60th DRC. Conference Digest Device Research Conference
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Các bài báo tiêu biểu
Structured cold point thermoelectric coolers
- Trang 125-128
Solid-state thermoelectric coolers can revolutionize thermal management of electronics and optoelectronic systems, and small-scale refrigeration if the coolers could attain thermodynamic efficiency greater than 30% of the ideal Carnot cycle. The maximum temperature differential and the efficiency of thermoelectric coolers are known to depend on material properties through the thermoelectric figure......
#Thermoelectricity #Temperature dependence #Thermal conductivity #Thermal management of electronics #Transistors #Solid state circuits #Thermal management #Refrigeration #Thermodynamics #Material properties
Impact of NH/sub 3/ pre-treatment on the electrical and reliability characteristics of ultra thin hafnium silicate films prepared by re-oxidation method
- Trang 195-196
The trade-offs between the benefits of NH/sub 3/ pre-treatment such as improved scalability, lower leakage and higher breakdown fields, and potential issues such as large hysteresis, degraded MOSFET characteristics and poorer reliability on Hf-silicate devices have been studied.
#Capacitors #Hysteresis #MOS devices #MOSFETs #Degradation #Atomic layer deposition #Gate leakage #Annealing #Life estimation #Lifetime estimation
High performance sub-100 nm Si thin-film transistors by Pattern-controlled crystallization of Thin channel layer and High temperature annealing
- Trang 49-50
In this work, we report the fabrication of high performance thin-film transistors (TFTs) down to sub-100 nm regime using Pattern-controlled crystallization of Thin channel layer and High temperature annealing (PaTH). High temperature is used to improve the film quality. Thin body thickness (Tsi) is used to suppress the short channel effects. The devices showed superior switching properties and dev......
#Thin film transistors #Crystallization #Fabrication #Grain boundaries #Statistics #Temperature #Annealing #Silicon on insulator technology #Immune system #Laboratories
Room temperature grown zirconia/SiO/sub 2/ dielectric stacks with 1 nm EOT
- Trang 101-102
Metal-oxide films such as zirconia and hafnia are currently being investigated to replace silicon dioxide as the gate dielectric material in future CMOS devices. It is important to develop processing science to grow these dielectric films of high electrical quality. Previously, we have grown zirconia films by ultraviolet ozone oxidation (UVO) on chemical oxide with electrical thickness ranging fro......
#Temperature #Voltage #Stress #Semiconductor films #Dielectric thin films #Leakage current #Silicon #Dielectric films #Oxidation #Materials science and technology
Improved MOSFET electron mobility model for advanced gate dielectric stacks
- Trang 75-76 - 2002
The scaling of CMOS technology requires continued reduction in the capacitance equivalent thickness (CET) of the gate dielectric. Since scaling of pure Si02 to thicknesses less than 12 .& becomes problematic due to the increased tunneling current, it is necessary to incorporate a material with a higher dielectric constant into the gate stack. Integration of `true high-K´ dielectrics, such as ZrO] ......
#MOSFET circuits #Electron mobility #Nitrogen #Scattering #Dielectric films #Oxidation #Dielectric measurements #Semiconductor device modeling #CMOS technology #Dielectric materials
Normal incidence long-wave infrared InAs/In/sub 0.15/Ga/sub 0.85/As DWELL detectors operating at 8.2 /spl mu/m
- Trang 79-80
The self-assembled InAs/GaAs quantum dot system is grown by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD). The intersubband and the bound to continuum spacing between the particle-in-a-box like energy levels in these dots lie in the range of 60-450meV (3-12 /spl mu/m). In contrast to the quantum well infrared photodetectors (QWIPs), QD detectors can detect normal......
#Infrared detectors #Gallium arsenide #Molecular beam epitaxial growth #Radiation detectors #Quantum dots #Organic chemicals #Chemical vapor deposition #MOCVD #Energy states #Photodetectors
Advanced MEMS for photonics
- Trang 13-16
Micro-electro-mechanical-systems (MEMS) is a key enabling technology for many new all optical network elements in next-generation photonic networks. With intensive efforts from industry in the last five years, many of these new photonic MEMS components have now moved from research laboratories into commercial reality. Examples include 2D and 3D MEMS optical switches, and wavelength-division-multip......
#Micromechanical devices #Photonics #Automatic voltage control #Micromirrors #Actuators #Fingers #Wavelength division multiplexing #Microelectromechanical devices #Laboratories #Optical add-drop multiplexers
First diamond FET RF power measurement on diamond quasi-substrate
- Trang 181-182
Diamond is an exceptional widegap material predestined for high power high frequency electronics. However, up to now devices could only be fabricated on chips cut from synthetic single crystal stones of small size, and device performance had been restricted to small signal measurements due to severe large signal instabilities However, diamond 100-oriented quasi-substrates of single crystal quality......
#FETs #Radio frequency #Power measurement #Crystalline materials #Semiconductor device measurement #Size measurement #Ceramics #Buffer layers #Hydrogen #Power system stability
A novel variational approach for modeling sub-0.1 micron MOS devices including Quantum Mechanical interface charge confinement effects
- Trang 59-60
In this work we develop and demonstrate a novel variational methodology for modeling deep sub-micron (10 nm-100 nm) three-dimensional (3D) MOS devices that includes the important Quantum Mechanical (QM) interface charge confinement effect.
#MOS devices #Quantum mechanics #Threshold voltage #Capacitance #Fluctuations #Electrostatics #Doping #Poisson equations #Matter waves #Semiconductor process modeling
Direct evidence for multiple vibrational excitation of Si-H/D bonds for hot-carrier degradation of MOS transistors
- Trang 189-190
The study of the desorption of hydrogen (H) and deuterium (D) on silicon in ultra high vacuum (UHV) by scanning tunneling microscopy (STM) led to the discovery of the giant H/D isotope effect. It was later used in passivation of the SiO/sub 2//Si interface, leading to large improvement of the hot-carrier lifetime of MOS transistors (J.W. Lyding et al, Appl. Phys. Lett., vol. 68, p. 2526, 1996). It......
#Hot carriers #Degradation #MOSFETs #Electrons #Isotopes #Hydrogen #Deuterium #Silicon #Tunneling #Microscopy