Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials
Cơ quản chủ quản: N/A
Các bài báo tiêu biểu
Temperature dependences of fibre-optical sensors of mechanical values
Tập 1 - Trang 3 pp. - 2002
In the work the temperature dependences of the fibre-optical sensor of mechanical values are explored. The examinations of influence of temperature changes on the transmitting characteristic of FOS were spend. As a sensing device the silicon membrane with width h1=40 micron with strong centre by width h3=200 micron was used. The measuring were spend at temperatures T1=20/spl deg/C, T2=60/spl deg/C......
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
The investigation of main characteristics of membrane thermal sensors based on silicon
Tập 1 - Trang 3 pp. - 2002
The silicon thermoelectrical sensor measuring small heat flows has been designed. The first test party has been fabricated. Sensor test methods have been developed and carried out, topology defects have been reveal. Output characteristics of the sensor have been received.
#Biomembranes #Sensor phenomena and characterization #Thermal sensors #Silicon #Testing #Temperature sensors #Thermal resistance #Fluid flow measurement #Voltage #Topology
The 3D-model of anisotropic conductivity in the strained n-silicon
Tập 1 - Trang 3 pp. - 2002
In paper the outcomes of 3-dimensional simulation of an anisotropic electrical conductivity originating at deformation of n-silicon are reduced. Is shown, that the application of the space 19-dot template of digitization allows to take into account changes x-, y-, and z-components of field strength in all three space directions. As an example the dependences of an output voltage transversal sensor......
#Anisotropic magnetoresistance #Conductivity #Tensile stress #Laplace equations #Silicon #Tellurium #Voltage #Mechanical sensors #Couplings #Effective mass
The device of digital data processing from the fibre-optical sensor of mechanical values
Tập 1 - Trang 2 pp. - 2002
In the work the creation of the device of digital signal processing from the fibre-optical sensor of mechanical values is featured. The device allows to spend measurements and to produce adjustment of the sensor remotely and with a big degree of accuracy. The device connects to a PC on a three-wire line of link with usage of the standard transfer protocol of data RS-232C. The scheme is implemented......
#Data processing #Optical fiber devices #Optical fiber sensors #Mechanical sensors #Mechanical variables control #Electric variables control #Digital signal processing #Temperature sensors #Signal design #Microcontrollers
Surface structure and optical properties of Ti-diffused LiNbO/sub 3/ waveguides
Tập 1 - Trang 2 pp. - 2002
The topmost surface of crystal during Ti-indiffused LiNbO/sub 3/ waveguide preparation was studied using atomic force microscopy and high energy electron diffraction. The formation of the flat terraces with height step /spl sim/0.24nm as a result of high temperature annealing has been detected. The global changing of surface morphology induced by Ti diffusing was observed. No new phase formation o......
#Surface structures #Optical surface waves #Surface morphology #Optical waveguides #Atomic force microscopy #Atom optics #Electron optics #Surface waves #Electron microscopy #Optical diffraction
Influence of radiation on current-voltage characteristics of CaF/sub 2//Si heterostructures
Tập 1 - Trang 2 pp. - 2002
Structures Al/CaF/sub 2//Si has been grown by method of the molecular-beam epitaxy (MBE) with thickness of film CaF/sub 2/ from 0.1 up to 0.5 /spl mu/m. Current-voltage characteristic (CVC) of Al/CaF/sub 2//Si structures before and after influence of radiation has been presented. It has been shown that the radiation has increased a current, but has not changed the mechanism of conductivity.
#Voltage #Molecular beam epitaxial growth #Dielectrics #Silicon #Electrical resistance measurement #Lattices #Temperature #Current measurement #Conductivity #Calcium
Mathematical model of predicting and managing radio transmitting devices manufacturing risk
Tập 1 - Trang 2 pp. - 2002
The mathematical probability-based model of predicting and managing radio transmitting devices manufacturing risk is described.
#Mathematical model #Radio spectrum management #Risk management #Virtual manufacturing #Cutoff frequency #Circuits #Consumer electronics #Risk analysis #Impedance matching #Workability
Index of authors
Tập 1 - Trang 133-133 - 2002
Presents an index of the authors whose papers are published in the conference.
Prospects of SOI technology evolution
Tập 1 - Trang 5 pp. - 2002
Today in Russia there are good prospects for creating The SOI Program on producing custom integrated chips on SOI structures basis, which provide complete dialectical isolation of IC elements. SOF and SI-SOPS structures should become the basis for The SOI Program realization. The quality of silicon layers of SOF and SI-SOPS structures makes possible in producing high-quality chips on their basis b......
#Isolation technology #CMOS technology #Insulation #P-n junctions #Costs #Manufacturing #Silicon #Dielectric substrates #Consumer electronics #Electronics industry
Micromechanical calibrating leak made by methods of microtechnologies
Tập 1 - Trang 2 pp. - 2002
The helium leak construction and technological route of its fabrication are presented. The set of devices was made and their characteristics were investigated. There are supposed to use fabricated devices as the standard at calibration helium detectors.
#Micromechanical devices #Helium #Manufacturing #Biomembranes #Calibration #Leak detection #Detectors #Anisotropic magnetoresistance #Research and development #Laboratories