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Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)

 

 

 

 

Cơ quản chủ quản:  N/A

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High-speed mixed signal and RF circuit design with compact waffle MOSFET
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#RF signals #Radio frequency #Circuit synthesis #MOSFET circuits #Capacitance #FETs #Operational amplifiers #Radiofrequency amplifiers #Active inductors #CMOS technology
Sensitivity improvement of the surface plasmon resonance optical sensor by using a gold-silver transducing layer
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S.Y. Wu, H.P. Ho
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High-current injection in Spreading-Resistance Temperature sensor on SOI
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Z.H. Wu, P.T. Lai, Bin Li, J.K.O. Sin
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RF/microwave transistors: evolution, current status, and future trend
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J.J. Liou, F. Schwierz
#Radio frequency #Microwave transistors #Consumer electronics #Cutoff frequency #Satellite broadcasting #Hydrogen #Frequency estimation #Explosives #Wireless communication #Wireless LAN
Electrical characteristics of stressing for silicon oxynitride thin film
- Trang 47-50
P.J. Chan, M.C. Poon, H. Wong, C.W. Kok
#Electric variables #Silicon #Semiconductor thin films #Dielectric thin films #Capacitors #Dielectric measurements #Nonvolatile memory #Dielectric films #Current measurement #Stress measurement
Ứng dụng của cộng hưởng plasmon bề mặt quang phổ trong cảm biến áp suất khí Dịch bởi AI
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H.P. Ho, C.L. Wong
#Plasmon #Cộng hưởng #Sóng bề mặt quang học #Chỉ số khúc xạ #Hiện tượng và định tính cảm biến #Cảm biến sinh học #Cảm biến quang học #Đo lực #Đo áp suất #Khúc xạ quang học
Feasibility of 50-nm device manufacture by 157-nm optical lithography: an initial assessment
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Pong Wing Tai, A. Wong
#Optical devices #Lithography #Focusing #Optical sensors #Manufacturing processes #Image quality #Robustness #Acceleration #Integrated circuit technology #Resists
Application of shape memory alloy as detector material for far-infrared imaging transducers
- Trang 59-61
H.P. Ho, C.Y. Chung, K.C. Ng, K.L. Cheng, S.Y. Wu
#Shape memory alloys #Detectors #Transducers #Infrared imaging #Optical imaging #Thermomechanical processes #Thin film devices #Electromagnetic wave absorption #Laser transitions #Laser beams
Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off
- Trang 111-115
H.P. Ho, K.C. Lo, G.G. Siu, C. Surya
#Raman scattering #Spectroscopy #Gallium nitride #Substrates #Photonic band gap #III-V semiconductor materials #Semiconductor thin films #Silicon #Optical pulses #Absorption