturation behavior occurs at a smaller gate voltage due to the smaller saturated velocity as verified by the MEDICI results.
#Electrons #Temperature dependence #Threshold voltage #Region 2 #Telephony #Analytical models #Medical simulation #Temperature distribution #Region 3
RF/microwave transistors: evolution, current status, and future trend
- Trang 5-10
J.J. Liou, F. Schwierz
Most applications for radio frequency/microwave (hereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background,...... hiện toàn bộ
#Radio frequency #Microwave transistors #Consumer electronics #Cutoff frequency #Satellite broadcasting #Hydrogen #Frequency estimation #Explosives #Wireless communication #Wireless LAN
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)
- 2002
Presents the title page of the proceedings record.
Design of multi-finger HBTs with a thermal-electrical model
- Trang 95-98
Yang-Hua Chang, Chen-Chun Chang-Chiang, Yueh-Cheng Lee, Chi-Chung Liu
Temperature distribution on the emitter fingers of heterojunction bipolar transistors (HBTs) is studied with a three-dimensional thermal-electrical model. Using this model, multi-finger HBTs is designed with non-uniform spacing. An efficient design procedure is presented. The calculated results show significant temperature reduction on non-uniform spacing devices.
#Fingers #Heterojunction bipolar transistors #Temperature distribution #Electronic ballasts #Resistors #Equations #Gallium arsenide #Thermal conductivity #Electronic mail #Delay
Feasibility of 50-nm device manufacture by 157-nm optical lithography: an initial assessment
- Trang 31-34
Pong Wing Tai, A. Wong
The normalized process latitude (NPL) is used to assess the feasibility of 50-nm device manufacture by 157-nm optical lithography. A first NPL quantification assuming steady improvement of processing technology shows that 157-nm optical lithography is infeasible. A second NPL quantification investigates the amount of technology acceleration required to make 50-nm manufacture possible. It is conclu...... hiện toàn bộ
#Optical devices #Lithography #Focusing #Optical sensors #Manufacturing processes #Image quality #Robustness #Acceleration #Integrated circuit technology #Resists
Enhanced reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation
- Trang 35-38
D.C.T. Or, P.T. Lai, J.K.O. Sin, J.P. Xu
Polysilicon thin-film transistors (poly-Si TFTs) fabricated solely by low-temperature processes (under 600/spl deg/C) are treated with nitridation using NO plasma. Their properties are investigated at room temperature under high-field stress. It is found that the plasma is effective in improving the gate-oxide hardness against stress-induced damage, with the nitrided device showing a smaller shift...... hiện toàn bộ
#Dielectrics #Thin film transistors #Plasma devices #Plasma temperature #Plasma properties #Stress #Plasma displays #Threshold voltage #Transconductance #Glass
Numerical study of one-fold coordinated oxygen atom in silicon gate oxide
- Trang 39-42
V.A. Gritsenko, A. Shaposhnikov, Yu.N. Novikov, A.P. Baraban, Hei Wong, G.M. Zhidomirov, M. Roger
The capturing properties of nonbridging oxygen hole centers with unpaired electrons /spl equiv/SiO/spl middot/ and hydrogen defects /spl equiv/SiOH in silicon oxide have been studied using the ab initio density-functional method. It was found that the /spl equiv/SiO/spl middot/ defect is an electron trap and should be the responsible candidate for better hardness against radiation for the metal-ox...... hiện toàn bộ
#Oxygen #Silicon #Electron traps #Charge carrier processes #Dielectric substrates #Luminescence #Physics #Hydrogen #Oxidation #Dielectric devices
Optical storage disc based on the frequency up-conversion effect from rare earth ions
- Trang 117-120
Ho-Pui Ho, Wing-Wai Wong, Shu-Yuen Wu, E.E.Y. Pun
The application of infrared-to-visible upconversion in rare earth (Ho/sup 3+//Yb/sup 3+/) co-doped TeO/sub x/ sol-gel thin film for optical storage has been investigated. Optical discs with the storage layer made from rare-earth co-doped TeO/sub x/ sol-gel thin films have been studied in terms of minimum bit-size and up-conversion efficiency. The possibility of a multi-layered architecture has als...... hiện toàn bộ
#Particle beam optics #Frequency #Optical films #Optical scattering #Optical crosstalk #Biomedical optical imaging #Optical sensors #Optical recording #Optical materials #Phonons