Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials
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Temperature dependences of fibre-optical sensors of mechanical values
Tập 1 - Trang 3 pp. - 2002
In the work the temperature dependences of the fibre-optical sensor of mechanical values are explored. The examinations of influence of temperature changes on the transmitting characteristic of FOS were spend. As a sensing device the silicon membrane with width h1=40 micron with strong centre by width h3=200 micron was used. The measuring were spend at temperatures T1=20/spl deg/C, T2=60/spl deg/C......
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
Experimental research of silicon flowmeters based on piezoresistance effect
Tập 1 - Trang 3 pp. - 2002
The experimental results are presented for silicon flowmeter in a range of gas range 20 - 1000 1/h.
#Silicon #Piezoresistance #Piezoresistive devices #Bridge circuits #Pollution measurement #Resistors #Temperature dependence #Temperature distribution #Semiconductor device measurement #Heating
Index of authors
Tập 2 - Trang 105-105 - 2002
Presents an index of the authors whose papers are published in the conference.
Autoemission properties of carbon nanotubes
Tập 1 - Trang 2 pp. - 2002
Autoemission properties of the materials containing carbon nanotubes are investigated. Unique physical and chemical properties of these materials have allowed obtaining a significant current of emitted electrons at rather low applied electric fields. Automation of process of measurement has revealed the hysteresis-like voltage-current characteristic at sawtooth display of a voltage both for pure c......
#Carbon nanotubes #Cathodes #Voltage #Carbon dioxide #Organic materials #Displays #Anodes #Chemistry #Chemicals #Electron emission
Simulation of initial stages of Ge nano-island nucleation on Si (111) surface
Tập 1 - Trang 3 pp. - 2002
Reasons of three-layer Ge island nucleation on Si(111) surfaces at low deposition rate at the initial stages of wetting layer formation were investigated. Simulation of Ge epitaxial growth on atomically clean and flat Si(111) surface was carried out by 3D Monte Carlo model. If the activation energy of heterodiffusion of adsorbate along the substrate is less than homodiffusion energies of the adsor......
#Atomic layer deposition #Surface morphology #Surface cleaning #Nonhomogeneous media #Surface reconstruction #Epitaxial growth #Monte Carlo methods #Temperature #Energy barrier #Physics
IEEE 2002 Siberian Russian Workshop on Electron Devices and Materials Proceedings [front matter]
Tập 2 - Trang i-104 - 2002
Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the ori......
Visible photoluminescence from Si nanocrystals fabricated in SiO/sub 2/ films after annealing under hydrostatic pressure
Tập 1 - Trang 3 pp. - 2002
The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO/sub 2/ films has been studied. For the films implanted with Si/sup +/ ions to total doze of 4.8 /spl middot/ 10/sup 16/ cm/sup -2/ a high temperature annealing (T/sub a/=1 000/spl deg/C) under high hydrostatic pressure (12 Kbar) causes a "blue" shift and increase intensity of the photoluminescen......
#Photoluminescence #Nanocrystals #Semiconductor films #Annealing #Silicon #Argon #Physics #Temperature distribution #High definition video #Optical pulses
New mechanism of nanosized InAs grains formation on porous silicon surface
Tập 1 - Trang 2 pp. - 2002
Combination A/sup III/B/sup V/ direct-band semiconductor materials with silicon is the way to create light-emitting devices on silicon basis. In present paper was made an attempt to obtain InAs nanocrystals inside the porous silicon (PS) channels by means of molecular-beam epitaxy (MBE). InAs grows provided in A/sup III/B/sup V/ MBE reactor on silicon substrate with porous layer. Porous silicon su......
#Silicon #Substrates #Electrons #Molecular beam epitaxial growth #Crystalline materials #Raman scattering #Spectroscopy #X-ray diffraction #Geometry #Physics
Problems of semiconductor element base for the quantum computer
Tập 1 - Trang 5 pp. - 2002
This paper reports on the trends in development of quantum computer, QC. The assumed advantage of QC in comparison with the standard computer is that the QC works not with digits but with the quantum states. Also, the advantage of QC over the DECM consists in the quantum parallelism and comes from the exponential space of states of the number of cubits. As a single cubit can be in the state of sup......
#Quantum computing #Quantum mechanics #Physics computing #Parallel processing #Computational modeling #Electrons #Mechanical factors #Differential equations #Cryptography #Tensile stress
2002 Siberian Russian Workshop on Electron Devices and Materials Proceedings (Cat. No.02EX518)
Tập 1 - Trang i - 2002
Presents the front cover of the proceedings record.