Modeling of FinFET: 3D MC Simulation Using FMM and Unintentional Doping Effects on Device OperationSpringer Science and Business Media LLC - Tập 3 - Trang 337-340 - 2004
Hasanur R. Khan, Dragica Vasileska, S. S. Ahmed, C. Ringhofer, Clemens Heitzinger
Novel device concepts such as dual gate SOI, Ultra thin body SOI, FinFETs, etc., have emerged as a solution to the ultimate scaling limits of conventional bulk MOSFETs. These novel devices suppress some of the Short Channel Effects (SCE) efficiently, but at the same time more physics based modeling is required to investigate device operation. In this paper, we use semi-classical 3D Monte Carlo dev...... hiện toàn bộ
A quantum kinetic approach for calculating low-field mobility in black phosphorus crystals and multilayer phosphoreneSpringer Science and Business Media LLC - Tập 17 - Trang 1549-1556 - 2018
K. L. Kovalenko, S. I. Kozlovskiy, N. N. Sharan
Analytic expressions for the low-field mobility have been obtained in black phosphorus crystals and multilayer phosphorene. Acoustic and optical phonons, charged impurities and surface roughness are adopted as the scattering system. Theoretical considerations are based on a quantum kinetic equation and special form of the non-equilibrium distribution function (shifted Fermi distribution). Our calc...... hiện toàn bộ
Fano Resonance Through Quantum Dots in Tunable Aharonov-Bohm RingsSpringer Science and Business Media LLC - Tập 4 - Trang 129-133 - 2005
Y. S. Joe, J. S Kim, E. R. Hedin, R. M. Cosby, A. M. Satanin
Stimulated by recent intriguing experiments with a quantum dot in an Aharonov-Bohm (AB) ring, we investigate novel resonant phenomena by studying the total transmission probability of nanoscale AB rings with an embedded scattering center in one arm and a magnetic flux passing through its center. In the AB ring with double coupled-quantum dots (QDs), we show that the overlapping of Fano resonances ...... hiện toàn bộ
TCAD simulation and modeling of impact ionization (II) enhanced thin film c-Si solar cellsSpringer Science and Business Media LLC - Tập 15 - Trang 248-259 - 2015
Vikas Kumar, Ammar Nayfeh
This study investigates the performance of impact ionization (II) enhanced thin film c-Si solar cells using Technology Computer Aided Design simulation. 2-D numerical simulation is carried out to study the effect of II concerning the electrical and optical properties of the c-Si solar cell. We have introduced
$$\hbox {P}...... hiện toàn bộ
Mô phỏng vận chuyển cổ điển và cơ học lượng tử trong các giọt lượng tử mở Dịch bởi AI Springer Science and Business Media LLC - Tập 6 - Trang 93-96 - 2006
Roland Brunner, Ronald Meisels, Friedemar Kuchar, Richard Akis, David K. Ferry, Jonathan P. Bird
Các mô phỏng về các mảng giọt lượng tử mở được thực hiện, trong đó chuyển động của electron được xem xét trong một thế năng điều hòa và trong một trường điện từ tĩnh. Kết quả bao gồm quỹ đạo của electron và các mặt cắt Poincaré từ tính toán cổ điển. Phân tích các mặt cắt Poincaré cho thấy ảnh hưởng mạnh mẽ của độ dài của điểm hẹp đến các vùng hỗn loạn trong không gian pha. Xác suất mật độ từ các t...... hiện toàn bộ
#mô phỏng #giọt lượng tử #chuyển động electron #trường điện từ #mặt cắt Poincaré #không gian pha #xác suất mật độ
Stochastic circuit breaker network model for bipolar resistance switching memoriesSpringer Science and Business Media LLC - Tập 16 - Trang 1154-1166 - 2017
S. Brivio, S. Spiga
We present a stochastic model for resistance switching devices in which a square grid of resistor breakers plays the role of the insulator switching layer. The probability of breaker switching between two fixed resistance values,
$$R_\mathrm{OFF}$$
...... hiện toàn bộ
Reconfigurable silicon nanotube using numerical simulationsSpringer Science and Business Media LLC - - 2020
A. Nisha Justeena, R. Ambika, P. S. S. K. P. Sadagopan, R. Srinivasan
Device reconfigurability refers to the ability to choose N or P type for the same structure. Such reconfigurable operation is demonstrated herein for a silicon nanotube (SiNT) structure using three-dimensional (3D) technology computer-aided design (TCAD) numerical simulations. The reconfigurable field-effect transistor (RFET) can exhibit N- or P-type operation via the application of an appropriate...... hiện toàn bộ
Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistorsSpringer Science and Business Media LLC - Tập 16 - Trang 696-703 - 2017
Chun-Hsing Shih, Nguyen Dang Chien
The onset behavior of output characteristics in tunnel field-effect transistors (TFETs) importantly determines the performance of digital TFET-based circuits. In this paper, we analytically and numerically examine the dependence of the onset behavior of output characteristics on the bandgap of semiconductors in line-tunneling TFETs. The qualitative and quantitative analyses show that the output on...... hiện toàn bộ
On a simple and accurate quantum correction for Monte Carlo simulationSpringer Science and Business Media LLC - Tập 5 - Trang 467-469 - 2006
F. M. Bufler, R. Hudé, A. Erlebach
We investigate a quantum-correction method for Monte Carlo device simulation. The method consists of reproducing quantum mechanical density-gradient simulation by classical drift-diffusion simulation with modified effective oxide thickness and work function and using these modifications subsequently in Monte Carlo simulation. This approach is found to be highly accurate and can be used fully autom...... hiện toàn bộ