Impact of surface recombination on efficiency of III‐nitride light‐emitting diodes

Physica Status Solidi - Rapid Research Letters - Tập 10 Số 6 - Trang 480-484 - 2016
K. A. Bulashevich1, S. Yu. Karpov2,1
1STR Group – Soft‐Impact, Ltd. P.O. Box 83, 27 Engels av 194156 St. Petersburg Russia
2Phone: +7 812 554 4570,

Tóm tắt

The paper considers surface recombination at the free active region surface as the mechanism of carrier losses which has not yet been discussed with regard to III‐nitride LEDs despite of its evident importance for AlGaInP‐based light emitters. Using advanced thin‐film and triangular volumetric chip designs reported in literature as prototypes, we have demonstrated by simulation a noticeable impact of surface recombination on the wall‐plug efficiency of InGaN‐based LEDs. Various types of LEDs whose efficiency may be especially affected by surface recombination are discussed. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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Physica Status Solidi - Rapid Research Letters

Tập 10 Số 6

480-484

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