Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials

In the work the temperature dependences of the fibre-optical sensor of mechanical values are explored. The examinations of influence of temperature changes on the transmitting characteristic of FOS were spend. As a sensing device the silicon membrane with width h1=40 micron with strong centre by width h3=200 micron was used. The measuring were spend at temperatures T1=20/spl deg/C, T2=60/spl deg/C, T3=90/spl deg/C. The estimation of values of responsive, nonlinearity and hysteresis was explored.

Etched tracks have recently come into the focus of renewed interest, as it has turned out that they have a great future application potential. Therefore it is worthwhile to review the techniques for ion track characterization. Especially, ion transmission spectrometry (ITS) has recently emerged as a new tool for the rapid characterization of both the average diameter and the shape of etched tracks as presented in J. Vacik et al. (1997) and J. Vacik et al. (1999). In this paper a simple formula for the correlation between the ion transmission yield and the track diameter is derived for cylindrical tracks under the impact of both parallel and divergent probing ion beams. Increasing beam divergence leads to a slight decrease of the transmission yield for small, and to a considerable enhancement of the track transmission for larger capillaries. Direct track radius determinations by scanning electron microscopy (SEM) are compared with our ITS calculations with good result.

Reasons of three-layer Ge island nucleation on Si(111) surfaces at low deposition rate at the initial stages of wetting layer formation were investigated. Simulation of Ge epitaxial growth on atomically clean and flat Si(111) surface was carried out by 3D Monte Carlo model. If the activation energy of heterodiffusion of adsorbate along the substrate is less than homodiffusion energies of the adsorbate and the substrate, growth of multilayer islands is observed. However, for this process the great difference between activation energies of homo and heterodiffusion is necessary (about 1 eV). It was suggested that at the borders of the islands the reconstruction of dangling bonds takes place and dimmers are created. Atom attachment into these bonds requires surmounting of some additional energy barrier. Multilayer growth takes place at small difference in activation energies of adsorbate and substrate atoms (/spl sim/ 0.2-0.3 cV), when attachment probability to the model dimer sites is decreased.

Structures Al/CaF/sub 2//Si has been grown by method of the molecular-beam epitaxy (MBE) with thickness of film CaF/sub 2/ from 0.1 up to 0.5 /spl mu/m. Current-voltage characteristic (CVC) of Al/CaF/sub 2//Si structures before and after influence of radiation has been presented. It has been shown that the radiation has increased a current, but has not changed the mechanism of conductivity.

The present work examines the transport properties of a 2D electron gas on a cylindrical surface placed into an external magnetic field. The test structures were obtained by directional rolling of a strained heterofilm. On these structures, magnetotransport measurements in quantizing magnetic fields at helium temperatures were performed. Differences in the field-intensity dependences of the magnetoresistance of planar and cylindrical quantum wells are revealed and qualitatively explained.

Presents an index of the authors whose papers are published in the conference.

In this paper the results of investigation of the thin films of the solid electrolyte BaO(CeO/sub 2/)/sub 0.9/(Nd/sub 2/O/sub 3/)/sub 0.1/ are presented. The thin films of the solid electrolyte have been made by the thermal resistive sputtering on the silicon and alumina substrates. The Raman spectra of these thin films are studied. The analysis of these spectra shows that the structure of the obtained thin films of the solid electrolyte BaO(CeO/sub 2/)/sub 0.9/(Nd/sub 2/O/sub 3/)/sub 0.1/ are like the structure of bulk samples of this electrolyte. The high temperature dependence of conductivity of the thin films of the solid electrolyte BaO(CeO/sub 2/)/sub 0.9/(Nd/sub 2/O/sub 3/)/sub 0.1/ is investigated. In terms of this dependence the values of the activation energy for conductivity are determined.

The microconverter construction and its fabrication process route designed. The approaching technological materials are selected. The heat fluxes and electrical performances simulations of the device are worked out. All fabrication operations, according to a process route are developed. Experimental samples are explored and results compared with a performance of secondary etalon. On the basis of obtained data the indispensable changes are introduced in to the microconverter construction. The upgraded thermoelectric converter at present of time is made according to an improved process route.

In paper the outcomes of 3-dimensional simulation of an anisotropic electrical conductivity originating at deformation of n-silicon are reduced. Is shown, that the application of the space 19-dot template of digitization allows to take into account changes x-, y-, and z-components of field strength in all three space directions. As an example the dependences of an output voltage transversal sensor of a unit from monoaxial mechanical power are presented.

Today in Russia there are good prospects for creating The SOI Program on producing custom integrated chips on SOI structures basis, which provide complete dialectical isolation of IC elements. SOF and SI-SOPS structures should become the basis for The SOI Program realization. The quality of silicon layers of SOF and SI-SOPS structures makes possible in producing high-quality chips on their basis by CMOS and BCMOS technologies with very high operational speed and provides high radiating stability of IC. The economic calculations prove high profitability of using SOF and SI-SOPS structures when manufacturing integrated chips. SOF structures can become the basis for manufacturing the T-D chips.