Modeling of FinFET: 3D MC Simulation Using FMM and Unintentional Doping Effects on Device Operation
Tóm tắt
Novel device concepts such as dual gate SOI, Ultra thin body SOI, FinFETs, etc., have emerged as a solution to the ultimate scaling limits of conventional bulk MOSFETs. These novel devices suppress some of the Short Channel Effects (SCE) efficiently, but at the same time more physics based modeling is required to investigate device operation. In this paper, we use semi-classical 3D Monte Carlo device simulator to investigate important issues in the operation of FinFETs. Fast Multipole Method (FMM) has been integrated with the EMC scheme to replace the time consuming Poisson equation solver. Effect of unintentional doping for different device dimensions has been investigated. Impurities at the source side of the channel have most significant impact on the device performance.
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