Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials
Cơ quản chủ quản: N/A
Các bài báo tiêu biểu
Temperature dependences of fibre-optical sensors of mechanical values
Tập 1 - Trang 3 pp. - 2002
In the work the temperature dependences of the fibre-optical sensor of
mechanical values are explored. The examinations of influence of temperature
changes on the transmitting characteristic of FOS were spend. As a sensing
device the silicon membrane with width h1=40 micron with strong centre by width
h3=200 micron was used. The measuring were spend at temperatures T1=20/spl
deg/C, T2=60/spl deg/C...
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
IEEE 2002 Siberian Russian Workshop on Electron Devices and Materials Proceedings [front matter]
Tập 2 - Trang i-104 - 2002
Conference proceedings front matter may contain various advertisements, welcome
messages, committee or program information, and other miscellaneous conference
information. This may in some cases also include the cover art, table of
contents, copyright statements, title-page or half title-pages, blank pages,
venue maps or other general information relating to the conference that was part
of the ori...
Characterization of etched tracks and nanotubules by ion transmission spectrometry
Tập 1 - Trang 4 pp. - 2002
Etched tracks have recently come into the focus of renewed interest, as it has
turned out that they have a great future application potential. Therefore it is
worthwhile to review the techniques for ion track characterization. Especially,
ion transmission spectrometry (ITS) has recently emerged as a new tool for the
rapid characterization of both the average diameter and the shape of etched
tracks...
#Etching #Spectroscopy #Particle beams #Target tracking #Particle beam measurements #Physics #Scanning electron microscopy #Particle measurements #Polymers #Solid state circuits
Micromechanical thermal converter of power alternating current
Tập 1 - Trang 3 pp. - 2002
The microconverter construction and its fabrication process route designed. The
approaching technological materials are selected. The heat fluxes and electrical
performances simulations of the device are worked out. All fabrication
operations, according to a process route are developed. Experimental samples are
explored and results compared with a performance of secondary etalon. On the
basis of o...
#Micromechanical devices #Thermoelectricity #Resistance heating #Voltage #Thermal resistance #Thermal conductivity #Electric variables measurement #Wire #Manufacturing processes #Mechanical sensors
X-ray spectroscopic study of carbon produced at destruction of field cathodes from carbon nanotubes
Tập 1 - Trang 2 pp. - 2002
The opportunity for measurement of X-ray spectra with the help of carbon
nanotubes cathode was realized. The K/spl alpha/-spectra of the carbon, which
was transferred on the copper anode as a result of field emission from cathodes
containing multiwall and single-wall carbon nanotubes, was obtained. The carbon
materials were found to consist from graphite-like particles. The spectrum of
carbon mate...
#Spectroscopy #Cathodes #Carbon nanotubes #Carbon dioxide #Anodes #X-ray imaging #Copper #Electrons #Dielectric materials #Fasteners
Visible photoluminescence from Si nanocrystals fabricated in SiO/sub 2/ films after annealing under hydrostatic pressure
Tập 1 - Trang 3 pp. - 2002
The effect of hydrostatic pressure applied at high temperature on
photoluminescence of Si-implanted SiO/sub 2/ films has been studied. For the
films implanted with Si/sup +/ ions to total doze of 4.8 /spl middot/ 10/sup 16/
cm/sup -2/ a high temperature annealing (T/sub a/=1 000/spl deg/C) under high
hydrostatic pressure (12 Kbar) causes a "blue" shift and increase intensity of
the photoluminescen...
#Photoluminescence #Nanocrystals #Semiconductor films #Annealing #Silicon #Argon #Physics #Temperature distribution #High definition video #Optical pulses
Surface structure and optical properties of Ti-diffused LiNbO/sub 3/ waveguides
Tập 1 - Trang 2 pp. - 2002
The topmost surface of crystal during Ti-indiffused LiNbO/sub 3/ waveguide
preparation was studied using atomic force microscopy and high energy electron
diffraction. The formation of the flat terraces with height step /spl sim/0.24nm
as a result of high temperature annealing has been detected. The global changing
of surface morphology induced by Ti diffusing was observed. No new phase
formation o...
#Surface structures #Optical surface waves #Surface morphology #Optical waveguides #Atomic force microscopy #Atom optics #Electron optics #Surface waves #Electron microscopy #Optical diffraction
Calculation of z/sub 12/ resistance for the FTSP transducer as an element of external electrical circuit
Tập 1 - Trang 5 pp. - 2002
The analytical equation for calculation of z/sub 12/ resistance of the
four-terminal silicon pressure piezotransducer (FTSP transducer) is presented in
this paper. The main stages of this calculation in accordance with this equation
are described in details. The elastic element (EE) with silicon crystal planes
(100) and [110], p- and n-types of conductivity, and various ratios of length to
width a...
#Electric resistance #Transducers #Tensile stress #Silicon #Conductivity #Nonlinear equations #Piezoresistance #Capacitive sensors #Doping
The effect of external mechanical stress on the fullerite conductivity
Tập 1 - Trang 5 pp. - 2002
The possibility to use powder consisting of fullerite microcrystals as device
sensitive in external mechanical load is considered. As we suppose the change of
conductivity of fullerite microcrystal powder as function of environmental
mechanical stress is useful for creation of nanoscale devices of sensor
electronics. This new effect based on changing of intermolecular distance
between fullerene mo...
#Stress #Conductivity #Sensor phenomena and characterization #Chemical sensors #Polymers #Mechanical sensors #Silicon #Nanostructured materials #Solids #Dielectrics
Simulation of initial stages of Ge nano-island nucleation on Si (111) surface
Tập 1 - Trang 3 pp. - 2002
Reasons of three-layer Ge island nucleation on Si(111) surfaces at low
deposition rate at the initial stages of wetting layer formation were
investigated. Simulation of Ge epitaxial growth on atomically clean and flat
Si(111) surface was carried out by 3D Monte Carlo model. If the activation
energy of heterodiffusion of adsorbate along the substrate is less than
homodiffusion energies of the adsor...
#Atomic layer deposition #Surface morphology #Surface cleaning #Nonhomogeneous media #Surface reconstruction #Epitaxial growth #Monte Carlo methods #Temperature #Energy barrier #Physics