Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials

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Calculation of z/sub 12/ resistance for the FTSP transducer as an element of external electrical circuit
Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Tập 1 - Trang 5 pp. - 2002
A.V. Gridchin
The analytical equation for calculation of z/sub 12/ resistance of the four-terminal silicon pressure piezotransducer (FTSP transducer) is presented in this paper. The main stages of this calculation in accordance with this equation are described in details. The elastic element (EE) with silicon crystal planes (100) and [110], p- and n-types of conductivity, and various ratios of length to width a... hiện toàn bộ
#Electric resistance #Transducers #Tensile stress #Silicon #Conductivity #Nonlinear equations #Piezoresistance #Capacitive sensors #Doping
Temperature dependences of fibre-optical sensors of mechanical values
Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Tập 1 - Trang 3 pp. - 2002
A.D. Bialik, I.A. Voronin, A.M. Zlobin
In the work the temperature dependences of the fibre-optical sensor of mechanical values are explored. The examinations of influence of temperature changes on the transmitting characteristic of FOS were spend. As a sensing device the silicon membrane with width h1=40 micron with strong centre by width h3=200 micron was used. The measuring were spend at temperatures T1=20/spl deg/C, T2=60/spl deg/C... hiện toàn bộ
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
Micromechanical calibrating leak made by methods of microtechnologies
Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Tập 1 - Trang 2 pp. - 2002
A.V. Pakkonen
The helium leak construction and technological route of its fabrication are presented. The set of devices was made and their characteristics were investigated. There are supposed to use fabricated devices as the standard at calibration helium detectors.
#Micromechanical devices #Helium #Manufacturing #Biomembranes #Calibration #Leak detection #Detectors #Anisotropic magnetoresistance #Research and development #Laboratories
The investigation of main characteristics of membrane thermal sensors based on silicon
Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Tập 1 - Trang 3 pp. - 2002
T.A. Apasova, O.V. Lobach, M.V. Popova, A.A. Poplavnoy
The silicon thermoelectrical sensor measuring small heat flows has been designed. The first test party has been fabricated. Sensor test methods have been developed and carried out, topology defects have been reveal. Output characteristics of the sensor have been received.
#Biomembranes #Sensor phenomena and characterization #Thermal sensors #Silicon #Testing #Temperature sensors #Thermal resistance #Fluid flow measurement #Voltage #Topology
Features of anisotropic etching of silicon
Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Tập 1 - Trang 2 pp. - 2002
R.P. Dikareva, A.V. Kamenskaja, D.A. Langueva, S.V. Zaozyornova
The purpose of our work is to research of the process of AE of Si plates with orientation {100} and {110}, and also consideration of dynamics of change of the etched figure's form, dependence on their form of a concrete mask, dependence of speeds of etching on concentration etchant and its temperatures. Experimental results compared to results of modeling with the purpose of a correcting the progr... hiện toàn bộ
#Anisotropic magnetoresistance #Etching #Silicon #Spirals #Temperature dependence #Water heating #Microelectronics #Chemicals #Concrete #Laboratories
Design and optimization of the thermovision microscope
Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Tập 1 - Trang 3 pp. - 2002
A.S. Larshin
Application of a receiving device on basis InAs, for a thermovision microscopy is studied. The device designed and made in an ISP of the Siberian Branch of the Russian Academy of Science, fundamental parameters: dimensionality 128/spl times/128, a step 50 microns, a range of lengths of waves 2.5-3 microns. For decrease of a background radiation from warm parts of a case of the device it is offered... hiện toàn bộ
#Design optimization #Mirrors #Semiconductor devices #Testing #Temperature distribution #Cameras #Optical microscopy #Semiconductor device measurement #Thermal expansion #Optical imaging
Determination of the transport parameters in two-dimensional semiconductor systems and thin films by contactless microwave methods
Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Tập 1 - Trang 75-76 - 2002
A.A. Kornilovich
The results of theoretical and experimental study of Shubnikov-de Haas effect and cyclotron resonance by microwave methods (/spl omega//2/spl pi/=37.8GHz) in AlGaAs/GaAs heterostructures are presented. The theoretical expressions for the determination of the carrier concentration and mobility are obtained. With these data, the transport parameters in two-dimensional systems and thin films can be d... hiện toàn bộ
#Semiconductor thin films #Gallium arsenide #Microwave theory and techniques #Cyclotrons #Magnetic resonance #Power measurement #Electron optics #Optical films #Optical superlattices #Reflectivity
Magnetotransport properties of two-dimensional electron gas on cylindrical surface
Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Tập 1 - Trang 3 pp. - 2002
A.B. Vorob'ev, V.Ya. Prinz, A.I. Toropov, J.S. Yukecheva
The present work examines the transport properties of a 2D electron gas on a cylindrical surface placed into an external magnetic field. The test structures were obtained by directional rolling of a strained heterofilm. On these structures, magnetotransport measurements in quantizing magnetic fields at helium temperatures were performed. Differences in the field-intensity dependences of the magnet... hiện toàn bộ
#Magnetic properties #Electrons #Substrates #Magnetic fields #Molecular beam epitaxial growth #Gallium arsenide #Surface resistance #Magnetic semiconductors #Physics #Testing
Tunneling of electrons through heterostructures with quantum rings in a magnetic field
Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Tập 1 - Trang 3 pp. - 2002
V.M. Kovalev, A.V. Chaplik
Tunneling current of electrons through a quantum ring placed in a barrier of InAs/GaAs in the presence of Aaronov-Bohm magnetic flux is calculated. It is shown that tunneling current has oscillation behavior in dependence on magnetic flux through the quantum ring. It is considered two cases: solenoid model and uniform magnetic field one. In the second model tunneling current of electrons is aperio... hiện toàn bộ
#Magnetic tunneling #Electrons #Magnetic fields #Solenoids #Energy states #Magnetic flux #Impurities #Magnetic resonance #Voltage #Wave functions
Autoemission properties of carbon nanotubes
Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Tập 1 - Trang 2 pp. - 2002
P.A. Pruss, A.V. Gusel'nikov, A.G. Kudashov, A.V. Okotrub
Autoemission properties of the materials containing carbon nanotubes are investigated. Unique physical and chemical properties of these materials have allowed obtaining a significant current of emitted electrons at rather low applied electric fields. Automation of process of measurement has revealed the hysteresis-like voltage-current characteristic at sawtooth display of a voltage both for pure c... hiện toàn bộ
#Carbon nanotubes #Cathodes #Voltage #Carbon dioxide #Organic materials #Displays #Anodes #Chemistry #Chemicals #Electron emission
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