Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials
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Temperature dependences of fibre-optical sensors of mechanical values
Tập 1 - Trang 3 pp. - 2002
In the work the temperature dependences of the fibre-optical sensor of
mechanical values are explored. The examinations of influence of temperature
changes on the transmitting characteristic of FOS were spend. As a sensing
device the silicon membrane with width h1=40 micron with strong centre by width
h3=200 micron was used. The measuring were spend at temperatures T1=20/spl
deg/C, T2=60/spl deg/C...
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
IEEE 2002 Siberian Russian Workshop on Electron Devices and Materials Proceedings [front matter]
Tập 2 - Trang i-104 - 2002
Conference proceedings front matter may contain various advertisements, welcome
messages, committee or program information, and other miscellaneous conference
information. This may in some cases also include the cover art, table of
contents, copyright statements, title-page or half title-pages, blank pages,
venue maps or other general information relating to the conference that was part
of the ori...
New mechanism of nanosized InAs grains formation on porous silicon surface
Tập 1 - Trang 2 pp. - 2002
Combination A/sup III/B/sup V/ direct-band semiconductor materials with silicon
is the way to create light-emitting devices on silicon basis. In present paper
was made an attempt to obtain InAs nanocrystals inside the porous silicon (PS)
channels by means of molecular-beam epitaxy (MBE). InAs grows provided in A/sup
III/B/sup V/ MBE reactor on silicon substrate with porous layer. Porous silicon
su...
#Silicon #Substrates #Electrons #Molecular beam epitaxial growth #Crystalline materials #Raman scattering #Spectroscopy #X-ray diffraction #Geometry #Physics
Experimental research of silicon flowmeters based on piezoresistance effect
Tập 1 - Trang 3 pp. - 2002
The experimental results are presented for silicon flowmeter in a range of gas
range 20 - 1000 1/h.
#Silicon #Piezoresistance #Piezoresistive devices #Bridge circuits #Pollution measurement #Resistors #Temperature dependence #Temperature distribution #Semiconductor device measurement #Heating
Surface structure and optical properties of Ti-diffused LiNbO/sub 3/ waveguides
Tập 1 - Trang 2 pp. - 2002
The topmost surface of crystal during Ti-indiffused LiNbO/sub 3/ waveguide
preparation was studied using atomic force microscopy and high energy electron
diffraction. The formation of the flat terraces with height step /spl sim/0.24nm
as a result of high temperature annealing has been detected. The global changing
of surface morphology induced by Ti diffusing was observed. No new phase
formation o...
#Surface structures #Optical surface waves #Surface morphology #Optical waveguides #Atomic force microscopy #Atom optics #Electron optics #Surface waves #Electron microscopy #Optical diffraction
Index of authors
Tập 1 - Trang 133-133 - 2002
Presents an index of the authors whose papers are published in the conference.
The effect of external mechanical stress on the fullerite conductivity
Tập 1 - Trang 5 pp. - 2002
The possibility to use powder consisting of fullerite microcrystals as device
sensitive in external mechanical load is considered. As we suppose the change of
conductivity of fullerite microcrystal powder as function of environmental
mechanical stress is useful for creation of nanoscale devices of sensor
electronics. This new effect based on changing of intermolecular distance
between fullerene mo...
#Stress #Conductivity #Sensor phenomena and characterization #Chemical sensors #Polymers #Mechanical sensors #Silicon #Nanostructured materials #Solids #Dielectrics
Mathematical model of predicting and managing radio transmitting devices manufacturing risk
Tập 1 - Trang 2 pp. - 2002
The mathematical probability-based model of predicting and managing radio
transmitting devices manufacturing risk is described.
#Mathematical model #Radio spectrum management #Risk management #Virtual manufacturing #Cutoff frequency #Circuits #Consumer electronics #Risk analysis #Impedance matching #Workability
X-ray spectroscopic study of carbon produced at destruction of field cathodes from carbon nanotubes
Tập 1 - Trang 2 pp. - 2002
The opportunity for measurement of X-ray spectra with the help of carbon
nanotubes cathode was realized. The K/spl alpha/-spectra of the carbon, which
was transferred on the copper anode as a result of field emission from cathodes
containing multiwall and single-wall carbon nanotubes, was obtained. The carbon
materials were found to consist from graphite-like particles. The spectrum of
carbon mate...
#Spectroscopy #Cathodes #Carbon nanotubes #Carbon dioxide #Anodes #X-ray imaging #Copper #Electrons #Dielectric materials #Fasteners
Peculiarities of 3D nanoisland formation on vicinal surfaces during MBE process (simulation)
Tập 1 - Trang 3 pp. - 2002
Using Monte Carlo simulation atomic interlayer diffusion influence on the
morphology of vicinal surfaces during MBE was investigated. Mechanism of 3D
island formation on the surfaces with steps and echelons of steps was suggested.
It was revealed, that for heterosystems with predominating atomic transport from
island edge to the upper layers, 3D islands are formed on vicinal surfaces with
very nar...
#Surface morphology #Atomic layer deposition #Lattices #Capacitive sensors #Substrates #Atomic measurements #Stress #Gold #Temperature #Physics