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Negative VCC in MIM capacitors: modeling and experiments
Springer Science and Business Media LLC - Tập 17 - Trang 458-462 - 2017
Aparna Sanal, P. Sathyanarayanan, V. Velmurugan, D. Kannadassan
After the advent of Cu and TiN metallization in high-speed and high-density radio frequency and analog/mixed-signal integrated circuits, new challenges have emerged in achieving low voltage coefficient of capacitance (VCC) in metal-insulation-metal capacitor (MIM) technology. While single layer high-k dielectric MIM capacitors fail to provide low VCC ( ...... hiện toàn bộ
Correction: Resistance saturation in semi-conducting polyacetylene molecular wires
Springer Science and Business Media LLC - - Trang 1-1 - 2023
Angelo Valli, Jan M. Tomczak
Binary optimization of metallic nano-tube-based absorption coefficient
Springer Science and Business Media LLC - Tập 14 - Trang 486-491 - 2015
Majid Akhlaghi, Hosein Shahmirzaee, Mohammad Hosain Enjavi
A new efficient binary optimization method being established on teaching-learning-based optimization (TLBO) algorithm was used to design an array of plasmonic nano-tubes to increase maximum absorption coefficient spectrum. Binary TLBO (BTLBO), a bunch of learners including a matrix with binary entries responsible for controlling nano-tubes in the array, shows the presence with symbol of (‘1’) and ...... hiện toàn bộ
Monte Carlo study of carrier transport in two-dimensional transition metal dichalcogenides: high-field characteristics and MOSFET simulation
Springer Science and Business Media LLC - Tập 22 - Trang 1240-1256 - 2023
Sanjay Gopalan, Shoaib Mansoori, Maarten Van de Put, Gautam Gaddemane, Massimo Fischetti
Field-effect transistors (FETs) having two-dimensional (2D) materials as the channel offer superior gate control and decreased short-channel effects when compared to bulk-semiconductor channels. Here, employing ab initio band structure and scattering rates as input to Monte Carlo simulations, we investigate the electron-transport characteristics in monolayer MoS2 and WSe2 at high fields and simula...... hiện toàn bộ
Applicability of Quasi-3D and 3D MOSFET Simulations in the ‘Atomistic’ Regime
Springer Science and Business Media LLC - Tập 2 - Trang 423-426 - 2003
S. Roy, A. Lee, A.R. Brown, A. Asenov
The importance of intrinsic fluctuations to the next generation of CMOS circuits has renewed interest in simplified, computationally inexpensive routes to the analysis of circuit parameters such as threshold voltage and subthreshold slope in ensembles of devices. A quasi-3D analytic approach to the statistical analysis of these parameters in 100 × 100 nm, 70 × 70 nm and 35 × 35 nm devices has been...... hiện toàn bộ
Modeling of FinFET: 3D MC Simulation Using FMM and Unintentional Doping Effects on Device Operation
Springer Science and Business Media LLC - Tập 3 - Trang 337-340 - 2004
Hasanur R. Khan, Dragica Vasileska, S. S. Ahmed, C. Ringhofer, Clemens Heitzinger
Novel device concepts such as dual gate SOI, Ultra thin body SOI, FinFETs, etc., have emerged as a solution to the ultimate scaling limits of conventional bulk MOSFETs. These novel devices suppress some of the Short Channel Effects (SCE) efficiently, but at the same time more physics based modeling is required to investigate device operation. In this paper, we use semi-classical 3D Monte Carlo dev...... hiện toàn bộ
A quantum kinetic approach for calculating low-field mobility in black phosphorus crystals and multilayer phosphorene
Springer Science and Business Media LLC - Tập 17 - Trang 1549-1556 - 2018
K. L. Kovalenko, S. I. Kozlovskiy, N. N. Sharan
Analytic expressions for the low-field mobility have been obtained in black phosphorus crystals and multilayer phosphorene. Acoustic and optical phonons, charged impurities and surface roughness are adopted as the scattering system. Theoretical considerations are based on a quantum kinetic equation and special form of the non-equilibrium distribution function (shifted Fermi distribution). Our calc...... hiện toàn bộ
Fano Resonance Through Quantum Dots in Tunable Aharonov-Bohm Rings
Springer Science and Business Media LLC - Tập 4 - Trang 129-133 - 2005
Y. S. Joe, J. S Kim, E. R. Hedin, R. M. Cosby, A. M. Satanin
Stimulated by recent intriguing experiments with a quantum dot in an Aharonov-Bohm (AB) ring, we investigate novel resonant phenomena by studying the total transmission probability of nanoscale AB rings with an embedded scattering center in one arm and a magnetic flux passing through its center. In the AB ring with double coupled-quantum dots (QDs), we show that the overlapping of Fano resonances ...... hiện toàn bộ
Modified differential overlap factor and modal gain equalization criteria-based comparative analysis of 4M-EDFA 980;1480 nm towards identification of a unique erbium doping profile for the 4M-EDFA1480 nm system
Springer Science and Business Media LLC - Tập 22 - Trang 648-668 - 2023
Suhail K. Naik, Gausia Qazi
A four-mode erbium-doped fiber amplifier (4M-EDFA) system with $${\mathrm{LP}}_{01;980 \mathrm{nm}}$$ and $${\mathrm{LP}}_{01;1480 \mathrm{nm}}$$ pump wavelengths is explored analytically using a...... hiện toàn bộ
So sánh MOSFET hai cổng và FinFET bằng mô phỏng Monte Carlo Dịch bởi AI
Springer Science and Business Media LLC - Tập 2 - Trang 85-89 - 2003
Gulzar A. Kathawala, Mohamed Mohamed, Umberto Ravaioli
Một mô phỏng Monte Carlo toàn băng đã được sử dụng để phân tích và so sánh hiệu suất của MOSFET hai cổng n và FinFET. Các hiệu ứng định lượng kích thước đã được tính đến bằng cách sử dụng một sự điều chỉnh lượng tử dựa trên phương trình Schrödinger. FinFET là một biến thể của các thiết bị hai cổng điển hình với cổng bao quanh kênh ở ba mặt. Từ các mô phỏng của chúng tôi, chúng tôi nhận thấy rằng c...... hiện toàn bộ
#MOSFET hai cổng #FinFET #mô phỏng Monte Carlo #hiệu ứng định lượng kích thước #điều chỉnh lượng tử
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