60th DRC. Conference Digest Device Research Conference
Cơ quản chủ quản: N/A
Các bài báo tiêu biểu
Structured cold point thermoelectric coolers
- Trang 125-128
Solid-state thermoelectric coolers can revolutionize thermal management of
electronics and optoelectronic systems, and small-scale refrigeration if the
coolers could attain thermodynamic efficiency greater than 30% of the ideal
Carnot cycle. The maximum temperature differential and the efficiency of
thermoelectric coolers are known to depend on material properties through the
thermoelectric figure...
#Thermoelectricity #Temperature dependence #Thermal conductivity #Thermal management of electronics #Transistors #Solid state circuits #Thermal management #Refrigeration #Thermodynamics #Material properties
Suppression of drain conductance frequency dispersion in InP-based HEMTs by eliminating hole accumulation
- Trang 167-168
InP-based HEMTs are promising devices for large-capacity optical fiber
communication systems. To enable higher bit rate systems, though, drain
conductance (g/sub d/) frequency dispersion must be suppressed as it causes
jitter, which reduces the size of eye pattern openings in integrated circuits.
We propose a planar structure device to remarkably suppress g/sub d/ frequency
dispersion by eliminati...
#HEMTs #MODFETs #Optical fiber dispersion #Ohmic contacts #Capacitance #Impact ionization #Radio frequency #Laboratories #Optical fiber communication #Bit rate
Electron inversion layer mobility in strained-Si n-MOSFETs with high channel doping concentration achieved by ion implantation
- Trang 43-44
Inversion layer mobility measurements in strained-Si n-MOSFETs fabricated using
a typical MOSFET process including high temperature steps and with various
channel doping concentrations, achieved by boron ion implantation, are compared
with co-processed bulk-Si n-MOSFETs. It is found that a near-universal mobility
relationship with vertical effective electric field, E/sub eff/, exists for
strained-...
#Electron mobility #MOSFET circuits #Doping #Implants #Ion implantation #Materials science and technology #Temperature #Boron #Threshold voltage #Dielectric substrates
Index
- Trang 199-201 - 2002
This index covers all technical items that appeared in this conference.
#Indexes
Multilayer tunneling barriers for nonvolatile memory applications
- Trang 153-154
A tunnel barrier consisting of two materials with different dielectric constant
is demonstrated to show that improved programming and/or erasing performance is
obtained compared to conventional oxide layers. It is also shown that charge
trapping is not a showstopper for the application of such stacks in floating
gate nonvolatile memory devices.
#Nonhomogeneous media #Tunneling #Nonvolatile memory #Capacitors #Dielectric constant #Low voltage #High K dielectric materials #Testing #EPROM #Lead compounds
A comparative study of RF noise characteristics of different submicron SOI MOSFET structures on SIMOX technology
- Trang 197-198 - 2002
The silicon-on-insulator (SOI) CMOS technology has been attractive for radio
frequency (RF) integrated circuits due to its advantages of reduced parasitic
capacitance, minimal substrate loss and noise coupling, and monolithic
integration of high-Q passive components. However, there are various choices of
SOI device structures such as fully depleted (FD), partially depleted (PD) and
dynamic thresho...
#Radio frequency #MOSFET circuits #Integrated circuit noise #CMOS technology #Silicon on insulator technology #Integrated circuit technology #Monolithic integrated circuits #Cutoff frequency #CMOS integrated circuits #Radiofrequency integrated circuits
Device Research Conference (Cat. No.02TH8606)
- 2002
Presents the front cover and table of contents from the conference proceedings.
Simulation of quantum and scattering effects along the channel of ultra-scaled Si-based MOSFETs
- Trang 109-110
As the dimensions of MOSFETs scale into deep sub-0.1 /spl mu/m, a clear
understanding of both the effects of scattering and quantum interference is
needed. In this work, the quantum transport simulator "Schrodinger Equation
Monte Carlo" (SEMC) (L.F. Register, in Quantum-Based Electronic Devices and
Systems, M. Dutta and M.A. Stroscio, eds., World Scientific, Singapore, p. 251,
1998) is used to exa...
#Particle scattering #Optical scattering #Interference #Optical reflection #Silicon germanium #Germanium silicon alloys #MOSFET circuits #Microelectronics #Equations #Analytical models
RF MEMS for wireless applications
- Trang 9-12
Micromechanical (or /spl mu/mechanical) communication circuits fabricated via
IC-compatible MEMS technologies and capable of low-loss filtering, mixing,
switching, and frequency generation, are described with the intent to
miniaturize wireless transceivers. Possible MEMS-based receiver front-end
architectures are then presented that use these micromechanical circuits in
large quantities to enhance...
#Radiofrequency microelectromechanical systems #Micromechanical devices #Radio frequency #Tunable circuits and devices #Oscillators #Switching circuits #Communication switching #Packaging #Matched filters #Filtering
SiGe-channel 0.1-/spl mu/m pMOSFETs with super self-aligned ultra-shallow junction formed by selective in-situ B-doped SiGe CVD
- Trang 83-84
As the feature size of MOSFETs becomes increasingly small, the super
self-aligned process is extremely important for the progress of ULSIs. The
improvement of carrier mobility in the channel region is also indispensable. It
has been reported that the introduction of high-quality Si/sub 1-x/Ge/sub x/
with x/spl ap/0.5 in the channel region drastically improves the pMOSFET
performance. In this paper...
#MOSFET circuits #Electrodes #Flowcharts #Fabrication #Threshold voltage