Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials

This paper reports on the trends in development of quantum computer, QC. The assumed advantage of QC in comparison with the standard computer is that the QC works not with digits but with the quantum states. Also, the advantage of QC over the DECM consists in the quantum parallelism and comes from the exponential space of states of the number of cubits. As a single cubit can be in the state of superposition of 0 and 1 states, the register of n cubits can be in the state of superposition of all 2/sup n/ possible states. The requirements to the construction of the QC are: 1) necessity of assembly (register) of cubits; 2) necessity of constant magnetic field; and 3) necessity of low temperatures.

The research of the process of plasma etching of silicon in plasma CF/sub 2/Cl/sub 2/>/O/sub 2/ is carried out with the equipment of "Plasma-600". The covering of quartz walls of the reactor with fluorine polymer results in increasing the speed of etching. The increasing of the concentration of chemically active particles (CAP) observed in experiment, testifies to decreasing the probability of destruction of CAP 10 times less as a result of one collision with the surface of the reactor covered with the fluorine polymer.

Presents an index of the authors whose papers are published in the conference.

Combination A/sup III/B/sup V/ direct-band semiconductor materials with silicon is the way to create light-emitting devices on silicon basis. In present paper was made an attempt to obtain InAs nanocrystals inside the porous silicon (PS) channels by means of molecular-beam epitaxy (MBE). InAs grows provided in A/sup III/B/sup V/ MBE reactor on silicon substrate with porous layer. Porous silicon substrate was formed through electrochemical etching, general porosity was /spl sim/55%, porous layer thickness 500 nm and average pore size 10-13 nm.

The topmost surface of crystal during Ti-indiffused LiNbO/sub 3/ waveguide preparation was studied using atomic force microscopy and high energy electron diffraction. The formation of the flat terraces with height step /spl sim/0.24nm as a result of high temperature annealing has been detected. The global changing of surface morphology induced by Ti diffusing was observed. No new phase formation on the surface was detected.

In the work the temperature dependences of the fibre-optical sensor of mechanical values are explored. The examinations of influence of temperature changes on the transmitting characteristic of FOS were spend. As a sensing device the silicon membrane with width h1=40 micron with strong centre by width h3=200 micron was used. The measuring were spend at temperatures T1=20/spl deg/C, T2=60/spl deg/C, T3=90/spl deg/C. The estimation of values of responsive, nonlinearity and hysteresis was explored.

Based un three-band spectrum model taking into account main scattering mechanisms the concentration dependencies of linear piezoresistance coefficients in p-Ge/sub x/Si/sub 1-x/ alloys were calculated. It is shown that the piezoresistance dependence upon the alloy composition X has a non-monotonous character.

Structures Al/CaF/sub 2//Si has been grown by method of the molecular-beam epitaxy (MBE) with thickness of film CaF/sub 2/ from 0.1 up to 0.5 /spl mu/m. Current-voltage characteristic (CVC) of Al/CaF/sub 2//Si structures before and after influence of radiation has been presented. It has been shown that the radiation has increased a current, but has not changed the mechanism of conductivity.

The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO/sub 2/ films has been studied. For the films implanted with Si/sup +/ ions to total doze of 4.8 /spl middot/ 10/sup 16/ cm/sup -2/ a high temperature annealing (T/sub a/=1 000/spl deg/C) under high hydrostatic pressure (12 Kbar) causes a "blue" shift and increase intensity of the photoluminescence band attributed to silicon nanocrystals.

In paper the outcomes of 3-dimensional simulation of an anisotropic electrical conductivity originating at deformation of n-silicon are reduced. Is shown, that the application of the space 19-dot template of digitization allows to take into account changes x-, y-, and z-components of field strength in all three space directions. As an example the dependences of an output voltage transversal sensor of a unit from monoaxial mechanical power are presented.