Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials
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Temperature dependences of fibre-optical sensors of mechanical values
Tập 1 - Trang 3 pp. - 2002
In the work the temperature dependences of the fibre-optical sensor of
mechanical values are explored. The examinations of influence of temperature
changes on the transmitting characteristic of FOS were spend. As a sensing
device the silicon membrane with width h1=40 micron with strong centre by width
h3=200 micron was used. The measuring were spend at temperatures T1=20/spl
deg/C, T2=60/spl deg/C...
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
Mathematical model of predicting and managing radio transmitting devices manufacturing risk
Tập 1 - Trang 2 pp. - 2002
The mathematical probability-based model of predicting and managing radio
transmitting devices manufacturing risk is described.
#Mathematical model #Radio spectrum management #Risk management #Virtual manufacturing #Cutoff frequency #Circuits #Consumer electronics #Risk analysis #Impedance matching #Workability
The investigation of main characteristics of membrane thermal sensors based on silicon
Tập 1 - Trang 3 pp. - 2002
The silicon thermoelectrical sensor measuring small heat flows has been
designed. The first test party has been fabricated. Sensor test methods have
been developed and carried out, topology defects have been reveal. Output
characteristics of the sensor have been received.
#Biomembranes #Sensor phenomena and characterization #Thermal sensors #Silicon #Testing #Temperature sensors #Thermal resistance #Fluid flow measurement #Voltage #Topology
The modeling of a radiated printed structure
Tập 1 - Trang 3 pp. - 2002
This paper reports on the simulation technique based on the high frequency
structure simulator HP HFSS 5.5 used to calculate a three-dimensional radiated
printed structure. The four elements microstrip antenna with feeding line was
proposed as such structure. During the past 25 years the microstrip antennas
were intensively developed due to their low profile, lightweight features, low
cost and sim...
#Microstrip antennas #Frequency #Antenna feeds #Costs #Manufacturing #Optical polarization #Electromagnetic wave polarization #Electromagnetic radiation #Tuning #Acceleration
Simulation of initial stages of Ge nano-island nucleation on Si (111) surface
Tập 1 - Trang 3 pp. - 2002
Reasons of three-layer Ge island nucleation on Si(111) surfaces at low
deposition rate at the initial stages of wetting layer formation were
investigated. Simulation of Ge epitaxial growth on atomically clean and flat
Si(111) surface was carried out by 3D Monte Carlo model. If the activation
energy of heterodiffusion of adsorbate along the substrate is less than
homodiffusion energies of the adsor...
#Atomic layer deposition #Surface morphology #Surface cleaning #Nonhomogeneous media #Surface reconstruction #Epitaxial growth #Monte Carlo methods #Temperature #Energy barrier #Physics
Tunneling of electrons through heterostructures with quantum rings in a magnetic field
Tập 1 - Trang 3 pp. - 2002
Tunneling current of electrons through a quantum ring placed in a barrier of
InAs/GaAs in the presence of Aaronov-Bohm magnetic flux is calculated. It is
shown that tunneling current has oscillation behavior in dependence on magnetic
flux through the quantum ring. It is considered two cases: solenoid model and
uniform magnetic field one. In the second model tunneling current of electrons
is aperio...
#Magnetic tunneling #Electrons #Magnetic fields #Solenoids #Energy states #Magnetic flux #Impurities #Magnetic resonance #Voltage #Wave functions
Calculation of z/sub 12/ resistance for the FTSP transducer as an element of external electrical circuit
Tập 1 - Trang 5 pp. - 2002
The analytical equation for calculation of z/sub 12/ resistance of the
four-terminal silicon pressure piezotransducer (FTSP transducer) is presented in
this paper. The main stages of this calculation in accordance with this equation
are described in details. The elastic element (EE) with silicon crystal planes
(100) and [110], p- and n-types of conductivity, and various ratios of length to
width a...
#Electric resistance #Transducers #Tensile stress #Silicon #Conductivity #Nonlinear equations #Piezoresistance #Capacitive sensors #Doping
The effect of external mechanical stress on the fullerite conductivity
Tập 1 - Trang 5 pp. - 2002
The possibility to use powder consisting of fullerite microcrystals as device
sensitive in external mechanical load is considered. As we suppose the change of
conductivity of fullerite microcrystal powder as function of environmental
mechanical stress is useful for creation of nanoscale devices of sensor
electronics. This new effect based on changing of intermolecular distance
between fullerene mo...
#Stress #Conductivity #Sensor phenomena and characterization #Chemical sensors #Polymers #Mechanical sensors #Silicon #Nanostructured materials #Solids #Dielectrics
The 3D-model of anisotropic conductivity in the strained n-silicon
Tập 1 - Trang 3 pp. - 2002
In paper the outcomes of 3-dimensional simulation of an anisotropic electrical
conductivity originating at deformation of n-silicon are reduced. Is shown, that
the application of the space 19-dot template of digitization allows to take into
account changes x-, y-, and z-components of field strength in all three space
directions. As an example the dependences of an output voltage transversal
sensor...
#Anisotropic magnetoresistance #Conductivity #Tensile stress #Laplace equations #Silicon #Tellurium #Voltage #Mechanical sensors #Couplings #Effective mass
Problems of semiconductor element base for the quantum computer
Tập 1 - Trang 5 pp. - 2002
This paper reports on the trends in development of quantum computer, QC. The
assumed advantage of QC in comparison with the standard computer is that the QC
works not with digits but with the quantum states. Also, the advantage of QC
over the DECM consists in the quantum parallelism and comes from the exponential
space of states of the number of cubits. As a single cubit can be in the state
of sup...
#Quantum computing #Quantum mechanics #Physics computing #Parallel processing #Computational modeling #Electrons #Mechanical factors #Differential equations #Cryptography #Tensile stress