Room temperature grown zirconia/SiO/sub 2/ dielectric stacks with 1 nm EOT
60th DRC. Conference Digest Device Research Conference - Trang 101-102
Tóm tắt
Metal-oxide films such as zirconia and hafnia are currently being investigated to replace silicon dioxide as the gate dielectric material in future CMOS devices. It is important to develop processing science to grow these dielectric films of high electrical quality. Previously, we have grown zirconia films by ultraviolet ozone oxidation (UVO) on chemical oxide with electrical thickness ranging from 1.6 - 2.0 nm. In this study, the UVO method has been used to grow both ultra-thin zirconia films and sub-nanometer thick SiO/sub 2/ films at room temperature.
Từ khóa
#Temperature #Voltage #Stress #Semiconductor films #Dielectric thin films #Leakage current #Silicon #Dielectric films #Oxidation #Materials science and technologyTài liệu tham khảo
gusev, 0, IEDM 2001, 451
ramanathan, 2002, Submitted to Applied Physics Letters
chavez, 2001, J Appl Phys 90, 4284, 10.1063/1.1401796
houssa, 2001, Appl Phy Lett, 79, 3134, 10.1063/1.1415401
lo, 1997, IEEE Elec Dev Lett, 18, 10.1109/55.568766
ramanathan, 2001, Appl Phys Lett 79