60th DRC. Conference Digest Device Research Conference
Cơ quản chủ quản: N/A
Các bài báo tiêu biểu
Structured cold point thermoelectric coolers
- Trang 125-128
#Thermoelectricity #Temperature dependence #Thermal conductivity #Thermal management of electronics #Transistors #Solid state circuits #Thermal management #Refrigeration #Thermodynamics #Material properties
1
InP-based HEMTs with a cutoff frequency higher than 450 GHz
- Trang 163-166
#HEMTs #MODFETs #Cutoff frequency #Indium compounds #Fabrication #Indium gallium arsenide #Indium phosphide #Etching #Resists #Electrons
Room temperature negative differential resistance in AlN/GaN double barrier resonant tunneling diodes grown by RF-plasma assisted molecular beam epitaxy
- Trang 157-158
#Gallium nitride #Resonant tunneling devices #Diodes #Plasma temperature #Voltage #Molecular beam epitaxial growth #Electric resistance #Substrates #Current density #Radio frequency
An enhanced compact waffle MOSFET for RF integrated circuits
- Trang 73-74 - 2002
#MOSFET circuits #Radio frequency #Radiofrequency integrated circuits #Fingers #Performance gain #Transconductance #Parasitic capacitance #CMOS technology #Circuit testing #CMOS process
Optoelectronic conversion through 850nm band single mode Si/sub 3/N/sub 4/ photonic waveguides for Si-on-chip integration
- Trang 93-94
#Optical waveguides #Optical fibers #Photodetectors #Optical coupling #Optical fiber losses #Optical device fabrication #Optical scattering #Semiconductor waveguides #Laboratories #Delay
Polymer LEDs and lasers for integrated optics
- Trang 145
#Organic light emitting diodes #Integrated optics #Polymers #Coatings #Brightness #Manufacturing #Distributed feedback devices #Diode lasers
First diamond FET RF power measurement on diamond quasi-substrate
- Trang 181-182
#FETs #Radio frequency #Power measurement #Crystalline materials #Semiconductor device measurement #Size measurement #Ceramics #Buffer layers #Hydrogen #Power system stability
Impact of NH/sub 3/ pre-treatment on the electrical and reliability characteristics of ultra thin hafnium silicate films prepared by re-oxidation method
- Trang 195-196
#Capacitors #Hysteresis #MOS devices #MOSFETs #Degradation #Atomic layer deposition #Gate leakage #Annealing #Life estimation #Lifetime estimation
Reliability and ESD for high voltage LDMOS with SenseFET
- Trang 57-58
#Electrostatic discharge #Protection #Semiconductor device reliability #MOSFETs #Resistors #Testing #Breakdown voltage #Contacts #Batteries #MOS devices