RF noise in deep sub-/spl mu/m MOSFETs and proposed solution

Anomalous dependence of finger number on noise figure (NF) is observed for 0.18 /spl mu/m and 0.13 /spl mu/m MOSFETs. A lowest NF of 0.93 dB is measured for 0.18 /spl mu/m MOSFET at 5.8 GHz using 50 fingers but increases with either increasing or decreasing finger number. The NF of 0.13 /spl mu/m devices have larger value and continuously decreases with increasing finger number. This is due to the combined effect of reducing gate resistance and increasing substrate loss with increasing finger number.