Danh mục bài báo

60th DRC. Conference Digest Device Research Conference

Công bố khoa học tiêu biểu của tạp chí. * Dữ liệu chỉ mang tính chất tham khảo

Sắp xếp

From electron tubes to nanostructures: 60 years of electron device research

60th DRC. Conference Digest Device Research Conference· ·Trang 3-8

H. Kroemer

#Electron tubes #Nanostructures #Electron devices #Corporate acquisitions #Microwave devices #Solid state circuits #Heterojunction bipolar transistors #Nanostructured materials #Radar #Microwave technology

Speed advantage of optimized metal S/D in 25 nm dual-gate fully-depleted CMOS

60th DRC. Conference Digest Device Research Conference· ·Trang 77-78

D. Connelly, D. Grupp, D. Yergeau

#Immune system #Delay #Degradation #Impedance #Contact resistance #MOS devices #CMOS technology #Virtual colonoscopy #Circuit simulation #Integrated circuit interconnections

RF noise in deep sub-/spl mu/m MOSFETs and proposed solution

60th DRC. Conference Digest Device Research Conference· ·Trang 71-72

C.H. Huang, C.H. Lai, J.C. Hsieh, J. Liu, A. Chin

#Radio frequency #MOSFETs #Noise measurement #Fingers #Frequency dependence #Circuit simulation #Electrical resistance measurement #Noise figure #Scattering parameters #Equivalent circuits

Graph-based quantum integrated circuits using III-V mulch-branch nanowire networks and their nano-Schottky gate control

60th DRC. Conference Digest Device Research Conference· ·Trang 103-104

S. Kasai, M. Yumoto, T. Fukushi, T. Muranaka, H. Hasegawa

#III-V semiconductor materials #Indium gallium arsenide #Nanoscale devices #Etching #Gallium arsenide #Electrons #Logic functions #Wire #Chemicals #Data structures

Device Research Conference (Cat. No.02TH8606)

60th DRC. Conference Digest Device Research Conference· ·2002

AlGaN/GaN current aperture vertical electron transistors

60th DRC. Conference Digest Device Research Conference· ·Trang 31-32

I. Ben-Yaacov, Y.-K. Seck, S. Heikman, S.P. DenBaars, U.K. Mishra

#Aluminum gallium nitride #Gallium nitride #Apertures #Electrons #Insulation #Conducting materials #Etching #Breakdown voltage #MOCVD #Surface treatment

Electron inversion layer mobility in strained-Si n-MOSFETs with high channel doping concentration achieved by ion implantation

60th DRC. Conference Digest Device Research Conference· ·Trang 43-44

H.M. Nayfeh, J.L. Hoyt, C.W. Leitz, A.J. Pitera, E.A. Fitzgerald, D.A. Antoniadis

#Electron mobility #MOSFET circuits #Doping #Implants #Ion implantation #Materials science and technology #Temperature #Boron #Threshold voltage #Dielectric substrates

Demonstration of FinFET CMOS circuits

60th DRC. Conference Digest Device Research Conference· ·Trang 47-48

B.A. Rainey, D.M. Fried, M. Ieong, J. Kedzierski, E.J. Nowak

#FinFETs #Circuits #Inverters #CMOS technology #Etching #Electrodes #Implants #Silicides #Tungsten #Voltage

Thermal performance of metamorphic double heterojunction bipolar transistors with InP and InAlP buffer layers

60th DRC. Conference Digest Device Research Conference· ·Trang 169-170

Y.M. Kim, M. Dahlstrom, M.J.W. Rodwell, A.C. Gossard

#Double heterojunction bipolar transistors #Indium phosphide #Buffer layers #Thermal resistance #Thermal conductivity #Gallium arsenide #Optical fibers #Optical device fabrication #Geometry #Temperature

Structured cold point thermoelectric coolers

60th DRC. Conference Digest Device Research Conference· ·Trang 125-128

U. Ghoshal

#Thermoelectricity #Temperature dependence #Thermal conductivity #Thermal management of electronics #Transistors #Solid state circuits #Thermal management #Refrigeration #Thermodynamics #Material properties

Tổng số: 79