60th DRC. Conference Digest Device Research Conference
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Các bài báo tiêu biểu
Structured cold point thermoelectric coolers
- Trang 125-128
Solid-state thermoelectric coolers can revolutionize thermal management of
electronics and optoelectronic systems, and small-scale refrigeration if the
coolers could attain thermodynamic efficiency greater than 30% of the ideal
Carnot cycle. The maximum temperature differential and the efficiency of
thermoelectric coolers are known to depend on material properties through the
thermoelectric figure...
#Thermoelectricity #Temperature dependence #Thermal conductivity #Thermal management of electronics #Transistors #Solid state circuits #Thermal management #Refrigeration #Thermodynamics #Material properties
Tunneling through multi-layer gate dielectrics - an analytical model
- Trang 105-106
We propose an analytical direct-tunneling model for multilayer gate dielectrics.
This model predicts the amount of gate leakage current as a function of
equivalent oxide thickness of the gate dielectric stack and the composition of
the stack. This simple model is a useful tool in the development of future CMOS
gate dielectric stacks.
#Tunneling #Dielectrics #Analytical models #Leakage current #Semiconductor device modeling #Electrons #Frequency #Voltage #Predictive models #CMOS integrated circuits
Room temperature grown zirconia/SiO/sub 2/ dielectric stacks with 1 nm EOT
- Trang 101-102
Metal-oxide films such as zirconia and hafnia are currently being investigated
to replace silicon dioxide as the gate dielectric material in future CMOS
devices. It is important to develop processing science to grow these dielectric
films of high electrical quality. Previously, we have grown zirconia films by
ultraviolet ozone oxidation (UVO) on chemical oxide with electrical thickness
ranging fro...
#Temperature #Voltage #Stress #Semiconductor films #Dielectric thin films #Leakage current #Silicon #Dielectric films #Oxidation #Materials science and technology
Speed advantage of optimized metal S/D in 25 nm dual-gate fully-depleted CMOS
- Trang 77-78
With shrinking dimensions, control of extrinsic impedance is becoming
increasingly performance limiting. Improvements to source/drain (S/D) technology
thus become critical to technology scaling. Metal S/D is a promising approach. A
doped S/D device was modeled with a two-component S/D profile: an ultra-steep
extension profile offset from the gate edge, and a stronger primary S/D profile
aligned to...
#Immune system #Delay #Degradation #Impedance #Contact resistance #MOS devices #CMOS technology #Virtual colonoscopy #Circuit simulation #Integrated circuit interconnections
Reliability and ESD for high voltage LDMOS with SenseFET
- Trang 57-58
This paper presents the structure and method of effective ESD protection and
reliability in high voltage LDMOS with Sense Source (SenseFET) which is newly
proposed 1-chip process for smart power ICs. This structure and method have been
investigated experimentally and theoretically by employing two-dimensional
process and device simulators. The cause of failure turned out to be Sense
Source which i...
#Electrostatic discharge #Protection #Semiconductor device reliability #MOSFETs #Resistors #Testing #Breakdown voltage #Contacts #Batteries #MOS devices
Contact printing with nanometer resolution
- Trang 149-150
Developed a purely additive contact printing technique that can, in a single
step, form complex patterns of functional materials with nanometer resolution.
This method can print directly nanostructures without the use of sacrificial
resists, etching procedures or post-patterning deposition steps that are often
required with other nanolithographic techniques. It is operationally simple,
compatible ...
#Printing #Dielectric materials #Nanostructured materials #Dielectric substrates #Metal-insulator structures #Organic thin film transistors #Additives #Nanostructures #Resists #Etching
RF noise in deep sub-/spl mu/m MOSFETs and proposed solution
- Trang 71-72
Anomalous dependence of finger number on noise figure (NF) is observed for 0.18
/spl mu/m and 0.13 /spl mu/m MOSFETs. A lowest NF of 0.93 dB is measured for
0.18 /spl mu/m MOSFET at 5.8 GHz using 50 fingers but increases with either
increasing or decreasing finger number. The NF of 0.13 /spl mu/m devices have
larger value and continuously decreases with increasing finger number. This is
due to the...
#Radio frequency #MOSFETs #Noise measurement #Fingers #Frequency dependence #Circuit simulation #Electrical resistance measurement #Noise figure #Scattering parameters #Equivalent circuits
An enhanced compact waffle MOSFET for RF integrated circuits
- Trang 73-74 - 2002
Several layout methods have been proposed to increase the compactness of a
MOSFET. Among the methods, the waffle layout has been mentioned most in the
literature. Nevertheless, it has not been commonly used since its inception.
This is simply due to the deficiencies associated with the traditional waffle
layout in submicron CMOS technology. In this paper, an enhanced compact and
expandable waffle ...
#MOSFET circuits #Radio frequency #Radiofrequency integrated circuits #Fingers #Performance gain #Transconductance #Parasitic capacitance #CMOS technology #Circuit testing #CMOS process
Nano-scale implantless Schottky-barrier SOI FinFETs with excellent ambipolar performance
- Trang 45-46
A novel nano-scale SOI device featuring silicide Schottky source/drain and
field-induced S/D extensions is proposed and demonstrated. Excellent p- and
n-channel performance with nearly ideal subthreshold swing (/spl sim/ 60
mV/dec.) and high on-/off-state current ratio (>10/sup 9/ and >10/sup 8/ for n-
and p-channel modes, respectively) is realized, for the first time, on a single
device. These en...
#FinFETs #Silicides #Etching #Fabrication #Voltage #Nanoscale devices #Fluctuations #Lithography #Doping #Oxidation
Polymer LEDs and lasers for integrated optics
- Trang 145
Summary form only given. Polymer LEDs and lasers are attractive for integrated
optics because they can be easily deposited from solution by spin coating,
inkjet printing or screen printing techniques onto just about any substrate. The
best polymer LEDs now have high efficiencies (> 4 %), brightnesses of 100
Cd/m/sup 2/ at 3-4 V and lifetimes longer than 10,000 hours. Several companies
are beginnin...
#Organic light emitting diodes #Integrated optics #Polymers #Coatings #Brightness #Manufacturing #Distributed feedback devices #Diode lasers