Temperature dependences of fibre-optical sensors of mechanical values Tập 1 - Trang 3 pp. - 2002
A.D. Bialik, I.A. Voronin, A.M. Zlobin
In the work the temperature dependences of the fibre-optical sensor of
mechanical values are explored. The examinations of influence of temperature
changes on the transmitting characteristic of FOS were spend. As a sensing
device the silicon membrane with width h1=40 micron with strong centre by width
h3=200 micron was used. The measuring were spend at temperatures T1=20/spl
deg/C, T2=60/spl deg/C... hiện toàn bộ
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
Index of authors Tập 2 - Trang 105-105 - 2002
Presents an index of the authors whose papers are published in the conference.
Peculiarities of 3D nanoisland formation on vicinal surfaces during MBE process (simulation) Tập 1 - Trang 3 pp. - 2002
D.V. Brunev, A.N. Karpov, T.Yu. Sisenko, N.L. Shwartz, Z.S. Yanovitskaja
Using Monte Carlo simulation atomic interlayer diffusion influence on the
morphology of vicinal surfaces during MBE was investigated. Mechanism of 3D
island formation on the surfaces with steps and echelons of steps was suggested.
It was revealed, that for heterosystems with predominating atomic transport from
island edge to the upper layers, 3D islands are formed on vicinal surfaces with
very nar... hiện toàn bộ
#Surface morphology #Atomic layer deposition #Lattices #Capacitive sensors #Substrates #Atomic measurements #Stress #Gold #Temperature #Physics
Mathematical model of predicting and managing radio transmitting devices manufacturing risk Tập 1 - Trang 2 pp. - 2002
Y.M. Likhanov, D.Yu. Likhanov, D.S. Vilmitski
The mathematical probability-based model of predicting and managing radio
transmitting devices manufacturing risk is described.
#Mathematical model #Radio spectrum management #Risk management #Virtual manufacturing #Cutoff frequency #Circuits #Consumer electronics #Risk analysis #Impedance matching #Workability
Cấu trúc và hiện thực hóa mạch của cảm biến áp suất-nhiệt độ kết hợp dựa trên hiệu ứng piezoresistive cắt Dịch bởi AI Tập 1 - Trang 5 pp. - 2002
A.V. Limorev, A.V. Gridchin
Bài báo này phát triển và trình bày về cấu trúc và hiện thực hóa mạch của cảm
biến áp suất-nhiệt độ kết hợp dựa trên hiệu ứng piezoresistive cắt (SPE). Cảm
biến silicon bốn cực (FTT) được sử dụng làm yếu tố nhạy cảm chính. Cấu trúc của
cảm biến cho phép đo đạt yêu cầu huyết áp, nhiệt độ cơ thể và nhịp tim. Mạch của
cảm biến này cho phép đo các thông số này với độ chính xác tốt. Đầu ra kỹ thuật
số ... hiện toàn bộ
#Temperature sensors #Piezoresistance #Silicon #Bridge circuits #Stress #Water heating #Pulse measurements #Sensor phenomena and characterization #Topology #Surface resistance
Calculation of z/sub 12/ resistance for the FTSP transducer as an element of external electrical circuit Tập 1 - Trang 5 pp. - 2002
A.V. Gridchin
The analytical equation for calculation of z/sub 12/ resistance of the
four-terminal silicon pressure piezotransducer (FTSP transducer) is presented in
this paper. The main stages of this calculation in accordance with this equation
are described in details. The elastic element (EE) with silicon crystal planes
(100) and [110], p- and n-types of conductivity, and various ratios of length to
width a... hiện toàn bộ
#Electric resistance #Transducers #Tensile stress #Silicon #Conductivity #Nonlinear equations #Piezoresistance #Capacitive sensors #Doping
Characterization of etched tracks and nanotubules by ion transmission spectrometry Tập 1 - Trang 4 pp. - 2002
N. Stolterfoht, D. Fink, A. Petrov, M. Muller, J. Vacik, J. Cervena, V. Hnatowicz, L.T. Chadderton, A.S. Berdinsky
Etched tracks have recently come into the focus of renewed interest, as it has
turned out that they have a great future application potential. Therefore it is
worthwhile to review the techniques for ion track characterization. Especially,
ion transmission spectrometry (ITS) has recently emerged as a new tool for the
rapid characterization of both the average diameter and the shape of etched
tracks... hiện toàn bộ
#Etching #Spectroscopy #Particle beams #Target tracking #Particle beam measurements #Physics #Scanning electron microscopy #Particle measurements #Polymers #Solid state circuits
Micromechanical thermal converter of power alternating current Tập 1 - Trang 3 pp. - 2002
E.N. Pyatishev, A.V. Odintsov
The microconverter construction and its fabrication process route designed. The
approaching technological materials are selected. The heat fluxes and electrical
performances simulations of the device are worked out. All fabrication
operations, according to a process route are developed. Experimental samples are
explored and results compared with a performance of secondary etalon. On the
basis of o... hiện toàn bộ
#Micromechanical devices #Thermoelectricity #Resistance heating #Voltage #Thermal resistance #Thermal conductivity #Electric variables measurement #Wire #Manufacturing processes #Mechanical sensors
Simulation of initial stages of Ge nano-island nucleation on Si (111) surface Tập 1 - Trang 3 pp. - 2002
I.A. Reizvikh, A.V. Zverev, S.A. Teys, Z.Sh. Yanovitskaya
Reasons of three-layer Ge island nucleation on Si(111) surfaces at low
deposition rate at the initial stages of wetting layer formation were
investigated. Simulation of Ge epitaxial growth on atomically clean and flat
Si(111) surface was carried out by 3D Monte Carlo model. If the activation
energy of heterodiffusion of adsorbate along the substrate is less than
homodiffusion energies of the adsor... hiện toàn bộ
#Atomic layer deposition #Surface morphology #Surface cleaning #Nonhomogeneous media #Surface reconstruction #Epitaxial growth #Monte Carlo methods #Temperature #Energy barrier #Physics
Prospects of SOI technology evolution Tập 1 - Trang 5 pp. - 2002
A.A. Velichko
Today in Russia there are good prospects for creating The SOI Program on
producing custom integrated chips on SOI structures basis, which provide
complete dialectical isolation of IC elements. SOF and SI-SOPS structures should
become the basis for The SOI Program realization. The quality of silicon layers
of SOF and SI-SOPS structures makes possible in producing high-quality chips on
their basis b... hiện toàn bộ
#Isolation technology #CMOS technology #Insulation #P-n junctions #Costs #Manufacturing #Silicon #Dielectric substrates #Consumer electronics #Electronics industry