Synthesis and characterization of SrTiO/sub 3/ thin films by a modified metalorganic decomposition technique

High quality strontium titanate thin films on platinized Si(100) have been synthesized using non-poisonous inorganic solvent and a layer-by-layer annealing technique at different temperatures. The films have shown good structural and electrical properties. The dielectric constant and dissipation factor at a frequency of 100 MHz are 230 and 0.05, respectively, for a 80 nm thick film annealed at 650/spl deg/C. The capacitance versus applied voltage characteristic shows that the capacitance is almost independent of the applied voltage. The leakage current density is found to be in the order of 10/sup -7/ A/cm/sup 2/ for the film in an applied electric field of about 100 kV/cm.