60th DRC. Conference Digest Device Research Conference
Cơ quản chủ quản: N/A
Các bài báo tiêu biểu
Structured cold point thermoelectric coolers
- Trang 125-128
Solid-state thermoelectric coolers can revolutionize thermal management of
electronics and optoelectronic systems, and small-scale refrigeration if the
coolers could attain thermodynamic efficiency greater than 30% of the ideal
Carnot cycle. The maximum temperature differential and the efficiency of
thermoelectric coolers are known to depend on material properties through the
thermoelectric figure...
#Thermoelectricity #Temperature dependence #Thermal conductivity #Thermal management of electronics #Transistors #Solid state circuits #Thermal management #Refrigeration #Thermodynamics #Material properties
Demonstration of FinFET CMOS circuits
- Trang 47-48
We present, to our knowledge, the first published experimental demonstration of
a CMOS inverter chain built from FinFETs, completely integrated in 180nm CMOS
technology, using one level of copper wiring and tungsten vias. A four-stage
inverter chain with Lgate = 200nm, Tsi =, 60nm, and Tox = 2.2nm was run at 1.5V.
We demonstrate successfully propagating CMOS levels through four inverter stages
emp...
#FinFETs #Circuits #Inverters #CMOS technology #Etching #Electrodes #Implants #Silicides #Tungsten #Voltage
P-GaN/AlGaN/GaN high electron mobility transistors
- Trang 25-26
Despite the considerable improvement in GaN-technology and material quality,
RF-dispersion is still one of the main issues hampering device progress.
RF-dispersion affects device output power and device power added efficiency
(PAE) due to a reduction in saturation current and an increase in knee voltage
at high frequencies and high biases. Surface passivation, using silicon nitride,
has been found...
#Aluminum gallium nitride #Gallium nitride #HEMTs #MODFETs #Passivation #Silicon #Surface resistance #Electron mobility #Power generation #Knee
High performance sub-100 nm Si thin-film transistors by Pattern-controlled crystallization of Thin channel layer and High temperature annealing
- Trang 49-50
In this work, we report the fabrication of high performance thin-film
transistors (TFTs) down to sub-100 nm regime using Pattern-controlled
crystallization of Thin channel layer and High temperature annealing (PaTH).
High temperature is used to improve the film quality. Thin body thickness (Tsi)
is used to suppress the short channel effects. The devices showed superior
switching properties and dev...
#Thin film transistors #Crystallization #Fabrication #Grain boundaries #Statistics #Temperature #Annealing #Silicon on insulator technology #Immune system #Laboratories
Tunneling through multi-layer gate dielectrics - an analytical model
- Trang 105-106
We propose an analytical direct-tunneling model for multilayer gate dielectrics.
This model predicts the amount of gate leakage current as a function of
equivalent oxide thickness of the gate dielectric stack and the composition of
the stack. This simple model is a useful tool in the development of future CMOS
gate dielectric stacks.
#Tunneling #Dielectrics #Analytical models #Leakage current #Semiconductor device modeling #Electrons #Frequency #Voltage #Predictive models #CMOS integrated circuits
Direct evidence for multiple vibrational excitation of Si-H/D bonds for hot-carrier degradation of MOS transistors
- Trang 189-190
The study of the desorption of hydrogen (H) and deuterium (D) on silicon in
ultra high vacuum (UHV) by scanning tunneling microscopy (STM) led to the
discovery of the giant H/D isotope effect. It was later used in passivation of
the SiO/sub 2//Si interface, leading to large improvement of the hot-carrier
lifetime of MOS transistors (J.W. Lyding et al, Appl. Phys. Lett., vol. 68, p.
2526, 1996). It...
#Hot carriers #Degradation #MOSFETs #Electrons #Isotopes #Hydrogen #Deuterium #Silicon #Tunneling #Microscopy
High performance 40-GHz bandpass filters on Si using proton implantation
- Trang 69-70
We report a very simple process to fabricate high performance filters on Si at
40 GHz using H/sup +/ implantation. The filter has only -3.4 dB loss at peak
transmission of 40 GHz with a broad 9 GHz bandwidth, which are the best filter
results on Si at mm-wave frequency. In sharp contrast, the filter on 1.5 /spl
mu/m SiO/sub 2/ isolated Si has much worse transmission and reflection loss and
failed ...
#Band pass filters #Protons #Radio frequency #Propagation losses #Conductivity #Bandwidth #Circuits #Performance loss #Gallium arsenide #Reflection
The effect of scattering on drive current of nanotransistors
- Trang 91-92
In the nanoscale regime, the electron mean free path is comparable to the
transistor channel length. Therefore, the electron transport is neither
ballistic nor diffusive as quantum coherence is partially destroyed by
scattering on phonons, surface roughness and impurities. In this work we model
electron-phonon scattering within a quantum mechanical approach using a
non-equilibrium Green's function...
#Particle scattering #Electrons #MOSFETs #Coherence #Phonons #Rough surfaces #Surface roughness #Surface resistance #Impurities #Quantum mechanics
High luminous flux mirror-substrate AlGaInP large-area emitters
- Trang 81-82
Recently, high luminous flux light-emitting diodes (LEDs) have gained in
interest for commercial applications, such as automotive lighting, dental curing
and general illumination. It is necessary to require LEDs to be driven at a
higher current to obtain a higher luminous flux. However, the conventional LED
sources are typically limited to low flux application due to the high thermal
resistance (2...
#Light emitting diodes #Thermal conductivity #Thermal resistance #Wafer bonding #Automotive engineering #LED lamps #Dentistry #Curing #Lighting #Gallium arsenide
A 1.5 /spl mu/m GaInNAs(Sb) laser grown on GaAs by MBE
- Trang 139-140
We have varied growth parameters including group III and V growth rates, Sb
flux, and N concentration, in the MBE growth of GaInAs(Sb)/GaAs quantum well
lasers. We have found that it is possible to maintain high photoluminescence
intensity for samples above 1.5 /spl mu/m. By introducing the optimum Sb flux
and cracking temperature, In incorporation up to 50% becomes possible. To our
knowledge, thi...
#Gallium arsenide #Optical waveguides #Waveguide lasers #Pump lasers #Stimulated emission #Quantum well lasers #Molecular beam epitaxial growth #Substrates #Optical pumping #Semiconductor optical amplifiers