Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)
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A study on theoretical representation of intermodulation in CMOS balanced mixers
- Trang 107-110
Intermodulation of CMOS balanced mixers is analyzed in this paper with the aim of reducing the effects of intermodulation distortion into a set of simple equations. The analysis consists of a theoretical study and simulation results. Analysis and simulations results reveal that the mechanism of intermodulation in balanced mixers is too complex to be represented by simple equations. Numerical metho......
#Switches #Transceivers #Dynamic range #Circuits #Equations #Image converters #Intermodulation distortion #Analytical models #Radio frequency #Baseband
Characteristics of high quality hafnium oxide gate dielectric
- Trang 43-46
Hafnium oxide (HfO/sub 2/) was investigated as an alternative possible gate dielectric. A MOS capacitor using HfO/sub 2/ as dielectric was fabricated and studied. The HfO/sub 2/ film was formed by direct sputtering of Hf in O/sub 2/ and Ar ambient on to a Si substrate and post-sputtering rapid thermal annealing (RTA). XPS results showed that the interface layer formed between the HfO/sub 2/ and th......
#Hafnium oxide #Dielectric substrates #Rapid thermal annealing #Leakage current #Bonding #Sputtering #Temperature #High K dielectric materials #Capacitors #Chemicals
Electrical characteristics of novel hafnium oxide film
- Trang 51-54
Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characteristics of hafnium oxide and its interface layer were studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the interface ......
#Electric variables #Hafnium oxide #Sputtering #Annealing #Dielectric thin films #Silicon #Dielectric substrates #Voltage #Dielectric measurements #Dielectric materials
High-temperature quasi-saturation model of high-voltage DMOS power devices
- Trang 83-86
This paper reports the analysis of the high-temperature (300 K-400 K) quasi-saturation behavior of high-voltage DMOS devices using a closed-form quasi-saturation model. Based on the analytical model, at the higher temperature, the quasi-saturation behavior occurs at a smaller gate voltage due to the smaller saturated velocity as verified by the MEDICI results.
#Electrons #Temperature dependence #Threshold voltage #Region 2 #Telephony #Analytical models #Medical simulation #Temperature distribution #Region 3
Ứng dụng của cộng hưởng plasmon bề mặt quang phổ trong cảm biến áp suất khí Dịch bởi AI
- Trang 73-77
Một cảm biến áp suất dựa trên phản ứng quang phổ liên quan đến cộng hưởng plasmon bề mặt (SPR) xảy ra trên bề mặt vàng 50 nm được mô tả. Hoạt động của thiết bị dựa trên việc chỉ số khúc xạ của khí thay đổi theo áp suất. Vì điều kiện cho SPR cực kỳ nhạy cảm với sự biến đổi của chỉ số khúc xạ, áp suất của khí tiếp xúc với bề mặt cảm biến có thể được phát hiện. Trong cảm biến SPR quang phổ của chúng ......
#Plasmon #Cộng hưởng #Sóng bề mặt quang học #Chỉ số khúc xạ #Hiện tượng và định tính cảm biến #Cảm biến sinh học #Cảm biến quang học #Đo lực #Đo áp suất #Khúc xạ quang học
Sensitivity improvement of the surface plasmon resonance optical sensor by using a gold-silver transducing layer
- Trang 63-68
It is well established that the surface plasmon resonance (SPR) optical sensor based on a metal-dielectric configuration can provide high sensitivity for many applications such as chemical and biological sensing. In fact the gold-dielectric configuration is most commonly used in the SPR sensor because of the fact that the thin gold layer can provide stable performance and good chemical resistance.......
#Plasmons #Resonance #Optical sensors #Chemical and biological sensors #Sensor phenomena and characterization #Biosensors #Gold #Chemical sensors #Immune system #Silver
Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off
- Trang 111-115
Gallium nitride (GaN) thin films grown on sapphire substrates were successfully lifted onto silicon wafers using a laser lift-off (LLO) process induced by a 532 nm, Nd:YAG pulsed laser. Although the photon energy (2.33 eV) is much lower than the band gap of hexagonal GaN (3.41 eV), free-carriers absorption can heat up and consequently causes detachment of the GaN film from the sapphire substrate. ......
#Raman scattering #Spectroscopy #Gallium nitride #Substrates #Photonic band gap #III-V semiconductor materials #Semiconductor thin films #Silicon #Optical pulses #Absorption
High-current injection in Spreading-Resistance Temperature sensor on SOI
- Trang 69-72
A high-current injection phenomenon was found in Spreading-Resistance Temperature (SRT) sensor on SOI. Simulation and experiment of the sensor with different silicon-film thicknesses and doping concentrations were conducted to demonstrate this phenomenon, which can be explained by the conductivity modulation model normally used in LIGBT. This study is very helpful for designing the operating curre......
#Temperature sensors #Thick film sensors #Sensor phenomena and characterization #Doping #Thin film sensors #Conductivity #Thermal sensors #Silicon compounds #Physics #Silicon devices
Feasibility of 50-nm device manufacture by 157-nm optical lithography: an initial assessment
- Trang 31-34
The normalized process latitude (NPL) is used to assess the feasibility of 50-nm device manufacture by 157-nm optical lithography. A first NPL quantification assuming steady improvement of processing technology shows that 157-nm optical lithography is infeasible. A second NPL quantification investigates the amount of technology acceleration required to make 50-nm manufacture possible. It is conclu......
#Optical devices #Lithography #Focusing #Optical sensors #Manufacturing processes #Image quality #Robustness #Acceleration #Integrated circuit technology #Resists
Optical storage disc based on the frequency up-conversion effect from rare earth ions
- Trang 117-120
The application of infrared-to-visible upconversion in rare earth (Ho/sup 3+//Yb/sup 3+/) co-doped TeO/sub x/ sol-gel thin film for optical storage has been investigated. Optical discs with the storage layer made from rare-earth co-doped TeO/sub x/ sol-gel thin films have been studied in terms of minimum bit-size and up-conversion efficiency. The possibility of a multi-layered architecture has als......
#Particle beam optics #Frequency #Optical films #Optical scattering #Optical crosstalk #Biomedical optical imaging #Optical sensors #Optical recording #Optical materials #Phonons