High-temperature quasi-saturation model of high-voltage DMOS power devices
Tóm tắt
This paper reports the analysis of the high-temperature (300 K-400 K) quasi-saturation behavior of high-voltage DMOS devices using a closed-form quasi-saturation model. Based on the analytical model, at the higher temperature, the quasi-saturation behavior occurs at a smaller gate voltage due to the smaller saturated velocity as verified by the MEDICI results.
Từ khóa
#Electrons #Temperature dependence #Threshold voltage #Region 2 #Telephony #Analytical models #Medical simulation #Temperature distribution #Region 3Tài liệu tham khảo
10.1109/16.127492
10.1109/16.231569
sancez, 1985, Quasi-saturation effect in highvoltage VDMOS transistors, IEEE Proceedings, 132