Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials
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Các bài báo tiêu biểu
Temperature dependences of fibre-optical sensors of mechanical values
Tập 1 - Trang 3 pp. - 2002
In the work the temperature dependences of the fibre-optical sensor of
mechanical values are explored. The examinations of influence of temperature
changes on the transmitting characteristic of FOS were spend. As a sensing
device the silicon membrane with width h1=40 micron with strong centre by width
h3=200 micron was used. The measuring were spend at temperatures T1=20/spl
deg/C, T2=60/spl deg/C...
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
Experimental research of silicon flowmeters based on piezoresistance effect
Tập 1 - Trang 3 pp. - 2002
The experimental results are presented for silicon flowmeter in a range of gas
range 20 - 1000 1/h.
#Silicon #Piezoresistance #Piezoresistive devices #Bridge circuits #Pollution measurement #Resistors #Temperature dependence #Temperature distribution #Semiconductor device measurement #Heating
The model of the thermoisolated area of the thermoresistive transducer
Tập 1 - Trang 3 pp. - 2002
The physics processes that take place in the multifunctional thermoresistive
transducer were considered. For presented processes it was proposed to
synthesize the structures based on principles of the quasianalog modeling and to
use these structures for the theoretical model for the determination of the
deformations in the base sensitive element of the transducer, solution the
equation of the stab...
#Thermoresistivity #Transducers #Micromechanical devices #Temperature sensors #Thermal stability #Dielectric substrates #Resistors #Heating #Physics #Humans
Mathematical model of predicting and managing radio transmitting devices manufacturing risk
Tập 1 - Trang 2 pp. - 2002
The mathematical probability-based model of predicting and managing radio
transmitting devices manufacturing risk is described.
#Mathematical model #Radio spectrum management #Risk management #Virtual manufacturing #Cutoff frequency #Circuits #Consumer electronics #Risk analysis #Impedance matching #Workability
Characterization of etched tracks and nanotubules by ion transmission spectrometry
Tập 1 - Trang 4 pp. - 2002
Etched tracks have recently come into the focus of renewed interest, as it has
turned out that they have a great future application potential. Therefore it is
worthwhile to review the techniques for ion track characterization. Especially,
ion transmission spectrometry (ITS) has recently emerged as a new tool for the
rapid characterization of both the average diameter and the shape of etched
tracks...
#Etching #Spectroscopy #Particle beams #Target tracking #Particle beam measurements #Physics #Scanning electron microscopy #Particle measurements #Polymers #Solid state circuits
Micromechanical thermal converter of power alternating current
Tập 1 - Trang 3 pp. - 2002
The microconverter construction and its fabrication process route designed. The
approaching technological materials are selected. The heat fluxes and electrical
performances simulations of the device are worked out. All fabrication
operations, according to a process route are developed. Experimental samples are
explored and results compared with a performance of secondary etalon. On the
basis of o...
#Micromechanical devices #Thermoelectricity #Resistance heating #Voltage #Thermal resistance #Thermal conductivity #Electric variables measurement #Wire #Manufacturing processes #Mechanical sensors
Cấu trúc và hiện thực hóa mạch của cảm biến áp suất-nhiệt độ kết hợp dựa trên hiệu ứng piezoresistive cắt Dịch bởi AI
Tập 1 - Trang 5 pp. - 2002
Bài báo này phát triển và trình bày về cấu trúc và hiện thực hóa mạch của cảm
biến áp suất-nhiệt độ kết hợp dựa trên hiệu ứng piezoresistive cắt (SPE). Cảm
biến silicon bốn cực (FTT) được sử dụng làm yếu tố nhạy cảm chính. Cấu trúc của
cảm biến cho phép đo đạt yêu cầu huyết áp, nhiệt độ cơ thể và nhịp tim. Mạch của
cảm biến này cho phép đo các thông số này với độ chính xác tốt. Đầu ra kỹ thuật
số ...
#Temperature sensors #Piezoresistance #Silicon #Bridge circuits #Stress #Water heating #Pulse measurements #Sensor phenomena and characterization #Topology #Surface resistance
The effect of external mechanical stress on the fullerite conductivity
Tập 1 - Trang 5 pp. - 2002
The possibility to use powder consisting of fullerite microcrystals as device
sensitive in external mechanical load is considered. As we suppose the change of
conductivity of fullerite microcrystal powder as function of environmental
mechanical stress is useful for creation of nanoscale devices of sensor
electronics. This new effect based on changing of intermolecular distance
between fullerene mo...
#Stress #Conductivity #Sensor phenomena and characterization #Chemical sensors #Polymers #Mechanical sensors #Silicon #Nanostructured materials #Solids #Dielectrics
Influence of radiation on current-voltage characteristics of CaF/sub 2//Si heterostructures
Tập 1 - Trang 2 pp. - 2002
Structures Al/CaF/sub 2//Si has been grown by method of the molecular-beam
epitaxy (MBE) with thickness of film CaF/sub 2/ from 0.1 up to 0.5 /spl mu/m.
Current-voltage characteristic (CVC) of Al/CaF/sub 2//Si structures before and
after influence of radiation has been presented. It has been shown that the
radiation has increased a current, but has not changed the mechanism of
conductivity.
#Voltage #Molecular beam epitaxial growth #Dielectrics #Silicon #Electrical resistance measurement #Lattices #Temperature #Current measurement #Conductivity #Calcium
New mechanism of nanosized InAs grains formation on porous silicon surface
Tập 1 - Trang 2 pp. - 2002
Combination A/sup III/B/sup V/ direct-band semiconductor materials with silicon
is the way to create light-emitting devices on silicon basis. In present paper
was made an attempt to obtain InAs nanocrystals inside the porous silicon (PS)
channels by means of molecular-beam epitaxy (MBE). InAs grows provided in A/sup
III/B/sup V/ MBE reactor on silicon substrate with porous layer. Porous silicon
su...
#Silicon #Substrates #Electrons #Molecular beam epitaxial growth #Crystalline materials #Raman scattering #Spectroscopy #X-ray diffraction #Geometry #Physics