60th DRC. Conference Digest Device Research Conference
Cơ quản chủ quản: N/A
Lĩnh vực:
Các bài báo tiêu biểu
Structured cold point thermoelectric coolers
- Trang 125-128
Solid-state thermoelectric coolers can revolutionize thermal management of electronics and optoelectronic systems, and small-scale refrigeration if the coolers could attain thermodynamic efficiency greater than 30% of the ideal Carnot cycle. The maximum temperature differential and the efficiency of thermoelectric coolers are known to depend on material properties through the thermoelectric figure......
#Thermoelectricity #Temperature dependence #Thermal conductivity #Thermal management of electronics #Transistors #Solid state circuits #Thermal management #Refrigeration #Thermodynamics #Material properties
High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode
- Trang 193-194
MOSFETs with high gate dielectric such as HfOz, ZrOz and LazOl have been studied intensively. Among these materials, HfOz seems to be promising because of its compatibility with the polysilicon gate process and relatively superior scalability.
#MOSFETs #Fabrication #Hafnium oxide #Dielectrics #Electrodes #Annealing #Interface states #Scattering #Temperature #Hydrogen
Self-aligned extended-drain with compensating ion-implantation for extended-SOA in 30 V lateral MOS
- Trang 185-186
A compensating ion-implantation method is introduced to make self-aligned extended-drain of 30 V lateral NMOS and PMOS transistors with the only one mask and to help the improvement of electrical SOA through the shift of the critical electric field position. In general, high voltage lateral MOS has been useful for high current and high voltage applications. In that case, we have to check up the cr......
#MOS devices #Semiconductor optical amplifiers #Electric breakdown #Kirk field collapse effect #MOSFETs #Degradation #Current measurement #Oxidation
Newly designed isolated RESURF LDMOS transistor for 60 V BCD process provides 20 V vertical NPN transistor
- Trang 67-68
RESURF LDMOS transistors are utilized in high side driver applications and other applications that mandate electrical isolation between source and substrate by using isolated RESURF technology. However, the BCD process using conventional isolated RESURF LDMOS structures cannot provide high efficiency vertical NPN transistors due to the dependence of the RESURF LDMOS BV/sub dss/ (source to drain br......
#Isolation technology #Surface resistance #Driver circuits #Substrates #Electric resistance
RF MEMS for wireless applications
- Trang 9-12
Micromechanical (or /spl mu/mechanical) communication circuits fabricated via IC-compatible MEMS technologies and capable of low-loss filtering, mixing, switching, and frequency generation, are described with the intent to miniaturize wireless transceivers. Possible MEMS-based receiver front-end architectures are then presented that use these micromechanical circuits in large quantities to enhance......
#Radiofrequency microelectromechanical systems #Micromechanical devices #Radio frequency #Tunable circuits and devices #Oscillators #Switching circuits #Communication switching #Packaging #Matched filters #Filtering
Strained-Si- and SiGe-on-insulator (strained-SOI and SGOI) MOSFETs for high performance/low power CMOS application
- Trang 37-40
We have proposed and demonstrated high performance strained-SOI and SGOI MOSFETs. It is strongly expected that strained-SOI and SGOI structures and devices based on these virtual substrates can provide new device options to sub-100 nm CMOS technology with high performance/low power consumption.
#MOSFETs #Silicon germanium #Germanium silicon alloys #Substrates #Electron mobility #Oxidation #Atomic layer deposition #Charge carrier processes #Insulation #Circuit optimization
Thermal management and device failure assessment of high-power AlGaN/GaN HFETs
- Trang 99-100
Self-heating effects limit the performance of high-power AlGaN/GaN HFETs. Knowledge of the temperature in the active area of AlGaN/GaN HFETs is essential for optimizing device design, performance and reliability, however, direct measurement of this temperature is not readily achieved by IR techniques. Improved temperature information can be obtained by micro-Raman spectroscopy allowing temperature......
#Thermal management #Aluminum gallium nitride #Gallium nitride #HEMTs #MODFETs #Temperature measurement #Spectroscopy #Design optimization #Area measurement #Temperature distribution
The second revolution - mixed-technology integrated microsystems
- Trang 129-131
Surveys a variety of new approaches to the development of mixed-technology integrated microsystems within the context of a number of important national security applications. The survey in no way is exhaustive. The examples are intended merely to be representative of complex, mixed-technology systems that are being developed with new techniques that are available today. One such example involves d......
#Integrated circuit technology #Assembly #National security #Electronics packaging #Laboratories #Chemical technology #CMOS technology #Silicon #Microelectronics #Chemical industry
Submicron enhancement-mode AlGaN/GaN HEMTs
- Trang 23-24
Most recent GaN-based HEMT technology has been focused toward microwave power applications. In this work, we report DC and RF characteristics of the first E-mode AlGaN/GaN HEMTs fabricated down to 0.2 /spl mu/m gatelength, and having an f/sub t/ reaching 25 GHz. Further improvement of E-mode GaN HEMTs could open potential applications for mixed-signal ICs with a high dynamic range.
#Aluminum gallium nitride #Gallium nitride #HEMTs #MODFETs #Threshold voltage #Radio frequency #Schottky diodes #Moon #Laboratories #Microwave devices
Polymer LEDs and lasers for integrated optics
- Trang 145
Summary form only given. Polymer LEDs and lasers are attractive for integrated optics because they can be easily deposited from solution by spin coating, inkjet printing or screen printing techniques onto just about any substrate. The best polymer LEDs now have high efficiencies (> 4 %), brightnesses of 100 Cd/m/sup 2/ at 3-4 V and lifetimes longer than 10,000 hours. Several companies are beginnin......
#Organic light emitting diodes #Integrated optics #Polymers #Coatings #Brightness #Manufacturing #Distributed feedback devices #Diode lasers