Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials
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Temperature dependences of fibre-optical sensors of mechanical values
Tập 1 - Trang 3 pp. - 2002
In the work the temperature dependences of the fibre-optical sensor of
mechanical values are explored. The examinations of influence of temperature
changes on the transmitting characteristic of FOS were spend. As a sensing
device the silicon membrane with width h1=40 micron with strong centre by width
h3=200 micron was used. The measuring were spend at temperatures T1=20/spl
deg/C, T2=60/spl deg/C...
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
Influence of radiation on current-voltage characteristics of CaF/sub 2//Si heterostructures
Tập 1 - Trang 2 pp. - 2002
Structures Al/CaF/sub 2//Si has been grown by method of the molecular-beam
epitaxy (MBE) with thickness of film CaF/sub 2/ from 0.1 up to 0.5 /spl mu/m.
Current-voltage characteristic (CVC) of Al/CaF/sub 2//Si structures before and
after influence of radiation has been presented. It has been shown that the
radiation has increased a current, but has not changed the mechanism of
conductivity.
#Voltage #Molecular beam epitaxial growth #Dielectrics #Silicon #Electrical resistance measurement #Lattices #Temperature #Current measurement #Conductivity #Calcium
X-ray spectroscopic study of carbon produced at destruction of field cathodes from carbon nanotubes
Tập 1 - Trang 2 pp. - 2002
The opportunity for measurement of X-ray spectra with the help of carbon
nanotubes cathode was realized. The K/spl alpha/-spectra of the carbon, which
was transferred on the copper anode as a result of field emission from cathodes
containing multiwall and single-wall carbon nanotubes, was obtained. The carbon
materials were found to consist from graphite-like particles. The spectrum of
carbon mate...
#Spectroscopy #Cathodes #Carbon nanotubes #Carbon dioxide #Anodes #X-ray imaging #Copper #Electrons #Dielectric materials #Fasteners
Micromechanical calibrating leak made by methods of microtechnologies
Tập 1 - Trang 2 pp. - 2002
The helium leak construction and technological route of its fabrication are
presented. The set of devices was made and their characteristics were
investigated. There are supposed to use fabricated devices as the standard at
calibration helium detectors.
#Micromechanical devices #Helium #Manufacturing #Biomembranes #Calibration #Leak detection #Detectors #Anisotropic magnetoresistance #Research and development #Laboratories
Mathematical model of predicting and managing radio transmitting devices manufacturing risk
Tập 1 - Trang 2 pp. - 2002
The mathematical probability-based model of predicting and managing radio
transmitting devices manufacturing risk is described.
#Mathematical model #Radio spectrum management #Risk management #Virtual manufacturing #Cutoff frequency #Circuits #Consumer electronics #Risk analysis #Impedance matching #Workability
The model of the thermoisolated area of the thermoresistive transducer
Tập 1 - Trang 3 pp. - 2002
The physics processes that take place in the multifunctional thermoresistive
transducer were considered. For presented processes it was proposed to
synthesize the structures based on principles of the quasianalog modeling and to
use these structures for the theoretical model for the determination of the
deformations in the base sensitive element of the transducer, solution the
equation of the stab...
#Thermoresistivity #Transducers #Micromechanical devices #Temperature sensors #Thermal stability #Dielectric substrates #Resistors #Heating #Physics #Humans
Calculation of z/sub 12/ resistance for the FTSP transducer as an element of external electrical circuit
Tập 1 - Trang 5 pp. - 2002
The analytical equation for calculation of z/sub 12/ resistance of the
four-terminal silicon pressure piezotransducer (FTSP transducer) is presented in
this paper. The main stages of this calculation in accordance with this equation
are described in details. The elastic element (EE) with silicon crystal planes
(100) and [110], p- and n-types of conductivity, and various ratios of length to
width a...
#Electric resistance #Transducers #Tensile stress #Silicon #Conductivity #Nonlinear equations #Piezoresistance #Capacitive sensors #Doping
Index of authors
Tập 2 - Trang 105-105 - 2002
Presents an index of the authors whose papers are published in the conference.
Features of anisotropic etching of silicon
Tập 1 - Trang 2 pp. - 2002
The purpose of our work is to research of the process of AE of Si plates with
orientation {100} and {110}, and also consideration of dynamics of change of the
etched figure's form, dependence on their form of a concrete mask, dependence of
speeds of etching on concentration etchant and its temperatures. Experimental
results compared to results of modeling with the purpose of a correcting the
progr...
#Anisotropic magnetoresistance #Etching #Silicon #Spirals #Temperature dependence #Water heating #Microelectronics #Chemicals #Concrete #Laboratories
Characterization of etched tracks and nanotubules by ion transmission spectrometry
Tập 1 - Trang 4 pp. - 2002
Etched tracks have recently come into the focus of renewed interest, as it has
turned out that they have a great future application potential. Therefore it is
worthwhile to review the techniques for ion track characterization. Especially,
ion transmission spectrometry (ITS) has recently emerged as a new tool for the
rapid characterization of both the average diameter and the shape of etched
tracks...
#Etching #Spectroscopy #Particle beams #Target tracking #Particle beam measurements #Physics #Scanning electron microscopy #Particle measurements #Polymers #Solid state circuits