Hu Young Jeong1, Jeong Yong Lee1, Min‐Ki Ryu2, Sung‐Yool Choi2
1Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea
2Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Republic of Korea
Tóm tắt
AbstractUsing isothermal and temperature‐dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by plasma enhanced atomic layer deposition (PEALD) between two aluminum electrodes. We found a bipolar resistive switching (BRS) behavior only in the high temperature region (>140 K) and two activation energies (0.055 eV and 0.13 eV) for the carrier transport in the ohmic current regime. We attribute this discrepancy to the change of the bulk TiO2 Fermi energy level (Ef) induced by the reversible movement of oxygen ions in the vicinity of the Al top electrode region. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
