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Modeling of FinFET: 3D MC Simulation Using FMM and Unintentional Doping Effects on Device Operation
Springer Science and Business Media LLC - Tập 3 - Trang 337-340 - 2004
Hasanur R. Khan, Dragica Vasileska, S. S. Ahmed, C. Ringhofer, Clemens Heitzinger
Novel device concepts such as dual gate SOI, Ultra thin body SOI, FinFETs, etc., have emerged as a solution to the ultimate scaling limits of conventional bulk MOSFETs. These novel devices suppress some of the Short Channel Effects (SCE) efficiently, but at the same time more physics based modeling is required to investigate device operation. In this paper, we use semi-classical 3D Monte Carlo dev...... hiện toàn bộ
Fano Resonance Through Quantum Dots in Tunable Aharonov-Bohm Rings
Springer Science and Business Media LLC - Tập 4 - Trang 129-133 - 2005
Y. S. Joe, J. S Kim, E. R. Hedin, R. M. Cosby, A. M. Satanin
Stimulated by recent intriguing experiments with a quantum dot in an Aharonov-Bohm (AB) ring, we investigate novel resonant phenomena by studying the total transmission probability of nanoscale AB rings with an embedded scattering center in one arm and a magnetic flux passing through its center. In the AB ring with double coupled-quantum dots (QDs), we show that the overlapping of Fano resonances ...... hiện toàn bộ
Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors
Springer Science and Business Media LLC - Tập 16 - Trang 696-703 - 2017
Chun-Hsing Shih, Nguyen Dang Chien
The onset behavior of output characteristics in tunnel field-effect transistors (TFETs) importantly determines the performance of digital TFET-based circuits. In this paper, we analytically and numerically examine the dependence of the onset behavior of output characteristics on the bandgap of semiconductors in line-tunneling TFETs. The qualitative and quantitative analyses show that the output on...... hiện toàn bộ
Gate-induced carrier density modulation in bulk graphene: theories and electrostatic simulation using Matlab pdetool
Springer Science and Business Media LLC - Tập 12 Số 2 - Trang 188-202 - 2013
Ming‐Hao Liu
On a simple and accurate quantum correction for Monte Carlo simulation
Springer Science and Business Media LLC - Tập 5 - Trang 467-469 - 2006
F. M. Bufler, R. Hudé, A. Erlebach
We investigate a quantum-correction method for Monte Carlo device simulation. The method consists of reproducing quantum mechanical density-gradient simulation by classical drift-diffusion simulation with modified effective oxide thickness and work function and using these modifications subsequently in Monte Carlo simulation. This approach is found to be highly accurate and can be used fully autom...... hiện toàn bộ
Analysis of field-driven clocking for molecular quantum-dot cellular automata based circuits
Springer Science and Business Media LLC - - 2010
Faizal Karim, Konrad Walus, A. Ivanov
Characteristics of GaAs/GaSb tunnel field-effect transistors without doping junctions: numerical studies
Springer Science and Business Media LLC - - 2018
Mahdi Vadizadeh
Recent developments in tight-binding approaches for nanowires
Springer Science and Business Media LLC - Tập 8 - Trang 142-152 - 2009
Timothy B. Boykin
Full-band nanowire simulations pose significant computational challenges. Nanowires and nanostructures in general have many interfaces, may be composed of alloys, and feature confinement on a scale of a few tens of nanometers. The empirical tight-binding approach is well-suited for modeling these devices: Its basis consists of atomic-like orbitals with limited-range interactions and reasonably-siz...... hiện toàn bộ
Simulation of avalanche time in thin GaN/4H–SiC heterojunction avalanche photodiodes
Springer Science and Business Media LLC - - 2024
P. L. Cheang, A. H. You, Y. L. Yap, C. C. Sun
A random ionization-time model is introduced to compute the avalanche time of double carrier multiplication in heterojunction avalanche photodiodes (APDs). The Monte Carlo method is employed to determine the distribution of carriers for both electron- and hole- initiated multiplications in the GaN/4H–SiC heterojunction APDs of multiplication widths, w = 0.1 and 0.2 μm, incorporating of dead space ...... hiện toàn bộ
On the electronic and transport properties of semiconducting carbon nanotubes: the role of $$\hbox {sp}^3$$ -defects
Springer Science and Business Media LLC - Tập 17 - Trang 521-530 - 2018
D. Teich, M. Claus, G. Seifert
The effect of $$\hbox {sp}^3$$ -defects on the electronic and transport properties of semiconducting carbon nanotubes has been systematically studied on the basis of a quantum mechanical tight-binding model. We have calculated the band structure f...... hiện toàn bộ
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