Analogies across auxetic models based on deformation mechanism Tập 11 Số 6 - 2017
Teik‐Cheng Lim
This paper reviews 2D auxetic models, including 3D deformation models with 2D auxetic behavior, from mechanism perspective instead of geometrical perspective. On this basis, auxetic models across different geometrical groups can be regrouped into clusters that exhibit analogy in deformation mechanism. Factors that are taken into consideration include the identificat...... hiện toàn bộ
Impact of surface recombination on efficiency of III‐nitride light‐emitting diodes Tập 10 Số 6 - Trang 480-484 - 2016
K. A. Bulashevich, S. Yu. Karpov
The paper considers surface recombination at the free active region surface as the mechanism of carrier losses which has not yet been discussed with regard to III‐nitride LEDs despite of its evident importance for AlGaInP‐based light emitters. Using advanced thin‐film and triangular volumetric chip designs reported in literature as prototypes, we have demonstrated by simulation a noticeabl...... hiện toàn bộ
Nitride emitters go nonpolar Tập 1 Số 3 - 2007
Ulrich T. Schwarz, Michael Kneissl
AbstractThe Expert Opinion is written by distinguished scientists and presents their personal view on important and relevant new results of research, highlighting their significance and putting the work into perspective for a broader audience. Please send comments to hiện toàn bộ
Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon Tập 10 Số 6 - Trang 443-447 - 2016
Nicholas E. Grant, В. П. Маркевич, Jack Mullins, А. R. Peaker, Fiacre Rougieux, Daniel Macdonald
By studying the minority carrier lifetime in recently manufactured commercially available n‐ and p‐type float‐zone (FZ) silicon from five leading suppliers, we observe a very large reduction in the bulk lifetime when FZ silicon is heat‐treated in the range 450–700 °C. Photoluminescence imaging of these samples at the wafer scale revealed concentric circular patterns, with higher recombinat...... hiện toàn bộ
Bipolar resistive switching in amorphous titanium oxide thin film Tập 4 Số 1-2 - Trang 28-30 - 2010
Hu Young Jeong, Jeong Yong Lee, Min‐Ki Ryu, Sung‐Yool Choi
AbstractUsing isothermal and temperature‐dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by plasma enhanced atomic layer deposition (PEALD) between two aluminum electrodes. We found a bipolar resistive switching (BRS) behavior only in the high temperature region (>140 K) and tw...... hiện toàn bộ
Intrinsic spin Hall effect in silicene: transition from spin Hall to normal insulator Tập 6 Số 8 - Trang 340-342 - 2012
A. Dyrdał, J. Barnaś
AbstractAn intrinsic contribution to the spin Hall effect in two‐dimensional silicene is considered theoretically within the linear response theory and Green's function formalism. When an external voltage normal to the silicene plane is applied, the spin Hall conductivity is shown to reveal a transition from the spin Hall insulator phase at low bias to the conventi...... hiện toàn bộ
Comparison of InGaN/GaN light emitting diodes grown on m ‐plane and a ‐plane bulk GaN substrates Tập 2 Số 2 - Trang 89-91 - 2008
Hisashi Yamada, Kenji Iso, Makoto Saitô, Hirohiko Hirasawa, Natalie Fellows, Hisashi Masui, Kenji Fujito, James S. Speck, Steven P. DenBaars, Shuji Nakamura
AbstractInGaN/GaN‐based light emitting diodes (LEDs) grown on m ‐plane, a ‐plane and off‐axis between m ‐ and a ‐plane GaN bulk substrates were investigated. A smooth surface was obtained when a ‐plane substrate was applied; however...... hiện toàn bộ