High-speed mixed signal and RF circuit design with compact waffle MOSFET
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - Trang 103-106 - 2002
Tóm tắt
A compact waffle MOSFET layout scheme is used to fabricate high-speed mixed-signal circuits and RF circuits. Due to the compactness of the waffle MOSFET, it saves more than 30% of chip area. The extracted parameters indicate a 20-40% reduction in source/drain diffusion capacitance and gate resistance. This reduction results in more than 10% improvement in the propagation delay of buffer circuits and an increase in the unity-gain frequency and phase margin of a high-speed two-stage operational amplifier. An active inductor designed with compact waffle MOSFET also gets higher Q value.
Từ khóa
#RF signals #Radio frequency #Circuit synthesis #MOSFET circuits #Capacitance #FETs #Operational amplifiers #Radiofrequency amplifiers #Active inductors #CMOS technologyTài liệu tham khảo
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