All a-axis oriented YBa2Cu3O7−y-PrBa2Cu3O7−z-YBa2Cu3O7−y Josephson devices operating at 80 K

Applied Physics Letters - Tập 59 Số 6 - Trang 742-744 - 1991
J. B. Barner1, Charles T. Rogers2,3, A. Inam2,3, R. Ramesh2,3, S. Bersey4
1JPL, Pasadena, CA; Bell Communications Research, Inc. Red Bank, NJ, United States
2Bellcore, Red Bank, New Jersey 07701-7040
3Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States
4Bell Communications Research, Inc. Red Bank, NJ, United States

Tóm tắt

We have demonstrated the controllable, reproducible fabrication of nonhysteretic Josephson devices with excess-current weak-link characteristics at temperatures up to 80 K. The devices are patterned from in situ deposited a-axis oriented YBa2Cu3O7−y-PrBa2Cu3O7−z-YBa2Cu3O7−y trilayers grown on SrTiO3(001) substrates. Control of the critical current density and resistance is achieved by varying the thickness of the PrBa2Cu3O7−z barrier layer. Critical current densities in excess of 104 A/cm2 have been reproducibly measured; good uniformity across the wafer is obtained with device parameters scaling with device area. Strong constant-voltage current steps are observed under 11.2 GHz microwave radiation at temperatures up to and above 80 K.

Từ khóa


Tài liệu tham khảo

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Thông tin xuất bản

Applied Physics Letters

Tập 59 Số 6

742-744

Thông tin tác giả