Experimental research of silicon flowmeters based on piezoresistance effect
Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Tập 1 - Trang 3 pp. - 2002
Tóm tắt
The experimental results are presented for silicon flowmeter in a range of gas range 20 - 1000 1/h.
Từ khóa
#Silicon #Piezoresistance #Piezoresistive devices #Bridge circuits #Pollution measurement #Resistors #Temperature dependence #Temperature distribution #Semiconductor device measurement #HeatingTài liệu tham khảo
kolchuzhin, 2002, Simulation and Design of the Silicon Drag-Force-Gas Flowscnsor Based on Piezoresistive Effect, The first IEEE international conference on sensors SENSORS
gridchin, 1994, Vliyanie tcnnicheskih napryazhenij v sistcme Si-SiO2 na soprotivlenic polikremnievyh integral'nyh tenzorezistorov, Proceedings of conference APEJE-94, 44
kolchuzhin, 2001, Issledovanic haraktcristik intcgral'nogo krcmnicvogo rasxodomcra malyh potokov gaza. III Vseros, molodczhnaya nauchnaya konfer-cnciya po fizike poluprovodnikov i poluprovodnikovoj opto-i nanoclektronike Tezisy dokladov
10.1109/SREDM.2001.939137