Plasma Chemistry and Plasma Processing
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Plasma etching of III–V semiconductors in BCl3 chemistries: Part II: InP and related compounds
Plasma Chemistry and Plasma Processing - Tập 17 - Trang 169-179 - 1997
BCl3/Ar and BCl3/N2 plasma chemistries were compared for patterning of InP, InAs, InSb, InGaAs, InGaAsP, and AlInAs. Under electron cyclotron resonance conditions etch rates in excess of 1 µm/min can be achieved at room temperature with low additional rf chuck power (150 W). The etch rates are similar for both chemistries, with smoother surface morphologies for BCl3/Ar. However, the surfaces are s......
Conversion of NO in NO/N2, NO/O2/N2, NO/C2H4/N2 and NO/C2H4/O2/N2 Systems by Dielectric Barrier Discharge Plasmas
Plasma Chemistry and Plasma Processing - Tập 25 - Trang 371-386 - 2005
An experimental study on the conversion of NO in the NO/N2, NO/O2/N2, NO/C2H4/N2 and NO/C2H4/O2/N2 systems has been carried out using dielectric barrier discharge (DBD) plasmas at atmospheric pressure. In the NO/N2 system, NO decomposition to N2 and O2 is the dominating reaction; NO conversion to NO2 is less significant. O2 produced from NO decomposition was detected by an on-line mass spectromete......
Comparison of Aluminium Nanostructures Created by Discharges in Various Dielectric Liquids
Plasma Chemistry and Plasma Processing - Tập 34 - Trang 1101-1114 - 2014
Synthesis of aluminium-containing nanoparticles (NPs) by electrical discharges was performed in three dielectric liquids (heptane, liquid nitrogen and water) with aluminium electrodes. The nature of the liquid plays an essential role in the synthesis yield and in the structural properties of NPs. Time-resolved optical emission spectroscopy of selected emission lines emitted during the discharge a......
Spectroscopic diagnostics of temperature-controlled trench etching of silicon
Plasma Chemistry and Plasma Processing - Tập 15 Số 2 - Trang 231-255 - 1995
Ernission from the plasma species CCl, CN, CO, N2, and Si was monitored during trench etching of silicon with a CHCl,3/ N, chemistry. The temperature of the backside of the wafer was recorded simultaneously. The emission response to experimentally induced perturbations of the plasma was found to be particularly informative. One such perturbation was a sudden change of the wafer temperature through......
Monte Carlo Simulation of Radiation Trapping in Hg–Ar Fluorescent Discharge Lamps
Plasma Chemistry and Plasma Processing - Tập 23 - Trang 371-387 - 2003
The line spectra of emitted resonance radiation from mercury and the effective decay rates of the Hg 63P1 and 61P1 levels in mercury–argon discharges are simulated by a Monte Carlo method. The hyperfine splitting, the natural isotopic composition, collisional transfer of excitation, foreign gas collisions and quenching are considered to describe in detail the 253.7 nm and 184.9 nm lines. The calcu......
The Influence of Gas–Liquid Interfacial Transport Theory on Numerical Modelling of Plasma Activation of Water
Plasma Chemistry and Plasma Processing - Tập 41 - Trang 1363-1380 - 2021
Plasma activated water has shown great promise in a number of emerging application domains; yet the interaction between non-equilibrium plasma and liquid represents a complex multiphase process that is difficult to probe experimentally, necessitating the development of accurate numerical models. In this work, a global computational model was developed to follow the concentrations of aqueous reacti......
The integral mean diffusivity for particle-gas mass transfer calculations under thermal plasma conditions
Plasma Chemistry and Plasma Processing - Tập 5 - Trang 143-161 - 1985
A new integral mean diffusivity is proposed for the calculation of the mass transfer rate around a small particle immersed in a thermal plasma gas. Analogous to the integral mean thermal conductivity widely used for the corresponding heat transfer calculations, the integral mean diffusivity greatly facilitates the use of the convenient isothermal correlation, Sh=2.0, for the gas-particle mass tran......
Deposition of π-Conjugated Polycyanate Ester Thin Films and Their Dielectric Properties
Plasma Chemistry and Plasma Processing - - 2012
Two kinds of novel π-conjugated polycyanate esters, namely the plasma-polymerized 4-methoxyphenol cyanate ester (PPMPCE) and the plasma-polymerized 4-phenylphenol cyanate ester (PPPPCE), were successfully prepared by plasma polymerization for the first time. The structure and compositions of both plasma polycyanate esters were investigated by Fourier Transform Infrared (FT-IR), X-ray Photoelectron......
Characteristics of the Decomposition of CO2 in a Dielectric Packed-Bed Plasma Reactor
Plasma Chemistry and Plasma Processing - Tập 32 - Trang 153-163 - 2011
The decomposition of CO2 in a dielectric packed-bed plasma reactor has been studied. It was found that the dielectric properties and morphology of packing dielectric pellets play important roles in the reaction due to their influence on the electron energy distribution in the plasma. The acid–base properties of the packing materials also affect the reaction through the chemisorption of CO2 on basi......
Probe measurements in thermal plasma jets
Plasma Chemistry and Plasma Processing - Tập 8 - Trang 75-90 - 1988
Measurements of composition, temperature, and velocity in atmospheric argon plasma jets are reported, using enthalpy probes. The plasma jets are generated by a commercial type plasma gun and the measurements are expected to be of particular interest for industrial applications such as plasma spraying. Emphasis has been on the central and downstream regions of the plasma flame. The entrainment of a......
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