Bubble formation and growth during Transient Liquid Phase Bonding in Cu/SnAg system for microelectronic packaging

Journal of Materials Science: Materials in Electronics - Tập 33 - Trang 2360-2374 - 2021
El Mostafa Barik1,2, Charlotte Gillot1, Fiqiri Hodaj2
1CEA, LETI, MINATEC Campus, Université Grenoble Alpes, Grenoble, France
2Université Grenoble Alpes, CNRS, Grenoble INP, SIMAP, Grenoble, France

Tóm tắt

In this work, we study the Transient Liquid Phase Bonding (TLPB) for flip chip interconnexion using copper pillar and SnAg solder alloy technologies. Cu and SnAg bumps with a size of 90 × 90 µm2 were deposited using electroplating process with a thickness of 20 µm and 15–30 µm, respectively. Two types of Cu were deposited: with or without additives. Before the TLPB process, soldering experiments with or without pre-reflow were carried out at 250 °C in order to insure a good filling of the joint. Afterwards, isothermal holdings up to 4 h were performed in the temperature range between 250 and 350 °C under air atmosphere. Two main aspects of Cu/SnAg system are studied and analyzed: (i) the evolution of morphology, microstructure, and growth kinetics of intermetallics (IMCs) during the TLPB and especially (ii) the formation and growth of gas bubbles within the liquid solder during TLPB process. Destructive (scanning electron microscopy) and non-destructive (X-ray) characterizations are performed to analyze and understand the evolution of microstructure as well as the formation and evolution of cavities within the joint during the TLPB process. Non-destructive X-ray radiography with 5 µm resolution and 3D X-ray tomography analysis with 0.7 µm resolution were conducted for the same joint at different steps of its evolution between its initial state (just after the soldering process: about 3 min at 250 °C) and 4 h at 250 °C in order to follow “in situ” the evolution of volume defects inside the joint and especially the evolution of gas bubbles within the joints.

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Journal of Materials Science: Materials in Electronics

Tập 33

2360-2374

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