Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials
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Temperature dependences of fibre-optical sensors of mechanical values
Tập 1 - Trang 3 pp. - 2002
In the work the temperature dependences of the fibre-optical sensor of
mechanical values are explored. The examinations of influence of temperature
changes on the transmitting characteristic of FOS were spend. As a sensing
device the silicon membrane with width h1=40 micron with strong centre by width
h3=200 micron was used. The measuring were spend at temperatures T1=20/spl
deg/C, T2=60/spl deg/C...
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
Index of authors
Tập 2 - Trang 105-105 - 2002
Presents an index of the authors whose papers are published in the conference.
Visible photoluminescence from Si nanocrystals fabricated in SiO/sub 2/ films after annealing under hydrostatic pressure
Tập 1 - Trang 3 pp. - 2002
The effect of hydrostatic pressure applied at high temperature on
photoluminescence of Si-implanted SiO/sub 2/ films has been studied. For the
films implanted with Si/sup +/ ions to total doze of 4.8 /spl middot/ 10/sup 16/
cm/sup -2/ a high temperature annealing (T/sub a/=1 000/spl deg/C) under high
hydrostatic pressure (12 Kbar) causes a "blue" shift and increase intensity of
the photoluminescen...
#Photoluminescence #Nanocrystals #Semiconductor films #Annealing #Silicon #Argon #Physics #Temperature distribution #High definition video #Optical pulses
Capapitance-voltage characteristics of Al/SiO/sub 2//Si structures with embedded Si nanocrystals
Tập 1 - Trang 2 pp. - 2002
Here we present our investigations on Al/SiO/sub 2//Si structures with Si
nanocrystals embedded into the oxide layer. Nanocrystals were formed by
implantation of Si ions with following high temperature annealing in N/sub 2/
ambient. Capacitance-voltage characteristics (C-V) were measured at frequencies
varied from 1 to 145 kHz at room temperature. Maximum in capacitance
characteristics was observe...
#Nanocrystals #Capacitance-voltage characteristics #Temperature #Capacitance #Voltage #Electrons #Annealing #Frequency measurement #Tunneling #Ion implantation
2002 Siberian Russian Workshop on Electron Devices and Materials Proceedings (Cat. No.02EX518)
Tập 1 - Trang i - 2002
Presents the front cover of the proceedings record.
Influence of radiation on current-voltage characteristics of CaF/sub 2//Si heterostructures
Tập 1 - Trang 2 pp. - 2002
Structures Al/CaF/sub 2//Si has been grown by method of the molecular-beam
epitaxy (MBE) with thickness of film CaF/sub 2/ from 0.1 up to 0.5 /spl mu/m.
Current-voltage characteristic (CVC) of Al/CaF/sub 2//Si structures before and
after influence of radiation has been presented. It has been shown that the
radiation has increased a current, but has not changed the mechanism of
conductivity.
#Voltage #Molecular beam epitaxial growth #Dielectrics #Silicon #Electrical resistance measurement #Lattices #Temperature #Current measurement #Conductivity #Calcium
Nanotubule formation by heterogeneous nucleation of silver along etched nuclear tracks in polyethylene terephthalate (PET)
Tập 1 - Trang 5 pp. - 2002
Silver nanotubules of 10 /spl mu/m length and 0.2 to 0.5 /spl mu/m diameter were
formed by chemical deposition of Ag onto the inner walls of etched tracks in
polyethylene terephthalate (PET). The tubule evolution, beginning with silver
nucleation from supersaturated solution, proceeding via Ag crystallite growth,
and ending with formation of a continuous cylindrical metal film, is
characterized by...
#Silver #Etching #Insulation life #Positron emission tomography #Production #Polymers #Polyethylene #Physics #Scanning electron microscopy #Nanostructured materials
Tunneling of electrons through heterostructures with quantum rings in a magnetic field
Tập 1 - Trang 3 pp. - 2002
Tunneling current of electrons through a quantum ring placed in a barrier of
InAs/GaAs in the presence of Aaronov-Bohm magnetic flux is calculated. It is
shown that tunneling current has oscillation behavior in dependence on magnetic
flux through the quantum ring. It is considered two cases: solenoid model and
uniform magnetic field one. In the second model tunneling current of electrons
is aperio...
#Magnetic tunneling #Electrons #Magnetic fields #Solenoids #Energy states #Magnetic flux #Impurities #Magnetic resonance #Voltage #Wave functions
Design and optimization of the thermovision microscope
Tập 1 - Trang 3 pp. - 2002
Application of a receiving device on basis InAs, for a thermovision microscopy
is studied. The device designed and made in an ISP of the Siberian Branch of the
Russian Academy of Science, fundamental parameters: dimensionality 128/spl
times/128, a step 50 microns, a range of lengths of waves 2.5-3 microns. For
decrease of a background radiation from warm parts of a case of the device it is
offered...
#Design optimization #Mirrors #Semiconductor devices #Testing #Temperature distribution #Cameras #Optical microscopy #Semiconductor device measurement #Thermal expansion #Optical imaging
Experimental research of silicon flowmeters based on piezoresistance effect
Tập 1 - Trang 3 pp. - 2002
The experimental results are presented for silicon flowmeter in a range of gas
range 20 - 1000 1/h.
#Silicon #Piezoresistance #Piezoresistive devices #Bridge circuits #Pollution measurement #Resistors #Temperature dependence #Temperature distribution #Semiconductor device measurement #Heating