Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials
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Temperature dependences of fibre-optical sensors of mechanical values
Tập 1 - Trang 3 pp. - 2002
In the work the temperature dependences of the fibre-optical sensor of mechanical values are explored. The examinations of influence of temperature changes on the transmitting characteristic of FOS were spend. As a sensing device the silicon membrane with width h1=40 micron with strong centre by width h3=200 micron was used. The measuring were spend at temperatures T1=20/spl deg/C, T2=60/spl deg/C......
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
Experimental research of silicon flowmeters based on piezoresistance effect
Tập 1 - Trang 3 pp. - 2002
The experimental results are presented for silicon flowmeter in a range of gas range 20 - 1000 1/h.
#Silicon #Piezoresistance #Piezoresistive devices #Bridge circuits #Pollution measurement #Resistors #Temperature dependence #Temperature distribution #Semiconductor device measurement #Heating
The model of the thermoisolated area of the thermoresistive transducer
Tập 1 - Trang 3 pp. - 2002
The physics processes that take place in the multifunctional thermoresistive transducer were considered. For presented processes it was proposed to synthesize the structures based on principles of the quasianalog modeling and to use these structures for the theoretical model for the determination of the deformations in the base sensitive element of the transducer, solution the equation of the stab......
#Thermoresistivity #Transducers #Micromechanical devices #Temperature sensors #Thermal stability #Dielectric substrates #Resistors #Heating #Physics #Humans
The 3D-model of anisotropic conductivity in the strained n-silicon
Tập 1 - Trang 3 pp. - 2002
In paper the outcomes of 3-dimensional simulation of an anisotropic electrical conductivity originating at deformation of n-silicon are reduced. Is shown, that the application of the space 19-dot template of digitization allows to take into account changes x-, y-, and z-components of field strength in all three space directions. As an example the dependences of an output voltage transversal sensor......
#Anisotropic magnetoresistance #Conductivity #Tensile stress #Laplace equations #Silicon #Tellurium #Voltage #Mechanical sensors #Couplings #Effective mass
Visible photoluminescence from Si nanocrystals fabricated in SiO/sub 2/ films after annealing under hydrostatic pressure
Tập 1 - Trang 3 pp. - 2002
The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO/sub 2/ films has been studied. For the films implanted with Si/sup +/ ions to total doze of 4.8 /spl middot/ 10/sup 16/ cm/sup -2/ a high temperature annealing (T/sub a/=1 000/spl deg/C) under high hydrostatic pressure (12 Kbar) causes a "blue" shift and increase intensity of the photoluminescen......
#Photoluminescence #Nanocrystals #Semiconductor films #Annealing #Silicon #Argon #Physics #Temperature distribution #High definition video #Optical pulses
Magnetotransport properties of two-dimensional electron gas on cylindrical surface
Tập 1 - Trang 3 pp. - 2002
The present work examines the transport properties of a 2D electron gas on a cylindrical surface placed into an external magnetic field. The test structures were obtained by directional rolling of a strained heterofilm. On these structures, magnetotransport measurements in quantizing magnetic fields at helium temperatures were performed. Differences in the field-intensity dependences of the magnet......
#Magnetic properties #Electrons #Substrates #Magnetic fields #Molecular beam epitaxial growth #Gallium arsenide #Surface resistance #Magnetic semiconductors #Physics #Testing
Determination of the transport parameters in two-dimensional semiconductor systems and thin films by contactless microwave methods
Tập 1 - Trang 75-76 - 2002
The results of theoretical and experimental study of Shubnikov-de Haas effect and cyclotron resonance by microwave methods (/spl omega//2/spl pi/=37.8GHz) in AlGaAs/GaAs heterostructures are presented. The theoretical expressions for the determination of the carrier concentration and mobility are obtained. With these data, the transport parameters in two-dimensional systems and thin films can be d......
#Semiconductor thin films #Gallium arsenide #Microwave theory and techniques #Cyclotrons #Magnetic resonance #Power measurement #Electron optics #Optical films #Optical superlattices #Reflectivity
2002 Siberian Russian Workshop on Electron Devices and Materials Proceedings (Cat. No.02EX518)
Tập 1 - Trang i - 2002
Presents the front cover of the proceedings record.
Index of authors
Tập 2 - Trang 105-105 - 2002
Presents an index of the authors whose papers are published in the conference.
Micromechanical thermal converter of power alternating current
Tập 1 - Trang 3 pp. - 2002
The microconverter construction and its fabrication process route designed. The approaching technological materials are selected. The heat fluxes and electrical performances simulations of the device are worked out. All fabrication operations, according to a process route are developed. Experimental samples are explored and results compared with a performance of secondary etalon. On the basis of o......
#Micromechanical devices #Thermoelectricity #Resistance heating #Voltage #Thermal resistance #Thermal conductivity #Electric variables measurement #Wire #Manufacturing processes #Mechanical sensors