Springer Science and Business Media LLC
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Comparative study of multi-physics generated small dipoles in conducting media
Springer Science and Business Media LLC - Tập 22 - Trang 1576-1586 - 2023
In this paper we present the results of a study of electronically and mechanically generated transverse magnetic (TM) and transverse electric (TE) dipoles in a lossy environment, so that antenna design guidelines may be established at the system level. At far-zone, the ratio
$$|\frac{E}{H}|:= \eta _0$$
...... hiện toàn bộ
An analytical model for the surface potential and threshold voltage of a double-gate heterojunction tunnel FinFET
Springer Science and Business Media LLC - - 2019
A Computational Model of NBTI and Hot Carrier Injection Time-Exponents for MOSFET Reliability
Springer Science and Business Media LLC - Tập 3 - Trang 165-169 - 2004
Theories of interface trap generation in Negative Bias Temperature Instability (NBTI) and Hot Carrier Injection (HCI) mechanisms are unified under the geometric interpretation and computational modeling of Reaction-Diffusion (R-D) theoryframework. Analytical derivations that predict the degradation are shown, simulation methodology is explained and numerical solutions are obtained. Time-exponents ...... hiện toàn bộ
Convergence of density functional iterative procedures with a Newton-Raphson algorithm
Springer Science and Business Media LLC - Tập 6 - Trang 349-352 - 2007
State of the art first-principles calculations of electronic structures aim at finding the ground state electronic density distribution. The performance of such methodologies is determined by the effectiveness of the iterative solution of the nonlinear density functional Kohn-Sham equations. We first outline a solution strategy based on the Newton-Raphson method. A form of the algorithm is then ap...... hiện toàn bộ
Attenuation constant and characteristic impedance calculation of top metal-covered CPW transmission line using neural networks
Springer Science and Business Media LLC - Tập 18 - Trang 1342-1346 - 2019
A technique for calculating the characteristic impedance of top metal-covered coplanar waveguide (TCPW) transmission lines using a neural network is presented in this paper. Additionally, the technique is extended to calculate their attenuation constant. Analytical expressions based on conformal mapping techniques are not applicable when the top cover height is < 3 µm. Further, there are no analy...... hiện toàn bộ
Adaptation of a compact SPICE level 3 model for oxide thin-film transistors
Springer Science and Business Media LLC - Tập 18 - Trang 1037-1044 - 2019
Oxide thin-film transistors (TFTs) and metal–oxide–semiconductor field-effect transistors (MOSFETs) operate via different conduction mechanisms but exhibit similar device characteristics. In this work, a SPICE level 3 model originally defined for MOSFETs is successfully adapted to provide a behavioral model for oxide TFTs. This adapted compact model is applicable to all kinds of oxide TFTs, irresp...... hiện toàn bộ
Semiclassical electron and phonon transport from first principles: application to layered thermoelectrics
Springer Science and Business Media LLC - Tập 22 - Trang 1281-1309 - 2023
Thermoelectrics are a promising class of materials for renewable energy owing to their capability to generate electricity from waste heat, with their performance being governed by a competition between charge and thermal transport. A detailed understanding of energy transport at the nanoscale is thus of paramount importance for developing efficient thermoelectrics. Here, we provide a comprehensive...... hiện toàn bộ
Self-consistent treatment of quantum transport in 10 nm FinFET using Contact Block Reduction (CBR) method
Springer Science and Business Media LLC - Tập 6 - Trang 77-80 - 2006
A fully quantum mechanical approach must be utilized to investigate the characteristics of nanoscale semiconductor devices and capture the essential physics with high accuracy. In this work a very efficient quantum mechanical transport simulator based on Contact Block Reduction (CBR) method is used to analyze the behavior of 10 nm FinFET device in the quasi-ballistic regime of operation. Simulatio...... hiện toàn bộ
Accurate power MOSFET models including quasi-saturation effect
Springer Science and Business Media LLC - Tập 15 Số 2 - Trang 619-626 - 2016
Variable thermal resistance model of GaN-on-SiC with substrate scalability
Springer Science and Business Media LLC - Tập 19 - Trang 1546-1554 - 2020
A drain current model for an AlGaN/GaN high-electron-mobility transistor (HEMT) with variable thermal resistance is developed. For the first time, a variable thermal resistance in terms of the substrate thickness
$$(t_{\text{SiC}} )$$
is included rather than a constant thermal resistance. One of the distinguishing features of this model is that it is scalable with substrate thickness. The compa...... hiện toàn bộ
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