Graph-based quantum integrated circuits using III-V mulch-branch nanowire networks and their nano-Schottky gate control
60th DRC. Conference Digest Device Research Conference - Trang 103-104
Tóm tắt
Beyond the scaling limit of Si CMOS LSls, one envisages nanoelectronics based on quantum devices. To realize quantum LSls (Q-LSIs), however, a novel architecture is required that is suitable to non-robust and charge-sensitive quantum devices which manipulate a single or a few electrons. The cascaded logic gate architecture in Si LSIs is utterly unsuitable. The purpose of this paper is to propose a graph-based Q-LSI architecture and to investigate its basic feasibility by forming of high-density GaAs-based and InP-based multi-branch nanowire networks and controlling them by nanometer-scale Schottky gates.
Từ khóa
#III-V semiconductor materials #Indium gallium arsenide #Nanoscale devices #Etching #Gallium arsenide #Electrons #Logic functions #Wire #Chemicals #Data structuresTài liệu tham khảo
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