60th DRC. Conference Digest Device Research Conference
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Các bài báo tiêu biểu
Structured cold point thermoelectric coolers
- Trang 125-128
Solid-state thermoelectric coolers can revolutionize thermal management of
electronics and optoelectronic systems, and small-scale refrigeration if the
coolers could attain thermodynamic efficiency greater than 30% of the ideal
Carnot cycle. The maximum temperature differential and the efficiency of
thermoelectric coolers are known to depend on material properties through the
thermoelectric figure...
#Thermoelectricity #Temperature dependence #Thermal conductivity #Thermal management of electronics #Transistors #Solid state circuits #Thermal management #Refrigeration #Thermodynamics #Material properties
3.2 W/mm, 71% PAE AlGaN/GaN HEMT operation at 20 GHz
- Trang 27-28
In this paper we report record AlGaN/GaN HEMT operation at 20 GHz. The 500 μm
total gate periphery devices exhibited a continuous wave output power of 3.2
W/mm with a gain of 5.2 dB and an associated power aided efficiency of 71%. To
the best of our knowledge, these are the highest reported output power and PAE
results for AlGaN/GaN HEMT devices operating at 20 GHz. AlGaN/GaN HEMTs offer
increased...
#Aluminum gallium nitride #Gallium nitride #HEMTs #Power generation #Thermal conductivity #Electrons #III-V semiconductor materials #Gain #Electric breakdown #Charge carrier density
A 1.5 /spl mu/m GaInNAs(Sb) laser grown on GaAs by MBE
- Trang 139-140
We have varied growth parameters including group III and V growth rates, Sb
flux, and N concentration, in the MBE growth of GaInAs(Sb)/GaAs quantum well
lasers. We have found that it is possible to maintain high photoluminescence
intensity for samples above 1.5 /spl mu/m. By introducing the optimum Sb flux
and cracking temperature, In incorporation up to 50% becomes possible. To our
knowledge, thi...
#Gallium arsenide #Optical waveguides #Waveguide lasers #Pump lasers #Stimulated emission #Quantum well lasers #Molecular beam epitaxial growth #Substrates #Optical pumping #Semiconductor optical amplifiers
Ultrathin high-/spl kappa/ gate dielectric technology for germanium MOS applications
- Trang 191-192
For the first time, we have successfully demonstrated the use of a high-/spl
kappa/ gate dielectric material, ZrO/sub 2/, for CMOS applications on a pure
germanium substrate. Using a low-temperature formation technique, we achieved
excellent C-V characteristics with hysteresis of 1.5 mV and a capacitance-based
equivalent SiO/sub 2/ thickness (t/sub ox,eq/) of about 5 /spl Aring/.
Additionally, exc...
#High K dielectric materials #High-K gate dielectrics #Germanium #Hysteresis #Capacitance-voltage characteristics #Dielectric substrates #Capacitance #MOS devices #Surface treatment #Frequency
A novel frequency-doubling device based on three-terminal ballistic junction
- Trang 159-160
Ballistic devices have received increasing attention for their nonlinear
electrical properties, which are interesting from both physics and application
points of view. Recently, novel nonlinear electrical properties of
three-terminal ballistic junctions (TBJs) have been discovered theoretically and
experimentally. In this work we propose and demonstrate functionality of a novel
frequency-doubling ...
#Voltage #Physics #Nanoscale devices #FETs #Frequency measurement #Gain measurement #Integrated circuit measurements #Temperature #Atomic force microscopy #Solid state circuits
Thermal performance of metamorphic double heterojunction bipolar transistors with InP and InAlP buffer layers
- Trang 169-170
InP-based double heterojunction bipolar transistors (DHBT) are a key technology
for high-speed optical fiber transmission. InP substrates are expensive and are
not available in as large sizes as GaAs substrates. Moreover, InP substrates are
fragile and are easily broken in fabrication. This motivates development of
metamorphic InP DHBT (MDHBT) on GaAs. Thermal performance is of critical
importance...
#Double heterojunction bipolar transistors #Indium phosphide #Buffer layers #Thermal resistance #Thermal conductivity #Gallium arsenide #Optical fibers #Optical device fabrication #Geometry #Temperature
Submicron enhancement-mode AlGaN/GaN HEMTs
- Trang 23-24
Most recent GaN-based HEMT technology has been focused toward microwave power
applications. In this work, we report DC and RF characteristics of the first
E-mode AlGaN/GaN HEMTs fabricated down to 0.2 /spl mu/m gatelength, and having
an f/sub t/ reaching 25 GHz. Further improvement of E-mode GaN HEMTs could open
potential applications for mixed-signal ICs with a high dynamic range.
#Aluminum gallium nitride #Gallium nitride #HEMTs #MODFETs #Threshold voltage #Radio frequency #Schottky diodes #Moon #Laboratories #Microwave devices
Suppression of drain conductance frequency dispersion in InP-based HEMTs by eliminating hole accumulation
- Trang 167-168
InP-based HEMTs are promising devices for large-capacity optical fiber
communication systems. To enable higher bit rate systems, though, drain
conductance (g/sub d/) frequency dispersion must be suppressed as it causes
jitter, which reduces the size of eye pattern openings in integrated circuits.
We propose a planar structure device to remarkably suppress g/sub d/ frequency
dispersion by eliminati...
#HEMTs #MODFETs #Optical fiber dispersion #Ohmic contacts #Capacitance #Impact ionization #Radio frequency #Laboratories #Optical fiber communication #Bit rate
High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode
- Trang 193-194
MOSFETs with high gate dielectric such as HfOz, ZrOz and LazOl have been studied
intensively. Among these materials, HfOz seems to be promising because of its
compatibility with the polysilicon gate process and relatively superior
scalability.
#MOSFETs #Fabrication #Hafnium oxide #Dielectrics #Electrodes #Annealing #Interface states #Scattering #Temperature #Hydrogen
Normal incidence long-wave infrared InAs/In/sub 0.15/Ga/sub 0.85/As DWELL detectors operating at 8.2 /spl mu/m
- Trang 79-80
The self-assembled InAs/GaAs quantum dot system is grown by molecular beam
epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD). The
intersubband and the bound to continuum spacing between the particle-in-a-box
like energy levels in these dots lie in the range of 60-450meV (3-12 /spl mu/m).
In contrast to the quantum well infrared photodetectors (QWIPs), QD detectors
can detect normal...
#Infrared detectors #Gallium arsenide #Molecular beam epitaxial growth #Radiation detectors #Quantum dots #Organic chemicals #Chemical vapor deposition #MOCVD #Energy states #Photodetectors