Impact of NH/sub 3/ pre-treatment on the electrical and reliability characteristics of ultra thin hafnium silicate films prepared by re-oxidation method
S. Gopalan1, R. Choi1, K. Onishi1, R. Nieh1, C.S. Kang1, H.-J. Cho1, S. Krishnan1, J.C. Lee1
1Microelectronic Research Center, University of Texas, Austin, Austin, TX, USA
Tóm tắt
The trade-offs between the benefits of NH/sub 3/ pre-treatment such as improved scalability, lower leakage and higher breakdown fields, and potential issues such as large hysteresis, degraded MOSFET characteristics and poorer reliability on Hf-silicate devices have been studied.