Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)

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Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 111-115
H.P. Ho, K.C. Lo, G.G. Siu, C. Surya
Gallium nitride (GaN) thin films grown on sapphire substrates were successfully lifted onto silicon wafers using a laser lift-off (LLO) process induced by a 532 nm, Nd:YAG pulsed laser. Although the photon energy (2.33 eV) is much lower than the band gap of hexagonal GaN (3.41 eV), free-carriers absorption can heat up and consequently causes detachment of the GaN film from the sapphire substrate. ... hiện toàn bộ
#Raman scattering #Spectroscopy #Gallium nitride #Substrates #Photonic band gap #III-V semiconductor materials #Semiconductor thin films #Silicon #Optical pulses #Absorption
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - 2002
Presents the title page of the proceedings record.
Sensitivity improvement of the surface plasmon resonance optical sensor by using a gold-silver transducing layer
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 63-68
S.Y. Wu, H.P. Ho
It is well established that the surface plasmon resonance (SPR) optical sensor based on a metal-dielectric configuration can provide high sensitivity for many applications such as chemical and biological sensing. In fact the gold-dielectric configuration is most commonly used in the SPR sensor because of the fact that the thin gold layer can provide stable performance and good chemical resistance.... hiện toàn bộ
#Plasmons #Resonance #Optical sensors #Chemical and biological sensors #Sensor phenomena and characterization #Biosensors #Gold #Chemical sensors #Immune system #Silver
Optical storage disc based on the frequency up-conversion effect from rare earth ions
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 117-120
Ho-Pui Ho, Wing-Wai Wong, Shu-Yuen Wu, E.E.Y. Pun
The application of infrared-to-visible upconversion in rare earth (Ho/sup 3+//Yb/sup 3+/) co-doped TeO/sub x/ sol-gel thin film for optical storage has been investigated. Optical discs with the storage layer made from rare-earth co-doped TeO/sub x/ sol-gel thin films have been studied in terms of minimum bit-size and up-conversion efficiency. The possibility of a multi-layered architecture has als... hiện toàn bộ
#Particle beam optics #Frequency #Optical films #Optical scattering #Optical crosstalk #Biomedical optical imaging #Optical sensors #Optical recording #Optical materials #Phonons
The gate misalignment effects of the sub-threshold characteristics of sub-100 nm DG-MOSFETs
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 91-94 - 2002
Hiu Yung Wong, Kyoungsub Shin, Mansun Chan
In this paper, simulation results of the gate misalignment effects on the sub-threshold characteristics of asymmetric (ADG) and symmetric (SDG) double-gate MOSFET (DG-MOSFET) in the sub-100 nm regime are presented. Gates alignment in DG-MOSFETs becomes more and more difficult as devices are scaling down in non-self-aligned double-gate processes. The results show that gate misalignment effects are ... hiện toàn bộ
#Fabrication #MOSFET circuits #Medical simulation #Threshold voltage #Inorganic materials #Computational modeling #Computer simulation #Costs #Protection #Dielectric constant
Numerical study of one-fold coordinated oxygen atom in silicon gate oxide
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 39-42
V.A. Gritsenko, A. Shaposhnikov, Yu.N. Novikov, A.P. Baraban, Hei Wong, G.M. Zhidomirov, M. Roger
The capturing properties of nonbridging oxygen hole centers with unpaired electrons /spl equiv/SiO/spl middot/ and hydrogen defects /spl equiv/SiOH in silicon oxide have been studied using the ab initio density-functional method. It was found that the /spl equiv/SiO/spl middot/ defect is an electron trap and should be the responsible candidate for better hardness against radiation for the metal-ox... hiện toàn bộ
#Oxygen #Silicon #Electron traps #Charge carrier processes #Dielectric substrates #Luminescence #Physics #Hydrogen #Oxidation #Dielectric devices
Synthesis and characterization of SrTiO/sub 3/ thin films by a modified metalorganic decomposition technique
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 15-19
T.B. Ng, J.B. Xu, G.D. Hu, W.Y. Cheung, N. Ke, I.H. Wilson
High quality strontium titanate thin films on platinized Si(100) have been synthesized using non-poisonous inorganic solvent and a layer-by-layer annealing technique at different temperatures. The films have shown good structural and electrical properties. The dielectric constant and dissipation factor at a frequency of 100 MHz are 230 and 0.05, respectively, for a 80 nm thick film annealed at 650... hiện toàn bộ
#Annealing #Capacitance #Voltage #Strontium #Titanium compounds #Dielectric thin films #Solvents #Temperature #Dielectric constant #Frequency
Characteristics of high quality hafnium oxide gate dielectric
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 43-46
N. Zhan, K.L. Ng, M.C. Poon, C.W. Kok, M. Chan, H. Wong
Hafnium oxide (HfO/sub 2/) was investigated as an alternative possible gate dielectric. A MOS capacitor using HfO/sub 2/ as dielectric was fabricated and studied. The HfO/sub 2/ film was formed by direct sputtering of Hf in O/sub 2/ and Ar ambient on to a Si substrate and post-sputtering rapid thermal annealing (RTA). XPS results showed that the interface layer formed between the HfO/sub 2/ and th... hiện toàn bộ
#Hafnium oxide #Dielectric substrates #Rapid thermal annealing #Leakage current #Bonding #Sputtering #Temperature #High K dielectric materials #Capacitors #Chemicals
The fringing electric field effect on the short-channel effect threshold voltage of FD SOI NMOS devices with LDD/sidewall oxide spacer structure
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 1-4
J.B. Kuo, Shih-Chia Lin
This paper presents the fringing electric field effect on the short-channel effect threshold voltage of fully-depleted (FD) SOI NMOS devices with the lightly-doped drain (LDD)/sidewall oxide spacer structure. It is based on a closed-form analytical model derived from the 2D Poisson's equation and using the conformal mapping technique. Based on the analytical model, as verified by the experimental ... hiện toàn bộ
#Threshold voltage #MOS devices #Analytical models #Conformal mapping #Transistors #Electrostatics #Telephony #Poisson equations #Doping #Polynomials
A study on theoretical representation of intermodulation in CMOS balanced mixers
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - - Trang 107-110
Jun Wang, A.K.K. Wong
Intermodulation of CMOS balanced mixers is analyzed in this paper with the aim of reducing the effects of intermodulation distortion into a set of simple equations. The analysis consists of a theoretical study and simulation results. Analysis and simulations results reveal that the mechanism of intermodulation in balanced mixers is too complex to be represented by simple equations. Numerical metho... hiện toàn bộ
#Switches #Transceivers #Dynamic range #Circuits #Equations #Image converters #Intermodulation distortion #Analytical models #Radio frequency #Baseband
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