Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials
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Temperature dependences of fibre-optical sensors of mechanical values
Tập 1 - Trang 3 pp. - 2002
In the work the temperature dependences of the fibre-optical sensor of
mechanical values are explored. The examinations of influence of temperature
changes on the transmitting characteristic of FOS were spend. As a sensing
device the silicon membrane with width h1=40 micron with strong centre by width
h3=200 micron was used. The measuring were spend at temperatures T1=20/spl
deg/C, T2=60/spl deg/C...
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
Index of authors
Tập 2 - Trang 105-105 - 2002
Presents an index of the authors whose papers are published in the conference.
Micromechanical thermal converter of power alternating current
Tập 1 - Trang 3 pp. - 2002
The microconverter construction and its fabrication process route designed. The
approaching technological materials are selected. The heat fluxes and electrical
performances simulations of the device are worked out. All fabrication
operations, according to a process route are developed. Experimental samples are
explored and results compared with a performance of secondary etalon. On the
basis of o...
#Micromechanical devices #Thermoelectricity #Resistance heating #Voltage #Thermal resistance #Thermal conductivity #Electric variables measurement #Wire #Manufacturing processes #Mechanical sensors
The linear piezoresistance effect in p-Ge/sub x/Si/sub 1-x/ alloys
Tập 1 - Trang 3 pp. - 2002
Based un three-band spectrum model taking into account main scattering
mechanisms the concentration dependencies of linear piezoresistance coefficients
in p-Ge/sub x/Si/sub 1-x/ alloys were calculated. It is shown that the
piezoresistance dependence upon the alloy composition X has a non-monotonous
character.
#Piezoresistance #Silicon alloys #Impurities #Temperature dependence #Optical scattering #Capacitive sensors #Germanium alloys #Acoustic scattering #Fluctuations #Stress
The 3D-model of anisotropic conductivity in the strained n-silicon
Tập 1 - Trang 3 pp. - 2002
In paper the outcomes of 3-dimensional simulation of an anisotropic electrical
conductivity originating at deformation of n-silicon are reduced. Is shown, that
the application of the space 19-dot template of digitization allows to take into
account changes x-, y-, and z-components of field strength in all three space
directions. As an example the dependences of an output voltage transversal
sensor...
#Anisotropic magnetoresistance #Conductivity #Tensile stress #Laplace equations #Silicon #Tellurium #Voltage #Mechanical sensors #Couplings #Effective mass
The model of the thermoisolated area of the thermoresistive transducer
Tập 1 - Trang 3 pp. - 2002
The physics processes that take place in the multifunctional thermoresistive
transducer were considered. For presented processes it was proposed to
synthesize the structures based on principles of the quasianalog modeling and to
use these structures for the theoretical model for the determination of the
deformations in the base sensitive element of the transducer, solution the
equation of the stab...
#Thermoresistivity #Transducers #Micromechanical devices #Temperature sensors #Thermal stability #Dielectric substrates #Resistors #Heating #Physics #Humans
The modeling of a radiated printed structure
Tập 1 - Trang 3 pp. - 2002
This paper reports on the simulation technique based on the high frequency
structure simulator HP HFSS 5.5 used to calculate a three-dimensional radiated
printed structure. The four elements microstrip antenna with feeding line was
proposed as such structure. During the past 25 years the microstrip antennas
were intensively developed due to their low profile, lightweight features, low
cost and sim...
#Microstrip antennas #Frequency #Antenna feeds #Costs #Manufacturing #Optical polarization #Electromagnetic wave polarization #Electromagnetic radiation #Tuning #Acceleration
Calculation of z/sub 12/ resistance for the FTSP transducer as an element of external electrical circuit
Tập 1 - Trang 5 pp. - 2002
The analytical equation for calculation of z/sub 12/ resistance of the
four-terminal silicon pressure piezotransducer (FTSP transducer) is presented in
this paper. The main stages of this calculation in accordance with this equation
are described in details. The elastic element (EE) with silicon crystal planes
(100) and [110], p- and n-types of conductivity, and various ratios of length to
width a...
#Electric resistance #Transducers #Tensile stress #Silicon #Conductivity #Nonlinear equations #Piezoresistance #Capacitive sensors #Doping
New mechanism of nanosized InAs grains formation on porous silicon surface
Tập 1 - Trang 2 pp. - 2002
Combination A/sup III/B/sup V/ direct-band semiconductor materials with silicon
is the way to create light-emitting devices on silicon basis. In present paper
was made an attempt to obtain InAs nanocrystals inside the porous silicon (PS)
channels by means of molecular-beam epitaxy (MBE). InAs grows provided in A/sup
III/B/sup V/ MBE reactor on silicon substrate with porous layer. Porous silicon
su...
#Silicon #Substrates #Electrons #Molecular beam epitaxial growth #Crystalline materials #Raman scattering #Spectroscopy #X-ray diffraction #Geometry #Physics
Nanotubule formation by heterogeneous nucleation of silver along etched nuclear tracks in polyethylene terephthalate (PET)
Tập 1 - Trang 5 pp. - 2002
Silver nanotubules of 10 /spl mu/m length and 0.2 to 0.5 /spl mu/m diameter were
formed by chemical deposition of Ag onto the inner walls of etched tracks in
polyethylene terephthalate (PET). The tubule evolution, beginning with silver
nucleation from supersaturated solution, proceeding via Ag crystallite growth,
and ending with formation of a continuous cylindrical metal film, is
characterized by...
#Silver #Etching #Insulation life #Positron emission tomography #Production #Polymers #Polyethylene #Physics #Scanning electron microscopy #Nanostructured materials