Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials
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Temperature dependences of fibre-optical sensors of mechanical values
Tập 1 - Trang 3 pp. - 2002
In the work the temperature dependences of the fibre-optical sensor of
mechanical values are explored. The examinations of influence of temperature
changes on the transmitting characteristic of FOS were spend. As a sensing
device the silicon membrane with width h1=40 micron with strong centre by width
h3=200 micron was used. The measuring were spend at temperatures T1=20/spl
deg/C, T2=60/spl deg/C...
#Temperature sensors #Temperature dependence #Optical fiber sensors #Mechanical sensors #Sensor phenomena and characterization #Face detection #Silicon #Optical sensors #Diodes #Sensor systems and applications
Mathematical model of predicting and managing radio transmitting devices manufacturing risk
Tập 1 - Trang 2 pp. - 2002
The mathematical probability-based model of predicting and managing radio
transmitting devices manufacturing risk is described.
#Mathematical model #Radio spectrum management #Risk management #Virtual manufacturing #Cutoff frequency #Circuits #Consumer electronics #Risk analysis #Impedance matching #Workability
Index of authors
Tập 1 - Trang 133-133 - 2002
Presents an index of the authors whose papers are published in the conference.
Prospects of SOI technology evolution
Tập 1 - Trang 5 pp. - 2002
Today in Russia there are good prospects for creating The SOI Program on
producing custom integrated chips on SOI structures basis, which provide
complete dialectical isolation of IC elements. SOF and SI-SOPS structures should
become the basis for The SOI Program realization. The quality of silicon layers
of SOF and SI-SOPS structures makes possible in producing high-quality chips on
their basis b...
#Isolation technology #CMOS technology #Insulation #P-n junctions #Costs #Manufacturing #Silicon #Dielectric substrates #Consumer electronics #Electronics industry
Thin films of solid electrolyte BaO(CeO/sub 2/)/sub 0.9/(Nd/sub 2/O/sub 3/)/sub 0.1/
Tập 1 - Trang 3 pp. - 2002
In this paper the results of investigation of the thin films of the solid
electrolyte BaO(CeO/sub 2/)/sub 0.9/(Nd/sub 2/O/sub 3/)/sub 0.1/ are presented.
The thin films of the solid electrolyte have been made by the thermal resistive
sputtering on the silicon and alumina substrates. The Raman spectra of these
thin films are studied. The analysis of these spectra shows that the structure
of the obt...
#Transistors #Solids #Neodymium #Sputtering #Conductivity #Temperature #Hydrogen #Thin film sensors #Microelectronics #Silicon
The XXI century as the century of microsystem technologies
Tập 1 - Trang 10 pp. - 2002
This paper reports on the history of microelectromechanical devices and
microsystem technologies. In the list of mostly important advantages of the XX
century the appearance of new direction of technology have stayed almost
unnoticed. In American literature, "the MEMS is the way making things" (Maluf,
2000). The "things" can be quite various. They can perceive the information (to
make sensing) to ...
#Micromechanical devices #Microelectronics #Signal processing #Monitoring #Actuators #Intelligent sensors #Nuclear weapons #History #Mass production #Costs
Index of authors
Tập 2 - Trang 105-105 - 2002
Presents an index of the authors whose papers are published in the conference.
Visible photoluminescence from Si nanocrystals fabricated in SiO/sub 2/ films after annealing under hydrostatic pressure
Tập 1 - Trang 3 pp. - 2002
The effect of hydrostatic pressure applied at high temperature on
photoluminescence of Si-implanted SiO/sub 2/ films has been studied. For the
films implanted with Si/sup +/ ions to total doze of 4.8 /spl middot/ 10/sup 16/
cm/sup -2/ a high temperature annealing (T/sub a/=1 000/spl deg/C) under high
hydrostatic pressure (12 Kbar) causes a "blue" shift and increase intensity of
the photoluminescen...
#Photoluminescence #Nanocrystals #Semiconductor films #Annealing #Silicon #Argon #Physics #Temperature distribution #High definition video #Optical pulses
Tunneling of electrons through heterostructures with quantum rings in a magnetic field
Tập 1 - Trang 3 pp. - 2002
Tunneling current of electrons through a quantum ring placed in a barrier of
InAs/GaAs in the presence of Aaronov-Bohm magnetic flux is calculated. It is
shown that tunneling current has oscillation behavior in dependence on magnetic
flux through the quantum ring. It is considered two cases: solenoid model and
uniform magnetic field one. In the second model tunneling current of electrons
is aperio...
#Magnetic tunneling #Electrons #Magnetic fields #Solenoids #Energy states #Magnetic flux #Impurities #Magnetic resonance #Voltage #Wave functions
Index of authors
Tập 2 - Trang 105-105 - 2002
Presents an index of the authors whose papers are published in the conference.