Physica Status Solidi - Rapid Research Letters

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Inverse Opal Photonic Gel Containing Charge Stabilized Boronate Anions for Glucose Sensing at Physiological pH
Physica Status Solidi - Rapid Research Letters - Tập 13 Số 2 - 2019
Dongyoun Kim, Young Gook Koh, Wonmok Lee
A glucose‐sensing inverse opal photonic gel (IOPG) that functions at physiological pH has been demonstrated in this study. Photopolymerization of the monomer mixtures is templated by opal films. The structural colors of the optimized IOPG change from red to green upon the addition of the glucose solution at pH 7.4 due to the formation of 2:1 boronates–glucose comple...... hiện toàn bộ
Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7%
Physica Status Solidi - Rapid Research Letters - Tập 9 Số 1 - Trang 28-31 - 2015
Philip Jackson, Dimitrios Hariskos, Roland Wuerz, Oliver Kiowski, Andreas Bauer, Theresa Magorian Friedlmeier, Michael Powalla
Comparison of InGaN/GaN light emitting diodes grown on m ‐plane and a ‐plane bulk GaN substrates
Physica Status Solidi - Rapid Research Letters - Tập 2 Số 2 - Trang 89-91 - 2008
Hisashi Yamada, Kenji Iso, Makoto Saitô, Hirohiko Hirasawa, Natalie Fellows, Hisashi Masui, Kenji Fujito, James S. Speck, Steven P. DenBaars, Shuji Nakamura
AbstractInGaN/GaN‐based light emitting diodes (LEDs) grown on m ‐plane, a ‐plane and off‐axis between m ‐ and a ‐plane GaN bulk substrates were investigated. A smooth surface was obtained when a ‐plane substrate was applied; however...... hiện toàn bộ
Nitride emitters go nonpolar
Physica Status Solidi - Rapid Research Letters - Tập 1 Số 3 - 2007
Ulrich T. Schwarz, Michael Kneissl
AbstractThe Expert Opinion is written by distinguished scientists and presents their personal view on important and relevant new results of research, highlighting their significance and putting the work into perspective for a broader audience. Please send comments to hiện toàn bộ
Nanometric diamond delta doping with boron
Physica Status Solidi - Rapid Research Letters - Tập 11 Số 1 - 2017
J. E. Butler, A. L. Vikharev, А. М. Горбачев, M. A. Lobaev, A. B. Muchnikov, D. B. Radischev, V. A. Isaev, В.В. Чернов, С. А. Богданов, Mikail Drozdov, Evgeniy Valentinovich Demidov, Е. А. Суровегина, V. I. Shashkin, Albert V. Davydov, Haiyan Tan, Louisa Meshi, Alexander C. Pakpour‐Tabrizi, Marie‐Laure Hicks, Richard B. Jackman
Diamond is desired for active semiconducting device because of it high carrier mobility, high voltage breakdown resistance, and high thermal diffusivity. Exploiting diamond as a semiconductor is hampered by the lack of shallow dopants to create sufficient electronic carriers at room temperature. In this work, nanometer thick, heavily boron doped epitaxial diamond ‘delta doped’ layers have ...... hiện toàn bộ
Extremely low surface recombination in 1 Ω cm n‐type monocrystalline silicon
Physica Status Solidi - Rapid Research Letters - Tập 11 Số 1 - 2017
Ruy S. Bonilla, Christian Reichel, Martin Hermle, Peter R. Wilshaw
A key requirement in the recent development of highly efficient silicon solar cells is the outstanding passivation of their surfaces. In this work, plasma enhanced chemical vapour deposition of a triple layer dielectric consisting of amorphous silicon, silicon oxide and silicon nitride, charged extrinsically using corona, has been used to demonstrate extremely low surface recombination. As...... hiện toàn bộ
Unexpectedly High Minority‐Carrier Lifetimes Exceeding 20 ms Measured on 1.4‐Ω cm n‐Type Silicon Wafers
Physica Status Solidi - Rapid Research Letters - Tập 11 Số 11 - 2017
Boris Veith‐Wolf, Jan Schmidt
We measure very high minority‐carrier lifetimes exceeding 20 ms on 1.4‐Ω cm n‐type Czochralski silicon wafers passivated using plasma‐assisted atomic‐layer‐deposited Al2O3 on both wafer surfaces. The measured maximum effective lifetimes are surprisingly high as they significantly exceed the intrins...... hiện toàn bộ
Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
Physica Status Solidi - Rapid Research Letters - Tập 4 Số 1-2 - Trang 10-12 - 2010
G. Dingemans, R. Seguin, P. Engelhart, M. C. M. van de Sanden, W. M. M. Kessels
AbstractIn this Letter, we report that both thermal atomic layer deposition (ALD) with H2O, and plasma ALD with an O2 plasma, can be used to deposit Al2O3 for a high level of surface passivation of crystalline silicon (c‐Si). For 3.5 Ω cm n‐type c‐Si, plasma ALD Al2... hiện toàn bộ
Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon
Physica Status Solidi - Rapid Research Letters - Tập 10 Số 6 - Trang 443-447 - 2016
Nicholas E. Grant, В. П. Маркевич, Jack Mullins, А. R. Peaker, Fiacre Rougieux, Daniel Macdonald
By studying the minority carrier lifetime in recently manufactured commercially available n‐ and p‐type float‐zone (FZ) silicon from five leading suppliers, we observe a very large reduction in the bulk lifetime when FZ silicon is heat‐treated in the range 450–700 °C. Photoluminescence imaging of these samples at the wafer scale revealed concentric circular patterns, with higher recombinat...... hiện toàn bộ
Analogies across auxetic models based on deformation mechanism
Physica Status Solidi - Rapid Research Letters - Tập 11 Số 6 - 2017
Teik‐Cheng Lim
This paper reviews 2D auxetic models, including 3D deformation models with 2D auxetic behavior, from mechanism perspective instead of geometrical perspective. On this basis, auxetic models across different geometrical groups can be regrouped into clusters that exhibit analogy in deformation mechanism. Factors that are taken into consideration include the identificat...... hiện toàn bộ
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