Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials
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Các bài báo tiêu biểu
Temperature dependences of fibre-optical sensors of mechanical values
Tập 1 - Trang 3 pp. - 2002
In the work the temperature dependences of the fibre-optical sensor of
mechanical values are explored. The examinations of influence of temperature
changes on the transmitting characteristic of FOS were spend. As a sensing
device the silicon membrane with width h1=40 micron with strong centre by width
h3=200 micron was used. The measuring were spend at temperatures T1=20/spl
deg/C, T2=60/spl deg/C...
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
Experimental research of silicon flowmeters based on piezoresistance effect
Tập 1 - Trang 3 pp. - 2002
The experimental results are presented for silicon flowmeter in a range of gas
range 20 - 1000 1/h.
#Silicon #Piezoresistance #Piezoresistive devices #Bridge circuits #Pollution measurement #Resistors #Temperature dependence #Temperature distribution #Semiconductor device measurement #Heating
The model of the thermoisolated area of the thermoresistive transducer
Tập 1 - Trang 3 pp. - 2002
The physics processes that take place in the multifunctional thermoresistive
transducer were considered. For presented processes it was proposed to
synthesize the structures based on principles of the quasianalog modeling and to
use these structures for the theoretical model for the determination of the
deformations in the base sensitive element of the transducer, solution the
equation of the stab...
#Thermoresistivity #Transducers #Micromechanical devices #Temperature sensors #Thermal stability #Dielectric substrates #Resistors #Heating #Physics #Humans
Losing of the chemically active particles in plasma CF/sub 2/Cl/sub 2//O/sub 2/
Tập 1 - Trang 2 pp. - 2002
The research of the process of plasma etching of silicon in plasma CF/sub
2/Cl/sub 2/>/O/sub 2/ is carried out with the equipment of "Plasma-600". The
covering of quartz walls of the reactor with fluorine polymer results in
increasing the speed of etching. The increasing of the concentration of
chemically active particles (CAP) observed in experiment, testifies to
decreasing the probability of des...
#Chemicals #Plasma chemistry #Plasma applications #Inductors #Etching #Polymers #Silicon #Plasma temperature #Testing #Equations
Features of anisotropic etching of silicon
Tập 1 - Trang 2 pp. - 2002
The purpose of our work is to research of the process of AE of Si plates with
orientation {100} and {110}, and also consideration of dynamics of change of the
etched figure's form, dependence on their form of a concrete mask, dependence of
speeds of etching on concentration etchant and its temperatures. Experimental
results compared to results of modeling with the purpose of a correcting the
progr...
#Anisotropic magnetoresistance #Etching #Silicon #Spirals #Temperature dependence #Water heating #Microelectronics #Chemicals #Concrete #Laboratories
Cấu trúc và hiện thực hóa mạch của cảm biến áp suất-nhiệt độ kết hợp dựa trên hiệu ứng piezoresistive cắt Dịch bởi AI
Tập 1 - Trang 5 pp. - 2002
Bài báo này phát triển và trình bày về cấu trúc và hiện thực hóa mạch của cảm
biến áp suất-nhiệt độ kết hợp dựa trên hiệu ứng piezoresistive cắt (SPE). Cảm
biến silicon bốn cực (FTT) được sử dụng làm yếu tố nhạy cảm chính. Cấu trúc của
cảm biến cho phép đo đạt yêu cầu huyết áp, nhiệt độ cơ thể và nhịp tim. Mạch của
cảm biến này cho phép đo các thông số này với độ chính xác tốt. Đầu ra kỹ thuật
số ...
#Temperature sensors #Piezoresistance #Silicon #Bridge circuits #Stress #Water heating #Pulse measurements #Sensor phenomena and characterization #Topology #Surface resistance
The investigation of main characteristics of membrane thermal sensors based on silicon
Tập 1 - Trang 3 pp. - 2002
The silicon thermoelectrical sensor measuring small heat flows has been
designed. The first test party has been fabricated. Sensor test methods have
been developed and carried out, topology defects have been reveal. Output
characteristics of the sensor have been received.
#Biomembranes #Sensor phenomena and characterization #Thermal sensors #Silicon #Testing #Temperature sensors #Thermal resistance #Fluid flow measurement #Voltage #Topology
The 3D-model of anisotropic conductivity in the strained n-silicon
Tập 1 - Trang 3 pp. - 2002
In paper the outcomes of 3-dimensional simulation of an anisotropic electrical
conductivity originating at deformation of n-silicon are reduced. Is shown, that
the application of the space 19-dot template of digitization allows to take into
account changes x-, y-, and z-components of field strength in all three space
directions. As an example the dependences of an output voltage transversal
sensor...
#Anisotropic magnetoresistance #Conductivity #Tensile stress #Laplace equations #Silicon #Tellurium #Voltage #Mechanical sensors #Couplings #Effective mass
X-ray spectroscopic study of carbon produced at destruction of field cathodes from carbon nanotubes
Tập 1 - Trang 2 pp. - 2002
The opportunity for measurement of X-ray spectra with the help of carbon
nanotubes cathode was realized. The K/spl alpha/-spectra of the carbon, which
was transferred on the copper anode as a result of field emission from cathodes
containing multiwall and single-wall carbon nanotubes, was obtained. The carbon
materials were found to consist from graphite-like particles. The spectrum of
carbon mate...
#Spectroscopy #Cathodes #Carbon nanotubes #Carbon dioxide #Anodes #X-ray imaging #Copper #Electrons #Dielectric materials #Fasteners
Index of authors
Tập 2 - Trang 105-105 - 2002
Presents an index of the authors whose papers are published in the conference.