The fringing electric field effect on the short-channel effect threshold voltage of FD SOI NMOS devices with LDD/sidewall oxide spacer structure
Tóm tắt
This paper presents the fringing electric field effect on the short-channel effect threshold voltage of fully-depleted (FD) SOI NMOS devices with the lightly-doped drain (LDD)/sidewall oxide spacer structure. It is based on a closed-form analytical model derived from the 2D Poisson's equation and using the conformal mapping technique. Based on the analytical model, as verified by the experimental data and the 2D simulation results, with a lower n-LDD doping density, the fringing electric field effect in the sidewall oxide spacer lowers the short-channel effect.
Từ khóa
#Threshold voltage #MOS devices #Analytical models #Conformal mapping #Transistors #Electrostatics #Telephony #Poisson equations #Doping #PolynomialsTài liệu tham khảo
senddon, 1972, The Use of Integral Transforms
10.1109/16.293351
chen, 1992, A High Speed SOI Technology with 12ps/18ps Gate Delay Operating at 5V/1.5V, IEDM Dig, 35
kuo, 2001, Low-Voltage SOI CMOS VLSI Devices and Circuits