Physica Status Solidi - Rapid Research Letters
SCIE-ISI SCOPUS (2007-2025)
1862-6254
1862-6270
Đức
Cơ quản chủ quản: Wiley-VCH Verlag , WILEY-V C H VERLAG GMBH
Lĩnh vực:
Materials Science (miscellaneous)Condensed Matter Physics
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Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7%
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Electronic structure, chemical bonding and elastic properties of the first thorium‐containing nitride perovskite TaThN3
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AbstractThe full‐potential linearized augmented plane wave method with the
generalized gradient approximation for the exchange and correlation potential
(LAPW‐GGA) is used to understand the electronic and elastic properties of the
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Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
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AbstractIn this Letter, we report that both thermal atomic layer deposition
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for a high level of surface passivation of crystalline silicon (c‐Si). For 3.5 Ω
cm n‐type c‐Si, plasma ALD Al2O3 resulted in ultralow surface recombination
velocities of Seff < 0.8 cm/s. Thermal ALD Al2O3 also showed an excellent
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Impact of surface recombination on efficiency of III‐nitride light‐emitting diodes
Tập 10 Số 6 - Trang 480-484 - 2016
The paper considers surface recombination at the free active region surface as
the mechanism of carrier losses which has not yet been discussed with regard to
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Nitride emitters go nonpolar
Tập 1 Số 3 - 2007
AbstractThe Expert Opinion is written by distinguished scientists and presents
their personal view on important and relevant new results of research,
highlighting their significance and putting the work into perspective for a
broader audience. Please send comments to pss.rapid@wiley‐vch.de or to the
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Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon
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By studying the minority carrier lifetime in recently manufactured commercially
available n‐ and p‐type float‐zone (FZ) silicon from five leading suppliers, we
observe a very large reduction in the bulk lifetime when FZ silicon is
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at the wafer scale revealed concentric circular patterns, with higher
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Bipolar resistive switching in amorphous titanium oxide thin film
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AbstractUsing isothermal and temperature‐dependent electrical measurements, we
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Intrinsic spin Hall effect in silicene: transition from spin Hall to normal insulator
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AbstractAn intrinsic contribution to the spin Hall effect in two‐dimensional
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Comparison of InGaN/GaN light emitting diodes grown on m ‐plane and a ‐plane bulk GaN substrates
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AbstractInGaN/GaN‐based light emitting diodes (LEDs) grown on m ‐plane, a ‐plane
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with a well thickness of 2.5 nm revealed that all the LEDs showed the peak
emission...