New mechanism of nanosized InAs grains formation on porous silicon surface

Combination A/sup III/B/sup V/ direct-band semiconductor materials with silicon is the way to create light-emitting devices on silicon basis. In present paper was made an attempt to obtain InAs nanocrystals inside the porous silicon (PS) channels by means of molecular-beam epitaxy (MBE). InAs grows provided in A/sup III/B/sup V/ MBE reactor on silicon substrate with porous layer. Porous silicon substrate was formed through electrochemical etching, general porosity was /spl sim/55%, porous layer thickness 500 nm and average pore size 10-13 nm.