Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)
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Enhanced reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 35-38
Polysilicon thin-film transistors (poly-Si TFTs) fabricated solely by low-temperature processes (under 600/spl deg/C) are treated with nitridation using NO plasma. Their properties are investigated at room temperature under high-field stress. It is found that the plasma is effective in improving the gate-oxide hardness against stress-induced damage, with the nitrided device showing a smaller shift...... hiện toàn bộ
#Dielectrics #Thin film transistors #Plasma devices #Plasma temperature #Plasma properties #Stress #Plasma displays #Threshold voltage #Transconductance #Glass
The fringing electric field effect on the short-channel effect threshold voltage of FD SOI NMOS devices with LDD/sidewall oxide spacer structure
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 1-4
This paper presents the fringing electric field effect on the short-channel effect threshold voltage of fully-depleted (FD) SOI NMOS devices with the lightly-doped drain (LDD)/sidewall oxide spacer structure. It is based on a closed-form analytical model derived from the 2D Poisson's equation and using the conformal mapping technique. Based on the analytical model, as verified by the experimental ...... hiện toàn bộ
#Threshold voltage #MOS devices #Analytical models #Conformal mapping #Transistors #Electrostatics #Telephony #Poisson equations #Doping #Polynomials
Electrical characteristics of stressing for silicon oxynitride thin film
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 47-50
Capacitors using thin oxynitride films as dielectric layer were fabricated. I-V measurements and constant current stressing to the samples of oxynitride capacitors were done. C-V measurements to the samples were also carried out. By applying constant current stressing to the samples, characteristics of oxynitride samples after stressing could be observed. The stressing current to the samples could...... hiện toàn bộ
#Electric variables #Silicon #Semiconductor thin films #Dielectric thin films #Capacitors #Dielectric measurements #Nonvolatile memory #Dielectric films #Current measurement #Stress measurement
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting [front matter]
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang I-IX - 2002
Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the ori...... hiện toàn bộ
Electrical characteristics of novel hafnium oxide film
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 51-54
Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characteristics of hafnium oxide and its interface layer were studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the interface ...... hiện toàn bộ
#Electric variables #Hafnium oxide #Sputtering #Annealing #Dielectric thin films #Silicon #Dielectric substrates #Voltage #Dielectric measurements #Dielectric materials
Planar optical waveguide amplifiers
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 11-14
Progress in erbium doped waveguide devices has been significant over the past few years, and commercial products are now available. In this paper, planar rare earth doped waveguide amplifiers, including Er/sup 3+/ doped and Er/sup 3+//Yb/sup 3+/ codoped waveguide devices, for telecommunication applications are reviewed.
#Stimulated emission #Optical waveguides #Optical planar waveguides #Planar waveguides #Semiconductor optical amplifiers #Optical amplifiers #Glass #Erbium #Waveguide lasers #Optical device fabrication
Characteristics of high quality hafnium oxide gate dielectric
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 43-46
Hafnium oxide (HfO/sub 2/) was investigated as an alternative possible gate dielectric. A MOS capacitor using HfO/sub 2/ as dielectric was fabricated and studied. The HfO/sub 2/ film was formed by direct sputtering of Hf in O/sub 2/ and Ar ambient on to a Si substrate and post-sputtering rapid thermal annealing (RTA). XPS results showed that the interface layer formed between the HfO/sub 2/ and th...... hiện toàn bộ
#Hafnium oxide #Dielectric substrates #Rapid thermal annealing #Leakage current #Bonding #Sputtering #Temperature #High K dielectric materials #Capacitors #Chemicals
Application of differential phase measurement technique to surface plasmon resonance imaging sensors
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 55-58
In this paper, a differential phase imaging technique applied to optical surface plasmon resonance (SPR) sensors is presented. The technique makes use of the s-polarisation as the reference beam to interfere with the p-polarisation, of which the phase has a close relationship with the change of SPR conditions at the sensor surface. As a trial experiment, the SPR phase shift between water and air h...... hiện toàn bộ
#Phase measurement #Plasmons #Resonance #Image sensors #Optical imaging #Optical surface waves #Polarization #Optical films #Optical sensors #Absorption
Effects of Nb concentration on photo-electrical properties of Sr/sub 1-x/La/sub x/Nb/sub y/Ti/sub 1-y/O/sub 3/ thin-film resistor
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 21-25
Strontium lanthanum titanate-niobate (SrLaNb/sub x/Ti/sub 1-x/O/sub 3/) thin-film resistors are fabricated on SiO/sub 2//Si substrates by an argon ion-beam sputtering technique. Measurements show that the thin-film resistor has superior sensitivity for visible light. Moreover, the effects of Nb concentration on the photo-electrical properties of Sr/sub 1-x/La/sub x/Nb/sub y/Ti/sub 1-y/O/sub 3/ thi...... hiện toàn bộ
#Niobium #Strontium #Sputtering #Resistors #Lanthanum #Titanium compounds #Semiconductor thin films #Substrates #Argon #Transistors
Synthesis and characterization of SrTiO/sub 3/ thin films by a modified metalorganic decomposition technique
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 15-19
High quality strontium titanate thin films on platinized Si(100) have been synthesized using non-poisonous inorganic solvent and a layer-by-layer annealing technique at different temperatures. The films have shown good structural and electrical properties. The dielectric constant and dissipation factor at a frequency of 100 MHz are 230 and 0.05, respectively, for a 80 nm thick film annealed at 650...... hiện toàn bộ
#Annealing #Capacitance #Voltage #Strontium #Titanium compounds #Dielectric thin films #Solvents #Temperature #Dielectric constant #Frequency
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