Direct silicon-silicon bonding by electromagnetic induction heating
Tóm tắt
A novel heating technique, electromagnetic induction heating (EMIH), uses electromagnetic radiation, ranging in frequency from a few megahertz to tens of gigahertz, to volumetrically heat silicon above 1000/spl deg/C in only a few seconds. Typical power requirements fall between 900 to 1300 W for silicon wafers 75 to 100 mm in diameter. This technique has successfully produced direct silicon wafer-to-wafer bonds without the use of an intermediate glue layer. Infrared images indicate void free bonds that could not be delaminated with knife-edge tests. In addition, four pairs of stacked wafers were bonded simultaneously in 5 min, demonstrating the potential for multiwafer bonds and high-throughput batch processing.
Từ khóa
#Electromagnetic induction #Electromagnetic heating #Electromagnetic radiation #Wafer bonding #Temperature #Frequency #Silicon on insulator technology #Manufacturing #Bonding processes #FurnacesTài liệu tham khảo
10.1149/1.2113994
shen, 1995, Applied Electromagnetism, 552
jackson, 1999, Classical Electrodynamics
10.1098/rspa.1964.0248
booske, 1997, Microwave Enhanced Reaction Kinetics in Ceramics, 77
10.1103/PhysRevB.55.3559
thompson, 2000, temperature measurement in microwave-heated silicon wafers, Proc Selected Papers From the Second World Congress on Microwave Processing
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thompson, 2001, si–si bonding using rf and microwave radiation, Tech Dig IEEE International Conference on Solid-State Sensors and Actuators (Transducers 01)
thompson, 2001, rf and microwave annealing for ultra-shallow junction formation, 199th Meeting of the Electrochemical Society
budraa, 1999, microwave induced direct bonding of single crystal silicon wafers, Proc 12th IEEE International Conference on Micro Electro Mechanical Systems, 490
10.1109/MEMSYS.1999.746877
tong, 1999, Semiconductor Wafer Bonding
schmidt, 1994, silicon wafer bonding for micromechanical devices, Proc IEEE Solid‐ State Sensor and Actuator Workshop, 127
balanis, 1989, Advanced Engineering Electromagnetics