Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials

In the work the temperature dependences of the fibre-optical sensor of mechanical values are explored. The examinations of influence of temperature changes on the transmitting characteristic of FOS were spend. As a sensing device the silicon membrane with width h1=40 micron with strong centre by width h3=200 micron was used. The measuring were spend at temperatures T1=20/spl deg/C, T2=60/spl deg/C, T3=90/spl deg/C. The estimation of values of responsive, nonlinearity and hysteresis was explored.

Etched tracks have recently come into the focus of renewed interest, as it has turned out that they have a great future application potential. Therefore it is worthwhile to review the techniques for ion track characterization. Especially, ion transmission spectrometry (ITS) has recently emerged as a new tool for the rapid characterization of both the average diameter and the shape of etched tracks as presented in J. Vacik et al. (1997) and J. Vacik et al. (1999). In this paper a simple formula for the correlation between the ion transmission yield and the track diameter is derived for cylindrical tracks under the impact of both parallel and divergent probing ion beams. Increasing beam divergence leads to a slight decrease of the transmission yield for small, and to a considerable enhancement of the track transmission for larger capillaries. Direct track radius determinations by scanning electron microscopy (SEM) are compared with our ITS calculations with good result.

Here we present our investigations on Al/SiO/sub 2//Si structures with Si nanocrystals embedded into the oxide layer. Nanocrystals were formed by implantation of Si ions with following high temperature annealing in N/sub 2/ ambient. Capacitance-voltage characteristics (C-V) were measured at frequencies varied from 1 to 145 kHz at room temperature. Maximum in capacitance characteristics was observed at voltages corresponding accumulation condition at near surface area of semiconductor. Such features are usually explained by discrete level of surface states. The maximum capacitance amount and its correlation with capacitance value at accumulation conditions were found to depend on frequency.

The research of the process of plasma etching of silicon in plasma CF/sub 2/Cl/sub 2/>/O/sub 2/ is carried out with the equipment of "Plasma-600". The covering of quartz walls of the reactor with fluorine polymer results in increasing the speed of etching. The increasing of the concentration of chemically active particles (CAP) observed in experiment, testifies to decreasing the probability of destruction of CAP 10 times less as a result of one collision with the surface of the reactor covered with the fluorine polymer.

Reasons of three-layer Ge island nucleation on Si(111) surfaces at low deposition rate at the initial stages of wetting layer formation were investigated. Simulation of Ge epitaxial growth on atomically clean and flat Si(111) surface was carried out by 3D Monte Carlo model. If the activation energy of heterodiffusion of adsorbate along the substrate is less than homodiffusion energies of the adsorbate and the substrate, growth of multilayer islands is observed. However, for this process the great difference between activation energies of homo and heterodiffusion is necessary (about 1 eV). It was suggested that at the borders of the islands the reconstruction of dangling bonds takes place and dimmers are created. Atom attachment into these bonds requires surmounting of some additional energy barrier. Multilayer growth takes place at small difference in activation energies of adsorbate and substrate atoms (/spl sim/ 0.2-0.3 cV), when attachment probability to the model dimer sites is decreased.

The possibility to use powder consisting of fullerite microcrystals as device sensitive in external mechanical load is considered. As we suppose the change of conductivity of fullerite microcrystal powder as function of environmental mechanical stress is useful for creation of nanoscale devices of sensor electronics. This new effect based on changing of intermolecular distance between fullerene molecules due to action of external mechanical force, which can change the distance between fullerene molecules because of weak van-der-Waals interaction exists. The founded effect is quite linear and sensitivity of this effect to external mechanical stress more then in well-known pressure transducers based on silicon technology.

The present work examines the transport properties of a 2D electron gas on a cylindrical surface placed into an external magnetic field. The test structures were obtained by directional rolling of a strained heterofilm. On these structures, magnetotransport measurements in quantizing magnetic fields at helium temperatures were performed. Differences in the field-intensity dependences of the magnetoresistance of planar and cylindrical quantum wells are revealed and qualitatively explained.

The silicon thermoelectrical sensor measuring small heat flows has been designed. The first test party has been fabricated. Sensor test methods have been developed and carried out, topology defects have been reveal. Output characteristics of the sensor have been received.

Presents the front cover of the proceedings record.

The purpose of our work is to research of the process of AE of Si plates with orientation {100} and {110}, and also consideration of dynamics of change of the etched figure's form, dependence on their form of a concrete mask, dependence of speeds of etching on concentration etchant and its temperatures. Experimental results compared to results of modeling with the purpose of a correcting the program AE developed earlier on faculty of SD a ME.