Applied Physics Letters

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Multiwalled carbon nanotube/polydimethylsiloxane composite films as high performance flexible electric heating elements
Applied Physics Letters - Tập 105 Số 5 - 2014
Jing Yan, Young Gyu Jeong
High performance elastomeric electric heating elements were prepared by incorporating various contents of pristine multiwalled carbon nanotube (MWCNT) in polydimethylsiloxane (PDMS) matrix by using an efficient solution-casting and curing technique. The pristine MWCNTs were identified to be uniformly dispersed in the PDMS matrix and the electrical percolation of MWCNTs was evaluated to be ...... hiện toàn bộ
Nonwetting of impinging droplets on textured surfaces
Applied Physics Letters - Tập 94 Số 13 - 2009
Tao Deng, Kripa K. Varanasi, Ming F. Hsu, Nitin Bhate, Chris Keimel, Judith A. Stein, Margaret L. Blohm
This paper studies the impinging droplets on superhydrophobic textured surfaces and proposes a design guideline for nonwetting surfaces under droplet impingement. A new wetting pressure, the effective water hammer pressure, is introduced in the study to clearly define wetting states for the impinging droplets. This approach establishes the design criteria for nonwetting surfaces to impingi...... hiện toàn bộ
Abnormal positive bias stress instability of In–Ga–Zn–O thin-film transistors with low-temperature Al2O3 gate dielectric
Applied Physics Letters - Tập 108 Số 3 - 2016
Yu-Hong Chang, Ming-Jiue Yu, Ruei-Ping Lin, Chih-Pin Hsu, Tuo‐Hung Hou
Low-temperature atomic layer deposition (ALD) was employed to deposit Al2O3 as a gate dielectric in amorphous In–Ga–Zn–O thin-film transistors fabricated at temperatures below 120 °C. The devices exhibited a negligible threshold voltage shift (ΔVT) during negative bias stress, but a more pronounced ΔVT under positive bias stress with a characteristic turnaround behavior from a positive ΔVT...... hiện toàn bộ
Increased optical damage resistance in lithium niobate
Applied Physics Letters - Tập 44 Số 9 - Trang 847-849 - 1984
D. A. Bryan, Robert Gerson, H. E. Tomaschke
We have confirmed greatly improved resistance to photorefractive damage in compositions of lithium niobate containing 4.5 at. % MgO or more. Holographic diffraction measurements of photorefraction demonstrated that the improved performance is due to a hundredfold increase in the photoconductivity, rather than a decrease in the Glass current. The diffraction efficiency shows an Arrhenius de...... hiện toàn bộ
Origin of magnetic anisotropy and spiral spin order in multiferroic BiFeO3
Applied Physics Letters - Tập 100 Số 24 - Trang 242413 - 2012
Junting Zhang, Xiaomei Lü, Jian Zhou, Hongbo Sun, Jie Su, Changcheng Ju, Fengzhen Huang, Jinsong Zhu
Resistive switching memory effect of ZrO2 films with Zr+ implanted
Applied Physics Letters - Tập 92 Số 1 - 2008
Qi Liu, Weihua Guan, Shibing Long, Rui Jia, Ming Liu, Junning Chen
The Au∕Cr∕Zr+-implanted-ZrO2∕n+-Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (Rratio) of high resistive state and low resistive state is as large as five orders of magnitude with 0.5V readout bias. Zr+-implanted-ZrO2 films exhibit good retention characteristics and high device yield. The impact of implanted...... hiện toàn bộ
Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer
Applied Physics Letters - Tập 100 Số 14 - 2012
Thuy Trinh, Thanh, Duy Nguyen, Van, Hanh Nguyen, Hong, Raja, Jayapal, Jang, Juyeon, Jang, Kyungsoo, Baek, Kyunghyun, Ai Dao, Vinh, Yi, Junsin
Solid phase immiscibility in GaInN
Applied Physics Letters - Tập 69 Số 18 - Trang 2701-2703 - 1996
I. H. Ho, G. B. Stringfellow
The large difference in interatomic spacing between GaN and InN is found to give rise to a solid phase miscibility gap. The temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence-force-field model where the lattice is allowed to relax beyond the first nearest neighbor. The strain energy is found to decrease until approximate...... hiện toàn bộ
Piezoelectric nanogenerator using CdS nanowires
Applied Physics Letters - Tập 92 Số 2 - 2008
Yi‐Feng Lin, Jinhui Song, Yong Ding, Shih‐Yuan Lu, Zhong Lin Wang
Vertically grown cadmium sulfide (CdS) nanowire (NW) arrays were prepared using two different processes: hydrothermal and physical vapor deposition (PVD). The NWs obtained from the hydrothermal process were composed of alternating hexagonal wurtzite (WZ) and cubic zinc blende (ZB) phases with growth direction along WZ ⟨0001⟩ and ZB [111]. The NWs produced by PVD process are single crystall...... hiện toàn bộ
Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates
Applied Physics Letters - Tập 103 Số 25 - 2013
António José Trindade, Benoit Guilhabert, D. Massoubre, Dandan Zhu, N. Laurand, Erdan Gu, I. M. Watson, C. J. Humphreys, Martin D. Dawson
The transfer printing of 2 μm-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150 nm (±14 nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in t...... hiện toàn bộ
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