Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials
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Temperature dependences of fibre-optical sensors of mechanical values
Tập 1 - Trang 3 pp. - 2002
In the work the temperature dependences of the fibre-optical sensor of mechanical values are explored. The examinations of influence of temperature changes on the transmitting characteristic of FOS were spend. As a sensing device the silicon membrane with width h1=40 micron with strong centre by width h3=200 micron was used. The measuring were spend at temperatures T1=20/spl deg/C, T2=60/spl deg/C......
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
Peculiarities of 3D nanoisland formation on vicinal surfaces during MBE process (simulation)
Tập 1 - Trang 3 pp. - 2002
Using Monte Carlo simulation atomic interlayer diffusion influence on the morphology of vicinal surfaces during MBE was investigated. Mechanism of 3D island formation on the surfaces with steps and echelons of steps was suggested. It was revealed, that for heterosystems with predominating atomic transport from island edge to the upper layers, 3D islands are formed on vicinal surfaces with very nar......
#Surface morphology #Atomic layer deposition #Lattices #Capacitive sensors #Substrates #Atomic measurements #Stress #Gold #Temperature #Physics
Losing of the chemically active particles in plasma CF/sub 2/Cl/sub 2//O/sub 2/
Tập 1 - Trang 2 pp. - 2002
The research of the process of plasma etching of silicon in plasma CF/sub 2/Cl/sub 2/>/O/sub 2/ is carried out with the equipment of "Plasma-600". The covering of quartz walls of the reactor with fluorine polymer results in increasing the speed of etching. The increasing of the concentration of chemically active particles (CAP) observed in experiment, testifies to decreasing the probability of des......
#Chemicals #Plasma chemistry #Plasma applications #Inductors #Etching #Polymers #Silicon #Plasma temperature #Testing #Equations
Cấu trúc và hiện thực hóa mạch của cảm biến áp suất-nhiệt độ kết hợp dựa trên hiệu ứng piezoresistive cắt Dịch bởi AI
Tập 1 - Trang 5 pp. - 2002
Bài báo này phát triển và trình bày về cấu trúc và hiện thực hóa mạch của cảm biến áp suất-nhiệt độ kết hợp dựa trên hiệu ứng piezoresistive cắt (SPE). Cảm biến silicon bốn cực (FTT) được sử dụng làm yếu tố nhạy cảm chính. Cấu trúc của cảm biến cho phép đo đạt yêu cầu huyết áp, nhiệt độ cơ thể và nhịp tim. Mạch của cảm biến này cho phép đo các thông số này với độ chính xác tốt. Đầu ra kỹ thuật số ......
#Temperature sensors #Piezoresistance #Silicon #Bridge circuits #Stress #Water heating #Pulse measurements #Sensor phenomena and characterization #Topology #Surface resistance
Problems of semiconductor element base for the quantum computer
Tập 1 - Trang 5 pp. - 2002
This paper reports on the trends in development of quantum computer, QC. The assumed advantage of QC in comparison with the standard computer is that the QC works not with digits but with the quantum states. Also, the advantage of QC over the DECM consists in the quantum parallelism and comes from the exponential space of states of the number of cubits. As a single cubit can be in the state of sup......
#Quantum computing #Quantum mechanics #Physics computing #Parallel processing #Computational modeling #Electrons #Mechanical factors #Differential equations #Cryptography #Tensile stress
Tunneling of electrons through heterostructures with quantum rings in a magnetic field
Tập 1 - Trang 3 pp. - 2002
Tunneling current of electrons through a quantum ring placed in a barrier of InAs/GaAs in the presence of Aaronov-Bohm magnetic flux is calculated. It is shown that tunneling current has oscillation behavior in dependence on magnetic flux through the quantum ring. It is considered two cases: solenoid model and uniform magnetic field one. In the second model tunneling current of electrons is aperio......
#Magnetic tunneling #Electrons #Magnetic fields #Solenoids #Energy states #Magnetic flux #Impurities #Magnetic resonance #Voltage #Wave functions
Prospects of SOI technology evolution
Tập 1 - Trang 5 pp. - 2002
Today in Russia there are good prospects for creating The SOI Program on producing custom integrated chips on SOI structures basis, which provide complete dialectical isolation of IC elements. SOF and SI-SOPS structures should become the basis for The SOI Program realization. The quality of silicon layers of SOF and SI-SOPS structures makes possible in producing high-quality chips on their basis b......
#Isolation technology #CMOS technology #Insulation #P-n junctions #Costs #Manufacturing #Silicon #Dielectric substrates #Consumer electronics #Electronics industry
2002 Siberian Russian Workshop on Electron Devices and Materials Proceedings (Cat. No.02EX518)
Tập 1 - Trang i - 2002
Presents the front cover of the proceedings record.
Visible photoluminescence from Si nanocrystals fabricated in SiO/sub 2/ films after annealing under hydrostatic pressure
Tập 1 - Trang 3 pp. - 2002
The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO/sub 2/ films has been studied. For the films implanted with Si/sup +/ ions to total doze of 4.8 /spl middot/ 10/sup 16/ cm/sup -2/ a high temperature annealing (T/sub a/=1 000/spl deg/C) under high hydrostatic pressure (12 Kbar) causes a "blue" shift and increase intensity of the photoluminescen......
#Photoluminescence #Nanocrystals #Semiconductor films #Annealing #Silicon #Argon #Physics #Temperature distribution #High definition video #Optical pulses
Index of authors
Tập 1 - Trang 133-133 - 2002
Presents an index of the authors whose papers are published in the conference.