Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials
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Temperature dependences of fibre-optical sensors of mechanical values
Tập 1 - Trang 3 pp. - 2002
In the work the temperature dependences of the fibre-optical sensor of mechanical values are explored. The examinations of influence of temperature changes on the transmitting characteristic of FOS were spend. As a sensing device the silicon membrane with width h1=40 micron with strong centre by width h3=200 micron was used. The measuring were spend at temperatures T1=20/spl deg/C, T2=60/spl deg/C...... hiện toàn bộ
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
Problems of semiconductor element base for the quantum computer
Tập 1 - Trang 5 pp. - 2002
This paper reports on the trends in development of quantum computer, QC. The assumed advantage of QC in comparison with the standard computer is that the QC works not with digits but with the quantum states. Also, the advantage of QC over the DECM consists in the quantum parallelism and comes from the exponential space of states of the number of cubits. As a single cubit can be in the state of sup...... hiện toàn bộ
#Quantum computing #Quantum mechanics #Physics computing #Parallel processing #Computational modeling #Electrons #Mechanical factors #Differential equations #Cryptography #Tensile stress
Characterization of etched tracks and nanotubules by ion transmission spectrometry
Tập 1 - Trang 4 pp. - 2002
Etched tracks have recently come into the focus of renewed interest, as it has turned out that they have a great future application potential. Therefore it is worthwhile to review the techniques for ion track characterization. Especially, ion transmission spectrometry (ITS) has recently emerged as a new tool for the rapid characterization of both the average diameter and the shape of etched tracks...... hiện toàn bộ
#Etching #Spectroscopy #Particle beams #Target tracking #Particle beam measurements #Physics #Scanning electron microscopy #Particle measurements #Polymers #Solid state circuits
The 3D-model of anisotropic conductivity in the strained n-silicon
Tập 1 - Trang 3 pp. - 2002
In paper the outcomes of 3-dimensional simulation of an anisotropic electrical conductivity originating at deformation of n-silicon are reduced. Is shown, that the application of the space 19-dot template of digitization allows to take into account changes x-, y-, and z-components of field strength in all three space directions. As an example the dependences of an output voltage transversal sensor...... hiện toàn bộ
#Anisotropic magnetoresistance #Conductivity #Tensile stress #Laplace equations #Silicon #Tellurium #Voltage #Mechanical sensors #Couplings #Effective mass
X-ray spectroscopic study of carbon produced at destruction of field cathodes from carbon nanotubes
Tập 1 - Trang 2 pp. - 2002
The opportunity for measurement of X-ray spectra with the help of carbon nanotubes cathode was realized. The K/spl alpha/-spectra of the carbon, which was transferred on the copper anode as a result of field emission from cathodes containing multiwall and single-wall carbon nanotubes, was obtained. The carbon materials were found to consist from graphite-like particles. The spectrum of carbon mate...... hiện toàn bộ
#Spectroscopy #Cathodes #Carbon nanotubes #Carbon dioxide #Anodes #X-ray imaging #Copper #Electrons #Dielectric materials #Fasteners
Micromechanical thermal converter of power alternating current
Tập 1 - Trang 3 pp. - 2002
The microconverter construction and its fabrication process route designed. The approaching technological materials are selected. The heat fluxes and electrical performances simulations of the device are worked out. All fabrication operations, according to a process route are developed. Experimental samples are explored and results compared with a performance of secondary etalon. On the basis of o...... hiện toàn bộ
#Micromechanical devices #Thermoelectricity #Resistance heating #Voltage #Thermal resistance #Thermal conductivity #Electric variables measurement #Wire #Manufacturing processes #Mechanical sensors
The investigation of main characteristics of membrane thermal sensors based on silicon
Tập 1 - Trang 3 pp. - 2002
The silicon thermoelectrical sensor measuring small heat flows has been designed. The first test party has been fabricated. Sensor test methods have been developed and carried out, topology defects have been reveal. Output characteristics of the sensor have been received.
#Biomembranes #Sensor phenomena and characterization #Thermal sensors #Silicon #Testing #Temperature sensors #Thermal resistance #Fluid flow measurement #Voltage #Topology
Calculation of z/sub 12/ resistance for the FTSP transducer as an element of external electrical circuit
Tập 1 - Trang 5 pp. - 2002
The analytical equation for calculation of z/sub 12/ resistance of the four-terminal silicon pressure piezotransducer (FTSP transducer) is presented in this paper. The main stages of this calculation in accordance with this equation are described in details. The elastic element (EE) with silicon crystal planes (100) and [110], p- and n-types of conductivity, and various ratios of length to width a...... hiện toàn bộ
#Electric resistance #Transducers #Tensile stress #Silicon #Conductivity #Nonlinear equations #Piezoresistance #Capacitive sensors #Doping
Prospects of SOI technology evolution
Tập 1 - Trang 5 pp. - 2002
Today in Russia there are good prospects for creating The SOI Program on producing custom integrated chips on SOI structures basis, which provide complete dialectical isolation of IC elements. SOF and SI-SOPS structures should become the basis for The SOI Program realization. The quality of silicon layers of SOF and SI-SOPS structures makes possible in producing high-quality chips on their basis b...... hiện toàn bộ
#Isolation technology #CMOS technology #Insulation #P-n junctions #Costs #Manufacturing #Silicon #Dielectric substrates #Consumer electronics #Electronics industry
Design and optimization of the thermovision microscope
Tập 1 - Trang 3 pp. - 2002
Application of a receiving device on basis InAs, for a thermovision microscopy is studied. The device designed and made in an ISP of the Siberian Branch of the Russian Academy of Science, fundamental parameters: dimensionality 128/spl times/128, a step 50 microns, a range of lengths of waves 2.5-3 microns. For decrease of a background radiation from warm parts of a case of the device it is offered...... hiện toàn bộ
#Design optimization #Mirrors #Semiconductor devices #Testing #Temperature distribution #Cameras #Optical microscopy #Semiconductor device measurement #Thermal expansion #Optical imaging