Demonstration of FinFET CMOS circuits
60th DRC. Conference Digest Device Research Conference - Trang 47-48
Tóm tắt
We present, to our knowledge, the first published experimental demonstration of a CMOS inverter chain built from FinFETs, completely integrated in 180nm CMOS technology, using one level of copper wiring and tungsten vias. A four-stage inverter chain with Lgate = 200nm, Tsi =, 60nm, and Tox = 2.2nm was run at 1.5V. We demonstrate successfully propagating CMOS levels through four inverter stages employing over 300 fins.
Từ khóa
#FinFETs #Circuits #Inverters #CMOS technology #Etching #Electrodes #Implants #Silicides #Tungsten #VoltageTài liệu tham khảo
10.1109/55.320976
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