Graph-based quantum integrated circuits using III-V mulch-branch nanowire networks and their nano-Schottky gate control

S. Kasai1, M. Yumoto1, T. Fukushi1, T. Muranaka1, H. Hasegawa1
1Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo, Japan

Tóm tắt

Beyond the scaling limit of Si CMOS LSls, one envisages nanoelectronics based on quantum devices. To realize quantum LSls (Q-LSIs), however, a novel architecture is required that is suitable to non-robust and charge-sensitive quantum devices which manipulate a single or a few electrons. The cascaded logic gate architecture in Si LSIs is utterly unsuitable. The purpose of this paper is to propose a graph-based Q-LSI architecture and to investigate its basic feasibility by forming of high-density GaAs-based and InP-based multi-branch nanowire networks and controlling them by nanometer-scale Schottky gates.

Từ khóa

#III-V semiconductor materials #Indium gallium arsenide #Nanoscale devices #Etching #Gallium arsenide #Electrons #Logic functions #Wire #Chemicals #Data structures

Tài liệu tham khảo

kasai, 2000, IEDM Tech Dig 2000, 585 10.1143/JJAP.36.1678 hasegawa, 1999, MRS Bulletin, 24, 25, 10.1557/S0883769400052866