Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials
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Temperature dependences of fibre-optical sensors of mechanical values
Tập 1 - Trang 3 pp. - 2002
In the work the temperature dependences of the fibre-optical sensor of mechanical values are explored. The examinations of influence of temperature changes on the transmitting characteristic of FOS were spend. As a sensing device the silicon membrane with width h1=40 micron with strong centre by width h3=200 micron was used. The measuring were spend at temperatures T1=20/spl deg/C, T2=60/spl deg/C...... hiện toàn bộ
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
Characterization of etched tracks and nanotubules by ion transmission spectrometry
Tập 1 - Trang 4 pp. - 2002
Etched tracks have recently come into the focus of renewed interest, as it has turned out that they have a great future application potential. Therefore it is worthwhile to review the techniques for ion track characterization. Especially, ion transmission spectrometry (ITS) has recently emerged as a new tool for the rapid characterization of both the average diameter and the shape of etched tracks...... hiện toàn bộ
#Etching #Spectroscopy #Particle beams #Target tracking #Particle beam measurements #Physics #Scanning electron microscopy #Particle measurements #Polymers #Solid state circuits
Capapitance-voltage characteristics of Al/SiO/sub 2//Si structures with embedded Si nanocrystals
Tập 1 - Trang 2 pp. - 2002
Here we present our investigations on Al/SiO/sub 2//Si structures with Si nanocrystals embedded into the oxide layer. Nanocrystals were formed by implantation of Si ions with following high temperature annealing in N/sub 2/ ambient. Capacitance-voltage characteristics (C-V) were measured at frequencies varied from 1 to 145 kHz at room temperature. Maximum in capacitance characteristics was observe...... hiện toàn bộ
#Nanocrystals #Capacitance-voltage characteristics #Temperature #Capacitance #Voltage #Electrons #Annealing #Frequency measurement #Tunneling #Ion implantation
Losing of the chemically active particles in plasma CF/sub 2/Cl/sub 2//O/sub 2/
Tập 1 - Trang 2 pp. - 2002
The research of the process of plasma etching of silicon in plasma CF/sub 2/Cl/sub 2/>/O/sub 2/ is carried out with the equipment of "Plasma-600". The covering of quartz walls of the reactor with fluorine polymer results in increasing the speed of etching. The increasing of the concentration of chemically active particles (CAP) observed in experiment, testifies to decreasing the probability of des...... hiện toàn bộ
#Chemicals #Plasma chemistry #Plasma applications #Inductors #Etching #Polymers #Silicon #Plasma temperature #Testing #Equations
Features of anisotropic etching of silicon
Tập 1 - Trang 2 pp. - 2002
The purpose of our work is to research of the process of AE of Si plates with orientation {100} and {110}, and also consideration of dynamics of change of the etched figure's form, dependence on their form of a concrete mask, dependence of speeds of etching on concentration etchant and its temperatures. Experimental results compared to results of modeling with the purpose of a correcting the progr...... hiện toàn bộ
#Anisotropic magnetoresistance #Etching #Silicon #Spirals #Temperature dependence #Water heating #Microelectronics #Chemicals #Concrete #Laboratories
Tunneling of electrons through heterostructures with quantum rings in a magnetic field
Tập 1 - Trang 3 pp. - 2002
Tunneling current of electrons through a quantum ring placed in a barrier of InAs/GaAs in the presence of Aaronov-Bohm magnetic flux is calculated. It is shown that tunneling current has oscillation behavior in dependence on magnetic flux through the quantum ring. It is considered two cases: solenoid model and uniform magnetic field one. In the second model tunneling current of electrons is aperio...... hiện toàn bộ
#Magnetic tunneling #Electrons #Magnetic fields #Solenoids #Energy states #Magnetic flux #Impurities #Magnetic resonance #Voltage #Wave functions
Calculation of z/sub 12/ resistance for the FTSP transducer as an element of external electrical circuit
Tập 1 - Trang 5 pp. - 2002
The analytical equation for calculation of z/sub 12/ resistance of the four-terminal silicon pressure piezotransducer (FTSP transducer) is presented in this paper. The main stages of this calculation in accordance with this equation are described in details. The elastic element (EE) with silicon crystal planes (100) and [110], p- and n-types of conductivity, and various ratios of length to width a...... hiện toàn bộ
#Electric resistance #Transducers #Tensile stress #Silicon #Conductivity #Nonlinear equations #Piezoresistance #Capacitive sensors #Doping
X-ray spectroscopic study of carbon produced at destruction of field cathodes from carbon nanotubes
Tập 1 - Trang 2 pp. - 2002
The opportunity for measurement of X-ray spectra with the help of carbon nanotubes cathode was realized. The K/spl alpha/-spectra of the carbon, which was transferred on the copper anode as a result of field emission from cathodes containing multiwall and single-wall carbon nanotubes, was obtained. The carbon materials were found to consist from graphite-like particles. The spectrum of carbon mate...... hiện toàn bộ
#Spectroscopy #Cathodes #Carbon nanotubes #Carbon dioxide #Anodes #X-ray imaging #Copper #Electrons #Dielectric materials #Fasteners
Prospects of SOI technology evolution
Tập 1 - Trang 5 pp. - 2002
Today in Russia there are good prospects for creating The SOI Program on producing custom integrated chips on SOI structures basis, which provide complete dialectical isolation of IC elements. SOF and SI-SOPS structures should become the basis for The SOI Program realization. The quality of silicon layers of SOF and SI-SOPS structures makes possible in producing high-quality chips on their basis b...... hiện toàn bộ
#Isolation technology #CMOS technology #Insulation #P-n junctions #Costs #Manufacturing #Silicon #Dielectric substrates #Consumer electronics #Electronics industry
Magnetotransport properties of two-dimensional electron gas on cylindrical surface
Tập 1 - Trang 3 pp. - 2002
The present work examines the transport properties of a 2D electron gas on a cylindrical surface placed into an external magnetic field. The test structures were obtained by directional rolling of a strained heterofilm. On these structures, magnetotransport measurements in quantizing magnetic fields at helium temperatures were performed. Differences in the field-intensity dependences of the magnet...... hiện toàn bộ
#Magnetic properties #Electrons #Substrates #Magnetic fields #Molecular beam epitaxial growth #Gallium arsenide #Surface resistance #Magnetic semiconductors #Physics #Testing