Characterization of CuInSe2 thin films by XPS

Surface and Interface Analysis - Tập 15 Số 7 - Trang 422-426 - 1990
Esko Niemi1, Lars Stolt1
1Swedish Institute of Microelectronics, Box 1084, S-164 21 Kista, Sweden

Tóm tắt

AbstractThe surface composition of CuInSe2 thin films, made by co‐evaporation of the elements, has been shown to be strongly dependent on the bulk composition of the films. This is explained by the presence of a secondary phase, most likely Cu2Se, on the surface of Cu‐rich films. The fast variation of the surface concentration is also found for films that, according to the equilibrium pseudobinary phase diagram (Cu2SeIn2Se3), should be single‐phase chalcopyrite. An explanation, suggesting the presence of a Cu‐rich compound also on the surface of films with a composition in the single phase regions, is proposed.Surface atomic concentrations have been shown to be modified in CuInSe2 films by a 4.5 keV Ar+ sputter etch. Heating in vacuum at the film deposition temperature restores the surface atomic concentrations to an as‐deposited condition, with the exception of the selenium concentration. The missing selenium atoms are substituted by oxygen atoms still remaining in the film after sputtering and heating.

Từ khóa


Tài liệu tham khảo

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Thông tin xuất bản

Surface and Interface Analysis

Tập 15 Số 7

422-426

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