Numerical study of one-fold coordinated oxygen atom in silicon gate oxideProceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 39-42
V.A. Gritsenko, A. Shaposhnikov, Yu.N. Novikov, A.P. Baraban, Hei Wong, G.M. Zhidomirov, M. Roger
#Oxygen #Silicon #Electron traps #Charge carrier processes #Dielectric substrates #Luminescence #Physics #Hydrogen #Oxidation #Dielectric devices
Characteristics of high quality hafnium oxide gate dielectricProceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 43-46
N. Zhan, K.L. Ng, M.C. Poon, C.W. Kok, M. Chan, H. Wong
#Hafnium oxide #Dielectric substrates #Rapid thermal annealing #Leakage current #Bonding #Sputtering #Temperature #High K dielectric materials #Capacitors #Chemicals