60th DRC. Conference Digest Device Research Conference

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Device Research Conference (Cat. No.02TH8606)
60th DRC. Conference Digest Device Research Conference - - 2002
Presents the front cover and table of contents from the conference proceedings.
High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode
60th DRC. Conference Digest Device Research Conference - - Trang 193-194
Rino Choi, K. Onishi, Chang Scok Kang, Renee Nieh, S. Gopalan, Hag-Ju Cho, S. Krishnan, J.C. Lee
MOSFETs with high gate dielectric such as HfOz, ZrOz and LazOl have been studied intensively. Among these materials, HfOz seems to be promising because of its compatibility with the polysilicon gate process and relatively superior scalability.
#MOSFETs #Fabrication #Hafnium oxide #Dielectrics #Electrodes #Annealing #Interface states #Scattering #Temperature #Hydrogen
Room temperature negative differential resistance in AlN/GaN double barrier resonant tunneling diodes grown by RF-plasma assisted molecular beam epitaxy
60th DRC. Conference Digest Device Research Conference - - Trang 157-158
A. Kikuchi, R. Bannai, K. Kishino
AlN/GaN double-barrier resonant tunneling diodes (DB-RTD) have been successfully fabricated on (0001) Al/sub 2/O/sub 3/ substrates by molecular beam epitaxy, using RF plasma nitrogen source (RF-MBE). The AlN/GaN DB-RTDs were designed to have 3 monolayers (ML)-thick GaN quantum well and two 4 ML-thick AlN barriers sandwiched by n-GaN contact layers. Clear room temperature negative differential resi...... hiện toàn bộ
#Gallium nitride #Resonant tunneling devices #Diodes #Plasma temperature #Voltage #Molecular beam epitaxial growth #Electric resistance #Substrates #Current density #Radio frequency
Memory device based on a ferroelectric tunnel junction
60th DRC. Conference Digest Device Research Conference - - Trang 97-98
J.R. Contreras, J. Schubert, H. Kohlstedt, R. Waser
For the first time tunnel junctions with a ferroelectric barrier (FTJ) have been prepared and a bi-stable and highly reproducible hysteresis in the I-V curve and the bias dependence of the dynamic conductance has been measured. This behavior will be discussed in the framework of a possible new effect based on the interplay between the polarization state in the barrier and direct electron tunneling...... hiện toàn bộ
#Ferroelectric materials #Hysteresis #Electrodes #Electrons #Atomic force microscopy #Voltage #Polarization #Tunneling #Capacitors #Ferroelectric films
A 1.5 /spl mu/m GaInNAs(Sb) laser grown on GaAs by MBE
60th DRC. Conference Digest Device Research Conference - - Trang 139-140
Wonill Ha, V. Gambin, S. Bank, M. Wistey, H. Yuen, Seongsin Kim, J.S. Harris
We have varied growth parameters including group III and V growth rates, Sb flux, and N concentration, in the MBE growth of GaInAs(Sb)/GaAs quantum well lasers. We have found that it is possible to maintain high photoluminescence intensity for samples above 1.5 /spl mu/m. By introducing the optimum Sb flux and cracking temperature, In incorporation up to 50% becomes possible. To our knowledge, thi...... hiện toàn bộ
#Gallium arsenide #Optical waveguides #Waveguide lasers #Pump lasers #Stimulated emission #Quantum well lasers #Molecular beam epitaxial growth #Substrates #Optical pumping #Semiconductor optical amplifiers
A resonant tunneling permeable base transistor with Al-free tunneling barriers
60th DRC. Conference Digest Device Research Conference - - Trang 155-156
E. Lind, P. Lindstrom, I. Pietzonka, W. Seifert, L.-E. Wernersson
Resonant tunneling based devices are an intriguing set of devices with promising high speed, low power and high functionality capabilities. We have developed an technology to embed metallic features on the nm-scale inside a semiconductor. By combining such metallic features and heterostructures we have developed a new type of tunneling transistor, the so called Resonant Tunneling Permeable Base Tr...... hiện toàn bộ
#Resonant tunneling devices #Epitaxial growth #Epitaxial layers #Solid state circuits #Semiconductor diodes #Electron devices #Frequency estimation #Physics #Nanoscale devices #Gratings
AlGaN/GaN HEMTs grown by MBE on semi-insulating HVPE GaN templates
60th DRC. Conference Digest Device Research Conference - - Trang 33
N.G. Weimann, M.J. Manfra, J.W.P. Hsu, L.N. Pfeiffer, K.W. West, D.V. Lang, R.J. Molnar
Summary form only given. Attempts to circumvent the low thermal conductivity of sapphire substrates by including in a device structure a thick (15 /spl mu/m) GaN buffer grown by HVPE between the sapphire substrate and the MBE device layer stack. The heat generated in the device close to the surface of the structure is spread laterally in the HVPE buffer, increasing the effective thermal area of th...... hiện toàn bộ
#Gallium nitride #Aluminum gallium nitride #HEMTs #MODFETs
Tunneling through multi-layer gate dielectrics - an analytical model
60th DRC. Conference Digest Device Research Conference - - Trang 105-106
I. Polishchuk, Yee-Chia Yeo, Tsu-Jae King, Chenming Hu
We propose an analytical direct-tunneling model for multilayer gate dielectrics. This model predicts the amount of gate leakage current as a function of equivalent oxide thickness of the gate dielectric stack and the composition of the stack. This simple model is a useful tool in the development of future CMOS gate dielectric stacks.
#Tunneling #Dielectrics #Analytical models #Leakage current #Semiconductor device modeling #Electrons #Frequency #Voltage #Predictive models #CMOS integrated circuits
Stable breakdown characteristics of 600 V LDMOS by extended P-bottom region
60th DRC. Conference Digest Device Research Conference - - Trang 63-64
S.L. Kim, C.K. Jeon, J.J. Kim, Y.S. Choi, M.H. Kim, H.S. Kang, C.S. Song
A new LDMOS promising stable hard breakdown characteristics by releasing the crowded electric field at the gate oxide edge is proposed. Extending P-bottom into the n-drift region can stabilize the breakdown characteristics of LDMOS. The numerical calculations and experimental results have shown that a stable breakdown voltage of over 600 V can be obtained when enclosed P-bottom width to P-well is ...... hiện toàn bộ
#Electric breakdown #Breakdown voltage #Avalanche breakdown #Switches #Semiconductor device breakdown #Batteries #AC-DC power converters #Power supplies #Charge carrier processes #Acceleration
Normal incidence long-wave infrared InAs/In/sub 0.15/Ga/sub 0.85/As DWELL detectors operating at 8.2 /spl mu/m
60th DRC. Conference Digest Device Research Conference - - Trang 79-80
S. Krishna, S. Raghavan, B. Fuchs, A. Stintz, K. Malloy, C. Morath, Dang Le, D.A. Cardimona
The self-assembled InAs/GaAs quantum dot system is grown by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD). The intersubband and the bound to continuum spacing between the particle-in-a-box like energy levels in these dots lie in the range of 60-450meV (3-12 /spl mu/m). In contrast to the quantum well infrared photodetectors (QWIPs), QD detectors can detect normal...... hiện toàn bộ
#Infrared detectors #Gallium arsenide #Molecular beam epitaxial growth #Radiation detectors #Quantum dots #Organic chemicals #Chemical vapor deposition #MOCVD #Energy states #Photodetectors
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