Silicon nitride cantilevers with oxidation-sharpened silicon tips for atomic force microscopyJournal of Microelectromechanical Systems - Tập 11 Số 4 - Trang 317-321 - 2002
R.J. Grow, S.C. Minne, S.R. Manalis, C.F. Quate
High-resolution atomic force microscopy (AFM) of soft or fragile samples
requires a cantilever with a low spring constant and a sharp tip. We have
developed a novel process for making such cantilevers from silicon nitride with
oxidation-sharpened silicon tips. First, we made and sharpened silicon tips on a
silicon wafer. Next, we deposited a thin film of silicon nitride over the tips
and etched it... hiện toàn bộ
#Silicon #Atomic force microscopy #Springs #Etching #High-resolution imaging #Semiconductor thin films #Sputtering #Substrates #Scanning electron microscopy #Noise measurement
Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperaturesJournal of Microelectromechanical Systems - Tập 11 Số 4 - Trang 385-401 - 2002
M.J. de Boer, J.G.E. Gardeniers, H.V. Jansen, E. Smulders, M.-J. Gilde, G. Roelofs, J.N. Sasserath, M. Elwenspoek
This paper presents guidelines for the deep reactive ion etching (DRIE) of
silicon MEMS structures, employing SF/sub 6//O/sub 2/-based high-density plasmas
at cryogenic temperatures. Procedures of how to tune the equipment for optimal
results with respect to etch rate and profile control are described. Profile
control is a delicate balance between the respective etching and deposition
rates of a S... hiện toàn bộ
#Plasma temperature #Guidelines #Etching #Silicon #Micromechanical devices #Plasma applications #Cryogenics #Kinetic energy #Optimal control #Passivation
Direct silicon-silicon bonding by electromagnetic induction heatingJournal of Microelectromechanical Systems - Tập 11 Số 4 - Trang 285-292 - 2002
K. Thompson, Y.B. Gianchandani, J. Booske, R.F. Cooper
A novel heating technique, electromagnetic induction heating (EMIH), uses
electromagnetic radiation, ranging in frequency from a few megahertz to tens of
gigahertz, to volumetrically heat silicon above 1000/spl deg/C in only a few
seconds. Typical power requirements fall between 900 to 1300 W for silicon
wafers 75 to 100 mm in diameter. This technique has successfully produced direct
silicon wafer... hiện toàn bộ
#Electromagnetic induction #Electromagnetic heating #Electromagnetic radiation #Wafer bonding #Temperature #Frequency #Silicon on insulator technology #Manufacturing #Bonding processes #Furnaces
Deformation and structural stability of layered plate microstructures subjected to thermal loadingJournal of Microelectromechanical Systems - Tập 11 Số 4 - Trang 372-384 - 2002
M.L. Dunn, Y. Zhang, V.M. Bright
We study the deformation and stability of gold-polysilicon MEMS plate
microstructures fabricated by the MUMPS surface micromachining process and
subjected to uniform temperature changes. We measured, using an interferometric
microscope, full-field deformed shapes of a series of square and circular gold
(0.5 /spl mu/m thick)/polysilicon (1.5 /spl mu/m thick) plate microstructures
with characteristi... hiện toàn bộ
#Structural engineering #Microstructure #Thermal loading #Temperature #Shape measurement #Thermoelasticity #Bifurcation #Stability #Micromechanical devices #Micromachining
Single mask, large force, and large displacement electrostatic linear inchworm motorsJournal of Microelectromechanical Systems - Tập 11 Số 4 - Trang 330-336 - 2002
R. Yeh, S. Hollar, K.S.J. Pister
We have demonstrated a family of large force and large displacement
electrostatic linear inchworm motors that operate with moderate to high
voltages. The inchworm motor design decouples actuator force from total travel
and allows the use of electrostatic gap-closing actuators to achieve large force
and large displacement while consuming low power. A typical inchworm motor
measures 3 mm /spl times/... hiện toàn bộ
#Electrostatic actuators #Energy efficiency #Micromechanical devices #Thermal force #Voltage #Piezoelectric actuators #Micromotors #Silicon on insulator technology #Electrostatic measurements #Medical services
A new in situ residual stress measurement method for a MEMS thin fixed-fixed beam structureJournal of Microelectromechanical Systems - Tập 11 Số 4 - Trang 309-316 - 2002
S. Chen, T.V. Baughn, Z.J. Yao, C.L. Goldsmith
A new method is described to measure the in situ residual stress state in a thin
fixed-fixed beam structure used in microelectromechanical systems (MEMS). The
methodology can be applied to devices at the anticipated operational and
environmental temperatures. The new technique makes use of differences in the
thermal expansion coefficient between the thin beam and the substrate. The
residual stress... hiện toàn bộ
#Residual stresses #Stress measurement #Micromechanical devices #Temperature #Radio frequency #Microelectromechanical systems #Thermal expansion #Thermal stresses #Finite element methods #Topology
Electrostatic actuation of microscale liquid-metal dropletsJournal of Microelectromechanical Systems - Tập 11 Số 4 - Trang 302-308 - 2002
L. Latorre, Joonwon Kim, Junghoon Lee, P.-P. de Guzman, H.J. Lee, P. Nouet, Chang-Jin Kim
This paper reports sliding of micro liquid-metal droplets by electrostatic
actuation for MEMS applications, bi-stable switching in particular. Basic theory
concerning droplets on a plane solid surface is exposed followed by experimental
study. Being a major parameter in the modeling of sliding droplets, the contact
angle has been characterized in the case of mercury on an oxidized silicon
wafer. T... hiện toàn bộ
#Electrostatic actuators #Optical microscopy #Finite element methods #Micromechanical devices #Solids #Semiconductor device modeling #Silicon #Optical bistability #Laser modes #Laser theory