thumbnail

Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials

 

 

 

Cơ quản chủ quản:  N/A

Lĩnh vực:

Các bài báo tiêu biểu

Temperature dependences of fibre-optical sensors of mechanical values
Tập 1 - Trang 3 pp. - 2002
A.D. Bialik, I.A. Voronin, A.M. Zlobin
In the work the temperature dependences of the fibre-optical sensor of mechanical values are explored. The examinations of influence of temperature changes on the transmitting characteristic of FOS were spend. As a sensing device the silicon membrane with width h1=40 micron with strong centre by width h3=200 micron was used. The measuring were spend at temperatures T1=20/spl deg/C, T2=60/spl deg/C, T3=90/spl deg/C. The estimation of values of responsive, nonlinearity and hysteresis was explored.
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
The linear piezoresistance effect in p-Ge/sub x/Si/sub 1-x/ alloys
Tập 1 - Trang 3 pp. - 2002
V.P. Dragunov, A.A. Shishkov
Based un three-band spectrum model taking into account main scattering mechanisms the concentration dependencies of linear piezoresistance coefficients in p-Ge/sub x/Si/sub 1-x/ alloys were calculated. It is shown that the piezoresistance dependence upon the alloy composition X has a non-monotonous character.
#Piezoresistance #Silicon alloys #Impurities #Temperature dependence #Optical scattering #Capacitive sensors #Germanium alloys #Acoustic scattering #Fluctuations #Stress
Surface structure and optical properties of Ti-diffused LiNbO/sub 3/ waveguides
Tập 1 - Trang 2 pp. - 2002
I.E. Kalabin, T.I. Grigorieva, L.D. Pokrovsky, D.V. Sheglov, D.I. Shevtsov, V.V. Atuchin
The topmost surface of crystal during Ti-indiffused LiNbO/sub 3/ waveguide preparation was studied using atomic force microscopy and high energy electron diffraction. The formation of the flat terraces with height step /spl sim/0.24nm as a result of high temperature annealing has been detected. The global changing of surface morphology induced by Ti diffusing was observed. No new phase formation on the surface was detected.
#Surface structures #Optical surface waves #Surface morphology #Optical waveguides #Atomic force microscopy #Atom optics #Electron optics #Surface waves #Electron microscopy #Optical diffraction
X-ray spectroscopic study of carbon produced at destruction of field cathodes from carbon nanotubes
Tập 1 - Trang 2 pp. - 2002
A.V. Gusel'nikhov, P.A. Pruss, A.V. Okotrub
The opportunity for measurement of X-ray spectra with the help of carbon nanotubes cathode was realized. The K/spl alpha/-spectra of the carbon, which was transferred on the copper anode as a result of field emission from cathodes containing multiwall and single-wall carbon nanotubes, was obtained. The carbon materials were found to consist from graphite-like particles. The spectrum of carbon material produced at the destruction of the cathode from single-wall nanotubes showed an enhanced intensity in the short-wave region that is indicative of stronger localization of x-electrons. The reason of such localization is likely to be due to the small size of the transferred particles.
#Spectroscopy #Cathodes #Carbon nanotubes #Carbon dioxide #Anodes #X-ray imaging #Copper #Electrons #Dielectric materials #Fasteners
Autoemission properties of carbon nanotubes
Tập 1 - Trang 2 pp. - 2002
P.A. Pruss, A.V. Gusel'nikov, A.G. Kudashov, A.V. Okotrub
Autoemission properties of the materials containing carbon nanotubes are investigated. Unique physical and chemical properties of these materials have allowed obtaining a significant current of emitted electrons at rather low applied electric fields. Automation of process of measurement has revealed the hysteresis-like voltage-current characteristic at sawtooth display of a voltage both for pure carbon nanotubes, and for nanotubes filled by metal particles.
#Carbon nanotubes #Cathodes #Voltage #Carbon dioxide #Organic materials #Displays #Anodes #Chemistry #Chemicals #Electron emission
Determination of the transport parameters in two-dimensional semiconductor systems and thin films by contactless microwave methods
Tập 1 - Trang 75-76 - 2002
A.A. Kornilovich
The results of theoretical and experimental study of Shubnikov-de Haas effect and cyclotron resonance by microwave methods (/spl omega//2/spl pi/=37.8GHz) in AlGaAs/GaAs heterostructures are presented. The theoretical expressions for the determination of the carrier concentration and mobility are obtained. With these data, the transport parameters in two-dimensional systems and thin films can be determined with an accuracy /spl sim/0.5%.
#Semiconductor thin films #Gallium arsenide #Microwave theory and techniques #Cyclotrons #Magnetic resonance #Power measurement #Electron optics #Optical films #Optical superlattices #Reflectivity
Peculiarities of 3D nanoisland formation on vicinal surfaces during MBE process (simulation)
Tập 1 - Trang 3 pp. - 2002
D.V. Brunev, A.N. Karpov, T.Yu. Sisenko, N.L. Shwartz, Z.S. Yanovitskaja
Using Monte Carlo simulation atomic interlayer diffusion influence on the morphology of vicinal surfaces during MBE was investigated. Mechanism of 3D island formation on the surfaces with steps and echelons of steps was suggested. It was revealed, that for heterosystems with predominating atomic transport from island edge to the upper layers, 3D islands are formed on vicinal surfaces with very narrow terraces.
#Surface morphology #Atomic layer deposition #Lattices #Capacitive sensors #Substrates #Atomic measurements #Stress #Gold #Temperature #Physics
Design and optimization of the thermovision microscope
Tập 1 - Trang 3 pp. - 2002
A.S. Larshin
Application of a receiving device on basis InAs, for a thermovision microscopy is studied. The device designed and made in an ISP of the Siberian Branch of the Russian Academy of Science, fundamental parameters: dimensionality 128/spl times/128, a step 50 microns, a range of lengths of waves 2.5-3 microns. For decrease of a background radiation from warm parts of a case of the device it is offered to use a spherical mirror. The radius and a position of a mirror are calculated so that the matrix of a receiving device "saw" only cold (that is - not radiating) parts of a cryostat. Tests have shown its sufficient effectiveness. The background radiation has decreased in 15 times. It has allowed increasing integration time in 9 times and a temperature solution in 8 times. The spatial solution which has made 7 microns is measured. Mathematical handling allows improving this value up to /spl sim/ 4 microns.
#Design optimization #Mirrors #Semiconductor devices #Testing #Temperature distribution #Cameras #Optical microscopy #Semiconductor device measurement #Thermal expansion #Optical imaging
Problems of semiconductor element base for the quantum computer
Tập 1 - Trang 5 pp. - 2002
I.G. Neizvestny
This paper reports on the trends in development of quantum computer, QC. The assumed advantage of QC in comparison with the standard computer is that the QC works not with digits but with the quantum states. Also, the advantage of QC over the DECM consists in the quantum parallelism and comes from the exponential space of states of the number of cubits. As a single cubit can be in the state of superposition of 0 and 1 states, the register of n cubits can be in the state of superposition of all 2/sup n/ possible states. The requirements to the construction of the QC are: 1) necessity of assembly (register) of cubits; 2) necessity of constant magnetic field; and 3) necessity of low temperatures.
#Quantum computing #Quantum mechanics #Physics computing #Parallel processing #Computational modeling #Electrons #Mechanical factors #Differential equations #Cryptography #Tensile stress
Characterization of etched tracks and nanotubules by ion transmission spectrometry
Tập 1 - Trang 4 pp. - 2002
N. Stolterfoht, D. Fink, A. Petrov, M. Muller, J. Vacik, J. Cervena, V. Hnatowicz, L.T. Chadderton, A.S. Berdinsky
Etched tracks have recently come into the focus of renewed interest, as it has turned out that they have a great future application potential. Therefore it is worthwhile to review the techniques for ion track characterization. Especially, ion transmission spectrometry (ITS) has recently emerged as a new tool for the rapid characterization of both the average diameter and the shape of etched tracks as presented in J. Vacik et al. (1997) and J. Vacik et al. (1999). In this paper a simple formula for the correlation between the ion transmission yield and the track diameter is derived for cylindrical tracks under the impact of both parallel and divergent probing ion beams. Increasing beam divergence leads to a slight decrease of the transmission yield for small, and to a considerable enhancement of the track transmission for larger capillaries. Direct track radius determinations by scanning electron microscopy (SEM) are compared with our ITS calculations with good result.
#Etching #Spectroscopy #Particle beams #Target tracking #Particle beam measurements #Physics #Scanning electron microscopy #Particle measurements #Polymers #Solid state circuits