J. E. Butler1,2, A. L. Vikharev1, А. М. Горбачев1, M. A. Lobaev1, A. B. Muchnikov1, D. B. Radischev1, V. A. Isaev1, В.В. Чернов1, С. А. Богданов1, Mikail Drozdov3, Evgeniy Valentinovich Demidov3, Е. А. Суровегина3, V. I. Shashkin3, Albert V. Davydov4, Haiyan Tan4, Louisa Meshi5,4, Alexander C. Pakpour‐Tabrizi6, Marie‐Laure Hicks6, Richard B. Jackman6
1Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, Russia
2St. Petersburg Electrotechnical University LETI, St. Petersburg, Russia
3Institute for Physics of Microstructures of the Russian Academy of Sciences, Nizhny Novgorod, Russia
4National Institute of Standards and Technology, Materials Science and Engineering Division, Gaithersburg, MD, USA
5Ben Gurion University, Department of Materials Engineering, Beersheba, Israel
6London Centre for Nanotechnology and the Department of Electronic and Electrical Engineering, University College London, London, UK
Tóm tắt
Diamond is desired for active semiconducting device because of it high carrier mobility, high voltage breakdown resistance, and high thermal diffusivity. Exploiting diamond as a semiconductor is hampered by the lack of shallow dopants to create sufficient electronic carriers at room temperature. In this work, nanometer thick, heavily boron doped epitaxial diamond ‘delta doped’ layers have been grown on ultra smooth diamond surfaces which demonstrate p type conduction with enhanced Hall mobilities of up to 120 cm2/Vs and sheet carrier concentrations to 6 × 1013 cm–2, thus enabling a new class of active diamond electronic devices. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
