Low‐energy implantation and sputtering of TiO2 by nitrogen and argon and the electrochemical reoxidationSurface and Interface Analysis - Tập 17 Số 10 - Trang 726-736 - 1991
M. Wolff, J.W. Schultze, Hans‐Henning Strehblow
AbstractIn this paper we report the investigation of the implantation and radiation damage during sputter profiles of 30 nm TiO2 layers on Ti with 3 keV N2+. The profiles are analysed by normal and angle‐resolved XPS measurements. Supplementary electrochemical reoxidants are performed, handling the samp...... hiện toàn bộ
Quantitative depth profiling in surface analysis: A reviewSurface and Interface Analysis - Tập 2 Số 4 - Trang 148-160 - 1980
S. Hofmann
AbstractAfter a brief survey of the various non‐destructive and destructive methods used for obtaining in‐depth composition profiles, the generally applicable method of ion sputtering in combination with a surface analysis technique is discussed in more detail. The quantitative evaluation of sputtering profiles requires the conversion of a measured signal intensity...... hiện toàn bộ
Characterization of CuInSe2 thin films by XPSSurface and Interface Analysis - Tập 15 Số 7 - Trang 422-426 - 1990
Esko Niemi, Lars Stolt
AbstractThe surface composition of CuInSe2 thin films, made by co‐evaporation of the elements, has been shown to be strongly dependent on the bulk composition of the films. This is explained by the presence of a secondary phase, most likely Cu2Se, on the surface of Cu‐rich films. The fast variation of the surface concentrat...... hiện toàn bộ
X‐ray photoelectron spectroscopic chemical state quantification of mixed nickel metal, oxide and hydroxide systemsSurface and Interface Analysis - Tập 41 Số 4 - Trang 324-332 - 2009
Mark C. Biesinger, Brad P. Payne, Woon‐Ming Lau, Andrea R. Gerson, Roger St. C. Smart
AbstractQuantitative chemical state X‐ray photoelectron spectroscopic analysis of mixed nickel metal, oxide, hydroxide and oxyhydroxide systems is challenging due to the complexity of the Ni 2p peak shapes resulting from multiplet splitting, shake‐up and plasmon loss structures. Quantification of mixed nickel chemical states and the qualitative determination of low...... hiện toàn bộ
The effect of the H:C ratio on the sputtering of molecular solids by fullerenesSurface and Interface Analysis - Tập 43 Số 1-2 - Trang 116-119 - 2011
R.P. Webb, Barbara J. Garrison, John C. Vickerman
AbstractThe understanding of the process by which molecular solids are sputtered by keV clusters such as C60 is of great importance if cluster SIMS is to be routinely used to depth profile a wide range of molecular materials. Computer simulations of the impact of a C60 cluster on a molecular solid show that an impact crater...... hiện toàn bộ
XPS study of passive films formed on an iron—aluminium intermetallic compound in acid solutionSurface and Interface Analysis - Tập 21 Số 6-7 - Trang 435-441 - 1994
S. Frangini, R. Giorgi, J. Lascovich, A. Mignone
AbstractSurface films grown on the intermetallic B2‐FeAl alloy after wet‐mechanical polishing and after a wide range of anodic polarization conditions in 1N H2SO4 have been analysed by x‐ray photoelectron spectroscopy. The results clearly indicate a remarkable enrichment of aluminium within all the film...... hiện toàn bộ
Intercomparison of surface analysis of thin aluminium oxide filmsSurface and Interface Analysis - Tập 15 Số 11 - Trang 681-692 - 1990
I. Olefjord, H. J. Mathieu, Philippe Marcus
AbstractA round robin test organized by the European Federation of Corrosion (EFC) Working Party on Surface Science and the Mechanisms of Corrosion and Protection, supported by the European Community Bureau of References (BCR), and further extended under VAMAS (Versailles Project on Advanced Materials and Standards), has been performed. The aim of the test was to s...... hiện toàn bộ
Photoelectron and ion scattering spectroscopy of zeolites under reduced surface‐charge conditionsSurface and Interface Analysis - Tập 20 Số 7 - Trang 603-606 - 1993
Wolfgang Grünert, Robert Schlögl, Hellmut G. Karge
AbstractFor zeolites that exhibit ion conductivity, the surface charge in the application of surface spectroscopy (XPS, UPS, ISS) may be significantly reduced by using elevated measurement temperatures. On this basis, a measurement technique has been developed that allows the application of ISS and UPS to zeolites and the detection of differential charging effects ...... hiện toàn bộ
Electron inelastic mean free paths in several solids for 200 eV ⩽ E ⩽ 10 keVSurface and Interface Analysis - Tập 4 Số 2 - Trang 52-55 - 1982
J. C. Ashley, C. J. Tung
AbstractValues of k and p are given for predicting inelastic mean free paths for electrons with energies from 200 eV to 10 keV from the simple formula λ = kEp, based on theoretical calculations for ten elemental and compound solids. These...... hiện toàn bộ
Mean free path for inelastic scattering of 1.2 kev electrons in thin poly(methylmethacrylate) filmsSurface and Interface Analysis - Tập 2 Số 1 - Trang 5-10 - 1980
Robert Roberts, David L. Allara, C. A. Pryde, D. N. E. Buchanan, N. D. Hobbins
AbstractMean free paths for inelastic scattering (λ) of low energy electrons in poly(methylmethacrylate) (PMMA) have been determined by measuring Al Kα excited C 1s and Si 2s photoelectron signal intensities as a function of ellipsometrically determined thicknesses of PMMA overlayers on silicon substrates. The λ values obtained are 29 ± 4 Å for 1196 eV electrons an...... hiện toàn bộ