Enhanced reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation
Tóm tắt
Polysilicon thin-film transistors (poly-Si TFTs) fabricated solely by low-temperature processes (under 600/spl deg/C) are treated with nitridation using NO plasma. Their properties are investigated at room temperature under high-field stress. It is found that the plasma is effective in improving the gate-oxide hardness against stress-induced damage, with the nitrided device showing a smaller shift in threshold voltage, a smaller decrease in peak transconductance and a smaller increase in subthreshold slope after the stress. This result shows that plasma nitridation has positive effects on the reliability of low-temperature-fabricated poly-Si TFTs, which play an important role nowadays in low-cost flat-panel display systems on glass.
Từ khóa
#Dielectrics #Thin film transistors #Plasma devices #Plasma temperature #Plasma properties #Stress #Plasma displays #Threshold voltage #Transconductance #GlassTài liệu tham khảo
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