All high T c edge-geometry weak links utilizing Y-Ba-Cu-O barrier layers

Applied Physics Letters - Tập 59 Số 8 - Trang 982-984 - 1991
B. D. Hunt1, M. C. Foote1, Louis J. Bajuk1
1Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California, 91109

Tóm tắt

High quality YBa2Cu3O7−x/normal-metal/YBa2Cu3O7−x edge-geometry weak links have been fabricated using nonsuperconducting Y-Ba-Cu-O barrier layers deposited by laser ablation at reduced growth temperatures. Devices incorporating 25–100 Å thick barrier layers exhibit current-voltage characteristics consistent with the resistively shunted junction model, with strong microwave and magnetic field response at temperatures up to 85 K. The critical currents vary exponentially with barrier thickness, and the resistances scale linearly with Y-Ba-Cu-O interlayer thickness and device area, indicating good barrier uniformity, with an effective normal metal coherence length of 20 Å.

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Tài liệu tham khảo

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Thông tin xuất bản

Applied Physics Letters

Tập 59 Số 8

982-984

Thông tin tác giả