Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials

This paper reports on the history of microelectromechanical devices and microsystem technologies. In the list of mostly important advantages of the XX century the appearance of new direction of technology have stayed almost unnoticed. In American literature, "the MEMS is the way making things" (Maluf, 2000). The "things" can be quite various. They can perceive the information (to make sensing) to proceed it and to have an effort on physical parameters of the macro system (to make actuation). The Microsystem technology have, at least, three main advantages, they are: 1) the technology of mass production of more and more complex systems with simultaneous decreasing of the cost and increasing the reliability; 2) the interdisciplinary technology which allows to generalize in the single chip or system the various fields of science and technology; and 3) the third and main advantage consists in the fact that the microsystem technology provides the production of samples. In this paper, the main attention will be devoted to actuators.

The construction and circuitry realization of the combined pressure-temperature sensor based on the shear piezoresistive effect (SPE) are developed and presented in this paper. The four-terminal silicon transducer (FTT) is used as main sensitive element. The construction of the sensor allows making the adequate measuring of the blood pressure, body temperature and pulse. The circuit of this sensor allows measuring these parameters with good accuracy. The digital output provides the comfort for patient and operator.

The physics processes that take place in the multifunctional thermoresistive transducer were considered. For presented processes it was proposed to synthesize the structures based on principles of the quasianalog modeling and to use these structures for the theoretical model for the determination of the deformations in the base sensitive element of the transducer, solution the equation of the stability and the thermostability of the dielectric membrane of the sensitive element.

In the work the temperature dependences of the fibre-optical sensor of mechanical values are explored. The examinations of influence of temperature changes on the transmitting characteristic of FOS were spend. As a sensing device the silicon membrane with width h1=40 micron with strong centre by width h3=200 micron was used. The measuring were spend at temperatures T1=20/spl deg/C, T2=60/spl deg/C, T3=90/spl deg/C. The estimation of values of responsive, nonlinearity and hysteresis was explored.

The microconverter construction and its fabrication process route designed. The approaching technological materials are selected. The heat fluxes and electrical performances simulations of the device are worked out. All fabrication operations, according to a process route are developed. Experimental samples are explored and results compared with a performance of secondary etalon. On the basis of obtained data the indispensable changes are introduced in to the microconverter construction. The upgraded thermoelectric converter at present of time is made according to an improved process route.

Etched tracks have recently come into the focus of renewed interest, as it has turned out that they have a great future application potential. Therefore it is worthwhile to review the techniques for ion track characterization. Especially, ion transmission spectrometry (ITS) has recently emerged as a new tool for the rapid characterization of both the average diameter and the shape of etched tracks as presented in J. Vacik et al. (1997) and J. Vacik et al. (1999). In this paper a simple formula for the correlation between the ion transmission yield and the track diameter is derived for cylindrical tracks under the impact of both parallel and divergent probing ion beams. Increasing beam divergence leads to a slight decrease of the transmission yield for small, and to a considerable enhancement of the track transmission for larger capillaries. Direct track radius determinations by scanning electron microscopy (SEM) are compared with our ITS calculations with good result.

Using Monte Carlo simulation atomic interlayer diffusion influence on the morphology of vicinal surfaces during MBE was investigated. Mechanism of 3D island formation on the surfaces with steps and echelons of steps was suggested. It was revealed, that for heterosystems with predominating atomic transport from island edge to the upper layers, 3D islands are formed on vicinal surfaces with very narrow terraces.

The opportunity for measurement of X-ray spectra with the help of carbon nanotubes cathode was realized. The K/spl alpha/-spectra of the carbon, which was transferred on the copper anode as a result of field emission from cathodes containing multiwall and single-wall carbon nanotubes, was obtained. The carbon materials were found to consist from graphite-like particles. The spectrum of carbon material produced at the destruction of the cathode from single-wall nanotubes showed an enhanced intensity in the short-wave region that is indicative of stronger localization of x-electrons. The reason of such localization is likely to be due to the small size of the transferred particles.

Here we present our investigations on Al/SiO/sub 2//Si structures with Si nanocrystals embedded into the oxide layer. Nanocrystals were formed by implantation of Si ions with following high temperature annealing in N/sub 2/ ambient. Capacitance-voltage characteristics (C-V) were measured at frequencies varied from 1 to 145 kHz at room temperature. Maximum in capacitance characteristics was observed at voltages corresponding accumulation condition at near surface area of semiconductor. Such features are usually explained by discrete level of surface states. The maximum capacitance amount and its correlation with capacitance value at accumulation conditions were found to depend on frequency.

The experimental results are presented for silicon flowmeter in a range of gas range 20 - 1000 1/h.