Electron inelastic mean free paths in several solids for 200 eV ⩽ E ⩽ 10 keV

Surface and Interface Analysis - Tập 4 Số 2 - Trang 52-55 - 1982
J. C. Ashley1,2, C. J. Tung3
1Enquiries regarding this work should be directed to this author.
2Health and Safety Research Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, USA
3Institute of Nuclear Science, National Tsing Hua University, Hsinchu, Taiwan 300, Republic of China

Tóm tắt

AbstractValues of k and p are given for predicting inelastic mean free paths for electrons with energies from 200 eV to 10 keV from the simple formula λ = kEp, based on theoretical calculations for ten elemental and compound solids. These results indicate that in the energy range 400 eV ⩽ E ⩽ 2000 eV, the value of p lies in the range 0.65–0.80. For Si and SiO2, presentation of the available experimental data and theoretical results illustrate the differences which exist in the values of electron mean free paths.

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Tài liệu tham khảo

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Surface and Interface Analysis

Tập 4 Số 2

52-55

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