Electron inversion layer mobility in strained-Si n-MOSFETs with high channel doping concentration achieved by ion implantation
60th DRC. Conference Digest Device Research Conference - Trang 43-44
Tóm tắt
Inversion layer mobility measurements in strained-Si n-MOSFETs fabricated using a typical MOSFET process including high temperature steps and with various channel doping concentrations, achieved by boron ion implantation, are compared with co-processed bulk-Si n-MOSFETs. It is found that a near-universal mobility relationship with vertical effective electric field, E/sub eff/, exists for strained-Si and bulk-Si n-MOSFETs for all channel implant doses in this study. Significant mobility enhancement for E/sub eff/ up to 2 MV/cm (1.5-1.7 x) is obtained for channel doping concentrations ranging from 10/sup 17/-6 /spl times/ 10/sup 18/ cm/sup -3/.
Từ khóa
#Electron mobility #MOSFET circuits #Doping #Implants #Ion implantation #Materials science and technology #Temperature #Boron #Threshold voltage #Dielectric substratesTài liệu tham khảo
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takagi, 1994, On the Universality of the Inversion Layer Mobility in Si MOSFET's: Part 1-Effects of Substrate Impurity Concentration, IEEE Transactions on Electron Devices, 41
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