Extension of the bi-epitaxial Josephson junction process to various substrates

Applied Physics Letters - Tập 59 Số 17 - Trang 2177-2179 - 1991
K. Char1, M. S. Colclough1, L. P. Lee1, G. Zaharchuk1
1Conductus, Inc., 969 West Maude Avenue, Sunnyvale, California 94086

Tóm tắt

We report an extension of the bi-epitaxial Josephson junction process that permits the use of a variety of substrate materials and allows junctions to be placed at any level of a multilayer structure. The new materials, SrTiO3, MgO, and CeO2, serve as a base layer, a seed layer, and a buffer layer, respectively, and replace Al2O3, MgO, and SrTiO3 in the original bi-epitaxial process. This new process offers much more flexibility in designing a circuit. Bi-epitaxial junctions made with the new set of materials show much improved electrical properties, especially at 77 K. We attribute the improved electrical characteristics to a better thermal expansion match between the substrate and the thin-film layers. Important junction properties such as critical currents and junction resistances are compared to other types of grain boundary junctions.

Từ khóa


Tài liệu tham khảo

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1990, Phys. Rev. Lett., 64, 228, 10.1103/PhysRevLett.64.228

1990, Appl. Phys. Lett., 57, 1155, 10.1063/1.104223

1990, Phys. Rev. B, 42, 10735, 10.1103/PhysRevB.42.10735

1991, Appl. Phys. Lett., 58, 1095, 10.1063/1.104382

Thông tin
Thông tin xuất bản

Applied Physics Letters

Tập 59 Số 17

2177-2179

Thông tin tác giả