A novel variational approach for modeling sub-0.1 micron MOS devices including Quantum Mechanical interface charge confinement effects
60th DRC. Conference Digest Device Research Conference - Trang 59-60
Tóm tắt
In this work we develop and demonstrate a novel variational methodology for modeling deep sub-micron (10 nm-100 nm) three-dimensional (3D) MOS devices that includes the important Quantum Mechanical (QM) interface charge confinement effect.
Từ khóa
#MOS devices #Quantum mechanics #Threshold voltage #Capacitance #Fluctuations #Electrostatics #Doping #Poisson equations #Matter waves #Semiconductor process modelingTài liệu tham khảo
asenov, 1998, Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Sub 0.1 µm MOSFETs: A 3-D “Atomistic” Simulation Study, IEEE Transactions on Electron Devices, 45, 10.1109/16.735728
10.1109/IEDM.1999.824210
10.1016/0038-1101(89)90060-9
10.1063/1.3051743