Features of anisotropic etching of silicon
Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Tập 1 - Trang 2 pp. - 2002
Tóm tắt
The purpose of our work is to research of the process of AE of Si plates with orientation {100} and {110}, and also consideration of dynamics of change of the etched figure's form, dependence on their form of a concrete mask, dependence of speeds of etching on concentration etchant and its temperatures. Experimental results compared to results of modeling with the purpose of a correcting the program AE developed earlier on faculty of SD a ME.
Từ khóa
#Anisotropic magnetoresistance #Etching #Silicon #Spirals #Temperature dependence #Water heating #Microelectronics #Chemicals #Concrete #LaboratoriesTài liệu tham khảo
orwada, 1995, Depth Uniformization in (110) Si Anisotropic Etching by Ultrasonic Wave and Application to Accelerometer Fabrication, Proceedings of the IEEE Micro Electro Mechanical Systems Conference
10.1149/1.2086277
armbrister, 2000, Research of dynamics of change of the form of figures of anisotropic etching Si with the help of computer modelling, Computer Science and Problems of Telecommunications, 143